論文

• C. Dou, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer, Microelectronics Reliability, Vol. 32, No. 4, pp. 688-691, Apr. 2012.
• Miranda Enrique, shinichi kano, C. Dou, Kuniyuki KAKUSHIMA, J. Sune, HIROSHI IWAI. Nonlinear conductance quantization effects in CeO/SiO-based resistive switching devices, APPLIED PHYSICS LETTERS, Vol. 101, 01291, 2012.

国際会議発表 (査読なし・不明)

• C. Dou, 向井 弘樹, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Resistive switching behaviors of ReRAM having W/CeO2/Si/TiN structure, 219th ECS Meeting, 2011.

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