論文

• Takashi Ito, Ichiro Kato, Takao Nozak, Tetsuo Nakamura, Hajime Ishikawa. Plasma enhanced Thermal Nitridation of Silicon, Applied Phisics Letters, American Institute of Physics, Vol. 38, No. 5, pp. 370-372, 1981.
• Takashi Ito, Takao Nozaki, Hajime Ishikawa. Direct Thermal Nitridation of Silicon Dioxide Films in Ammonia Gas, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 127, No. 9, pp. 2053-2057, 1980.
• Takashi Ito, Hideki Arakawa, Takao Nozaki, Hajime Ishikawa. Retardation of Destructive Breakdown of SiO2 Films Annealed in Ammonia Gas, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 127, No. 10, pp. 2248-2251, 1980.
• Takashi Ito, Shinpei Hijiya, Takao Nozaki, Hideki Arakawa, Masaichi Shinoda, Yukio Fukukawa. Very Thin Silicon Nitride Films Grown by Direct Thermal Reaction with Nitrogen, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 125, No. 3, pp. 448-452, 1979.
• Takashi Ito, Shinpei Hijiya, Takao Nozaki, Hideki Arakawa, Masaichi Shinoda. Low Voltage Alterable EAROM Cells with Nitride-Barrier Avalanche Injection MIS(NAMIS), IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE Electron Devices Society, Vol. ED-26, No. 6, pp. 906-913, 1979.
• Takashi Ito, Takao Nozaki, Hideki Arakawa, Masaichi Shinoda. Thermally Grown Silicon Nitride Films for High Performance MNS Devices, Applied Phisics Letters, American Institute of Physics, Vol. 32, No. 5, pp. 330-331, 1978.

国際会議発表 (査読有り)

• Takashi Ito, Takao Nozaki, Hajime Ishikawa, Yukio Fukukawa. Thermal Nitride Gate FET Technology for VLSI Devices, ISSCC Dig. of Tech. Papers, ISSCC Dig. of Tech. Papers, pp. 73-74, 1980.
• Takashi Ito, Takao Nozaki, Hideki Arakawa, Shinpei Hijiya, Masaichi Shinoda, Yukio Fukukawa. Thermally Nitrided Silicon Films By Direct Reaction, Abs. of 150th ECS Fall Meeting, Abs. of 150th ECS Fall Meeting, p. 310, 1976.

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