@article{CTT100634535,
  author = {Toshihiro Sugii and Takashi Ito and Hajime Ishikawa},
  title = {Low-Temperature Fabrication of Silicon Nitride Films by ArF Excimer Laser lrradiation},
  journal = {Japanese Journal of Applied Physics},
  year = 1988,
}

@article{CTT100634528,
  author = {Takashi Ito and Hiroshi Horie and Tetsu Fukano and Hajime Ishikawa},
  title = {A Nitride-Isolated Molybdenum-Polysilicon Gate Electrode for MOS VLSI Circuits},
  journal = {IEE Trans Electron Devices},
  year = 1986,
}

@article{CTT100634520,
  author = {Toshihiro Sugii and Takashi Ito and Hajime Ishikawa},
  title = {Excimer Laser Enhanced  Nitridation of Silicon Substrates},
  journal = {Applied Phisics Letters},
  year = 1984,
}

@article{CTT100634522,
  author = {Ichiro Kato and Takashi Ito and Tetsuo Nakamura and Hajime Ishikawa},
  title = {Characteristics of Thermally Nitrided Silicon Dioxide Film and Plasma Enhancement},
  journal = {Journal of Electronic Materials},
  year = 1984,
}

@article{CTT100634519,
  author = {Takashi Ito and Tetsuo Nakamura and Hajime Ishikawa},
  title = {Advantages of Thermal Nitride and Nirtoxide Gate Films in VLSI Process},
  journal = {IEEE Transactions on Electron Devices},
  year = 1982,
}

@article{CTT100634517,
  author = {Shinpei Hijiya and Takashi Ito and Tetsuo Nakamura and Hajime Ishikawa and Hideki Arakawa},
  title = {A Nitride Barrier Avalanche Injection EAROM},
  journal = {IEEE Journal of Solid-State Circuits},
  year = 1982,
}

@article{CTT100634515,
  author = {Ichiro Kato and Takashi Ito and Shnichi Inoue and Tetsuo Nakamura and Hajime Ishikawa},
  title = {Ammonia Annealed SiO2 Films for Thin Gate Insulators},
  journal = {Japanese Journal of Applied Physics. Supplement},
  year = 1982,
}

@article{CTT100634518,
  author = {Takashi Ito and Tetsuo Nakamura and Hajime Ishikawa},
  title = {Effect of Thermally Nitrided SiO2 (Nirtoxide) on MOS Charactristics},
  journal = {Journal of The Electrochemical Society},
  year = 1982,
}

@article{CTT100634514,
  author = {Takashi Ito and Ichiro Kato and Takao Nozak and Tetsuo Nakamura and Hajime Ishikawa},
  title = {Plasma enhanced Thermal Nitridation of Silicon},
  journal = {Applied Phisics Letters},
  year = 1981,
}

@article{CTT100634509,
  author = {Takashi Ito and Hajime Ishikawa and Yukio Fukukawa},
  title = {Thermal Nitridation of Silicon in Advanced LSI Processing},
  journal = {Japanese Journal of Applied Physics. Supplement},
  year = 1980,
}

@article{CTT100634511,
  author = {Takashi Ito and Takao Nozaki and Hajime Ishikawa},
  title = {Direct Thermal Nitridation of Silicon Dioxide Films in Ammonia Gas},
  journal = {Journal of The Electrochemical Society},
  year = 1980,
}

@article{CTT100634512,
  author = {Takashi Ito and Hideki Arakawa and Takao Nozaki and Hajime Ishikawa},
  title = {Retardation of Destructive Breakdown of SiO2 Films Annealed in Ammonia Gas},
  journal = {Journal of The Electrochemical Society},
  year = 1980,
}

@inproceedings{CTT100634668,
  author = {Takashi Ito and Tatsuya Yamazaki and Satoru Watanabe and Yasuo Nara and Hajime Ishikawa},
  title = {Photoenhancement in Low-Temperature Silicon Epitaxy},
  booktitle = {Proc. Int. Symp. on Advanced Materials for ULSI, 1988 ECS Spring Meeting},
  year = 1998,
}

@inproceedings{CTT100634672,
  author = {Kunihiro Suzuki and Tetsu Fukano and Tatsuya Yamazaki and Shinpei Hijiya and Takashi Ito and Hajime Ishikawa},
  title = {Pseudo-HBT with Polysilicon Emitter Contact and an Ultra shallow Highly Doped Base by Photoepitaxy},
  booktitle = {Tech. Dig. of, IEDM},
  year = 1998,
}

@inproceedings{CTT100634674,
  author = {Kunihiro Suzuki and Tetsu Fukano and Hiroshi Ishiwari and Tatsuya Yamazaki and Masao Taguchi and Takashi Ito and Hajime Ishikawa},
  title = {50nm Ultra Thin Base Silicon Bipolar. Device Fabrication Based on Photo-epitaxial Growth},
  booktitle = {Digest of Symp. on VLSI Technology},
  year = 1989,
}

@inproceedings{CTT100634658,
  author = {Takashi Kato and Takashi Ito and Hajime Ishikawa},
  title = {In Situ,Carbon-Doped Aluminum Metallization for VLSI/ULSI Interconnection},
  booktitle = {Tech. Dig. of IEDM},
  year = 1988,
}

@inproceedings{CTT100634632,
  author = {Takashi Ito and Hajime Ishikawa},
  title = {Current Status of Surface Nitridation on Silicon and Silicon-Dioxide},
  booktitle = {Proc. 5th Int. Symp. on Silicon Mat. Sci, and Tech., ECS Fall Meeting},
  year = 1986,
}

@inproceedings{CTT100634630,
  author = {Takashi Ito and Hajime Ishikawa},
  title = {Thermal Nitridation Technologies for VLSI},
  booktitle = {Proc. Int. Conf. on Semicon. and Integrated Circ. Tech.},
  year = 1986,
}

@inproceedings{CTT100634625,
  author = {Tatsuya Yamazaki and Rinshi Sugino and Takashi Ito and Hajime Ishikawa},
  title = {Photo-Chemical Effects for Low Temperature Si Epitaxy},
  booktitle = {Ext. Abst. of 1986 Int. Conf. on SSDM},
  year = 1986,
}

@inproceedings{CTT100634614,
  author = {Masaru Muto and Takashi Kato and Takashi Ito and Hajime Ishikawa},
  title = {ZrSi2 for LSI Contat System},
  booktitle = {Proc. of Tech. papers on Int. Symp. on VLSI Tech. Sys. and Appli.},
  year = 1985,
}

@inproceedings{CTT100634617,
  author = {Takashi Ito and Hiroshi Horie and Tetsu Fukano and Hajime Ishikawa},
  title = {A Nitride Isolated Molybdenum-Polysilicon Gate Electrode},
  booktitle = {Dig. of Tech. Papers on 1985 Symp. on VLSI Tech.},
  year = 1985,
}

@inproceedings{CTT100634615,
  author = {Masaru Muto and Takashi Kato and Takashi Ito and Hajime Ishikawa},
  title = {Self-aligned  Silicidation of Zr and Its Comparison with Ti},
  booktitle = {Ext. Abst. of 17th Conf. on SSDM},
  year = 1985,
}

@inproceedings{CTT100634620,
  author = {Tetsu Fukano and Takashi Ito and Hajime Ishikawa},
  title = {Microwave Annealing for Low Temperature VLSI Processing},
  booktitle = {Tech. Dig. of IEDM},
  year = 1985,
}

@inproceedings{CTT100634618,
  author = {Takashi Ito and Ichiro Kato and Hajime Ishikawa},
  title = {Plasma Enhancement in Direct Nitridation of Silicon and Silicon-Dioxide},
  booktitle = {MRS Symp. Proc. 38},
  year = 1985,
}

@inproceedings{CTT100634611,
  author = {Toshihiro Sugii and Takashi Ito and Hajime Ishikawa},
  title = {Low Temperature Nitridation of Silicon by Excimer Laser lrradiation},
  booktitle = {Ext. Abst. of 16th (1984 International Conf. on SSDM},
  year = 1984,
}

@inproceedings{CTT100634613,
  author = {Tatsuya Yamazaki and Takashi Ito and Hajime Ishikawa},
  title = {Disilane Photoepitaxy for VLSI},
  booktitle = {Dig. of Tech. Papers on 1984 Symp. on VLSI Tech.},
  year = 1984,
}

@inproceedings{CTT100634612,
  author = {Tetsu Fukano and Takashi Ito and Tokushige Hisatsugu and Hajime Ishikawa},
  title = {Ultra Sharp Trench Capacitors Formed by Peripheral Etching},
  booktitle = {Ext. Abst. of 16th (1984 International Conf. on SSDM},
  year = 1984,
}

@inproceedings{CTT100634610,
  author = {Hiroshi Horie and Tetsu Fukano and Takashi Ito and Hajime Ishikawa},
  title = {Multiple Self-Alignment MOS Technology (MUSA/MOS)},
  booktitle = {Tech. Dig. of IEDM},
  year = 1984,
}

@inproceedings{CTT100634606,
  author = {Takashi Ito and Ichiro Kato and Tetsuo Nakamura and Hajime Ishikawa},
  title = {Thermal Nitride Thin Films for VLSI Circuits},
  booktitle = {Proc. of Symp. on Silicon Nitride Thin Insulating Films, ECS},
  year = 1983,
}

@inproceedings{CTT100634607,
  author = {Kiyoshi Ozawa and Takashi Ito and Hajime Ishikawa},
  title = {UV Resist Stripping for High Speed and Damage Free Process},
  booktitle = {Ext. Abst. of 15th Conf. on SSDM},
  year = 1983,
}

@inproceedings{CTT100634608,
  author = {Ichiro Kato and Takashi Ito and Tetsuo Nakamura and Hajime Ishikawa},
  title = {Plasma Nitrided Silicon Dioxide Film for VLSI Gate Dielectrics},
  booktitle = {Elec. Mat. Conf.},
  year = 1983,
}

@inproceedings{CTT100634609,
  author = {Takashi Kato and Takashi Ito and Masao Taguchi and Tetsuo Nakamura and Hajime Ishikawa},
  title = {Interfacial Oxidation of Ta205-Si Systems for High Density DRAM},
  booktitle = {Dig. of Tech. Papers on 1983 Symp. on VLSI Tech.},
  year = 1983,
}

@inproceedings{CTT100634604,
  author = {Shinpei Hijiya and Takashi Ito and Tetsuo Nakamura and Hajime Ishikawa and Hideki Arakawa},
  title = {A Nitride Barrier Avalanche Injection EAROM},
  booktitle = {ISSCC Dig. of Tech. Papers},
  year = 1982,
}

@inproceedings{CTT100634601,
  author = {Ichiro Kato and Takashi Ito and Shinichi Inoue and Tetsuo Nakamura and Hajime Ishikawa},
  title = {Ammonia Annealed SiO2. Films for Thin Gate Insulators},
  booktitle = {Ext. Abs. on 13th Conf. on SSDM},
  year = 1981,
}

@inproceedings{CTT100634603,
  author = {Takashi Ito and Tetsuo Nakamura and Hajime Ishikawa},
  title = {Thin Gate Insulators for VLSI},
  booktitle = {Dig. of Tech. Papers on 1981 Symp. on VLSI Tech.},
  year = 1981,
}

@inproceedings{CTT100634602,
  author = {Masao Taguchi and Takashi Ito and Tetsu Fukano and Tetsuo Nakamura and Hajime Ishikawa},
  title = {Thermal Nitride Capacitors for High Density RAMs},
  booktitle = {Tech. Dig. of IEDM},
  year = 1981,
}

@inproceedings{CTT100634600,
  author = {Shinpei Hijiya and Takashi Ito and Tetsuo Nakamura and Nobuo Toyokura and Hajime Ishikawa},
  title = {Electrically Alterable Read Only Memory Cell with Graded Energy Band-Gap Insulator},
  booktitle = {Tech. Dig. of IEDM},
  year = 1980,
}

@inproceedings{CTT100634599,
  author = {Takashi Ito and Hajime Ishikawa and Yukio Fukukawa},
  title = {Thermal Nitridation of Silicon in Advanced LSI Processing},
  booktitle = {Ext. Abs. on 12th Conf. on SSDM},
  year = 1980,
}

@inproceedings{CTT100634598,
  author = {Takashi Ito and Takao Nozaki and Hajime Ishikawa and Yukio Fukukawa},
  title = {Thermal Nitride Gate FET Technology for VLSI Devices},
  booktitle = {ISSCC Dig. of Tech. Papers},
  year = 1980,
}

@inproceedings{CTT100634597,
  author = {Takashi Ito and Shinpei Hijiya and Hajime Ishikawa and Masaichi Shinoda},
  title = {0V Write/Erase EAROM Cells with Directly Nitrided Silicon Nitride Films as First  Insulating Layers},
  booktitle = {Tech. Dig. of IEDM},
  year = 1977,
}