論文

• Takayuki Aoyama, Kunihiro Suzuki, Hiroko Tashiro, Yoko Toda, Tatsuya Yamazaki, Kanetake Takasaki, Takashi Ito. Effect of Fluorine on Boron Diffusion in Thin Silicon Dioxides and Oxynitride, Journal of Applied Physics, American Institute of Physics, Vol. 77, No. 1, pp. 417-419, Sept. 1994.
• Kenichi Goto, Tatsuya Yamazaki, Yasuo Nara, Tetsu Fukano, Toshihiro Sugii, Yoshihiro Arimoto, Takashi Ito. Ti Salicide Process for Sub-quarter-Micron CMOS Devices, IEICE TRANSACTIONS on Electronics, The Institute of Electronics, Information and Communication Engineers, Vol. E-77-C, No. 3, pp. 480-485, Mar. 1994.
• Takayuki Aoyama, Kunihiro Suzuki, Hiroko Tashiro, Tatsuya Yamazaki, Yoshihiro Arimoto, Takashi Ito. Boron Diffusion Through Pure Silicon Oxide and Oxynitride for Metal-Oxide-Semiconductor Devices, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 140, No. 12, pp. 3624-3627, Dec. 1993.
• Takayuki Aoyama, Tatsuya Yamazaki, Takashi Ito. Silicon Surface Cleaning Using Photoexcited Fluorine Gas Diluted with Hydrogen, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 140, No. 6, pp. 1705-1708, June 1993.
• Manabu Kojima, Atsushi Fukuroda, Tetsu Fukano, Naoshi Higaki, Tatsuya Yamazaki, Toshihiro Sugii, Yoshihiro Arimoto, Takashi Ito. High-Speed SOI Bipolar Transistors Using Bonding and Thinning Techniques, IEICE TRANSACTIONS on Electronics, The Institute of Electronics, Information and Communication Engineers, Vol. E-76-C, No. 4, pp. 572-576, Apr. 1993.
• Takayuki Aoyama, Tatsuya Yamazaki, Takashi Ito. Surface Cleaning for Si Epitaxy Using Photoexcited Fluorine Gas, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 140, No. 2, pp. 366-371, Feb. 1993.
• Norio Miyata, Tatsuya Yamazaki, Yoshihiro Arimoto, Takashi Ito. Intermittent Ultraviolet lrradiation for Silicon Selective Epitaxial Growth, Applied Phisics Letters, American Institute of Physics, Vol. 62, No. 8, pp. 588-590, Dec. 1992.
• Takayuki Aoyama, Tatsuya Yamazaki, Takashi Ito. Nonuniformities of Native Oxide on Si(001) Surfaces Formed during Wet Chemical Cleaning, Applied Phisics Letters, American Institute of Physics, Vol. 61, No. 1, pp. 102-104, July 1992.
• Toshihiro Sugii, Tatsuya Yamazaki, Yoshihiro Arimoto, Takashi Ito, Yuji Furumura, Ikuo.Namura, Hiroshi Goto, Toshiya Tahara. SiC Growth and its Application to High Speed Si-HBTs, Microelectronic Engineering, ELSEVIER, Vol. 19, pp. 335-342, 1992.
• Tatsuya Yamazaki, Takashi Ito. Photoexcited Processes for Semiconductor Low Temperature Epitaxy, FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, Fijitsu, Vol. 27, No. 4, pp. 299-316, Dec. 1991.
• Takayuki Aoyama, Tatsuya Yamazaki, Takashi Ito. Removing Native Oxide from Si (001) Surfaces using Photoexcited Fluorine Gas, Applied Phisics Letters, American Institute of Physics, Vol. 59, No. 11, pp. 2576-2578, Nov. 1991.
• Toshihiro Sugii, Tatsuya Yamazaki, Takashi Ito. Achieving High Current Gain and Low Emitter Resistance with the SiCx:F Widegap Emitter, Japanese Journal of Applied Physics, The Japan Society of Applied Phisics, Vol. 30, No. 6A, pp. L970-L972, June 1991.
• 伊藤隆司, 山崎辰也. 光励起プロセスを用いたSiの低温エピタキシー, 精密工学会誌, 精密工学会, pp. 136-144, 1991.
• Toshihiro Sugii, Tatsuya Yamazaki, Takashi Ito. Si Hetero-Bipolar Transistor with a Fluorine Doped SiC Emitter and a Thin, Highly-Doped Epitaxial Base, IEEE Transactions on Electron Devices, IEEE Electron Devices Society?, Vol. ED-37, No. 11, pp. 2331-2335, Nov. 1990.
• Tatsuya Yamazaki, Hiroshi Minakata, Takashi Ito. Continuous Growth of Low-Temperature Si Epitaxial Layer with Heavily Phosphorous and Boron Doping Using Photoepitaxy, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 137, No. 6, pp. 1981-1987, June 1990.
• Tatsuya Yamazaki, Norio Miyata, Takayuki Aoyama, Takashi Ito. Investigation of Thermal Removal of Native Oxide from Si (100) Surfaces in Hydrogen for Low-Temperature Si CVD Epitaxy, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 139, No. 4, pp. 1175-1180, Apr. 1990.
• Tatsuya Yamazaki, Satoru Watanabe, Takashi Ito. Heavy Boron Doping in Low Temperature Si Photoepitaxy, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 137, No. 1, pp. 313-318, Jan. 1990.
• Tatsuya Yamazaki, Hiroshi Minakata, Takashi Ito. Continuous Growth of Heavily Doped p+-n+ Si Epitaxial Layer Using Low-Temperature Photoepitaxy, Applied Physics Letters, American Institute of Physics, Vol. 55, No. 9, pp. 879-881, Aug. 1989.
• Satoru Watanabe, Rinshi Sugino, Tatsuya Yamazaki, Yasuo Nara, Takashi Ito. Wafer Cleaning with Photoexcited Chlorine and Thermal Treatment for High-Quality Silicon Epitaxy, Japanese Journal of Applied Physics, The Japan Society of Applied Phisics, Vol. 28, No. 10, pp. 2167-2171, Aug. 1989.
• Toshihiro Sugii, Tatsuya Yamazaki, Takashi Ito. Improved Current Gain in Bipolar Transistor with Bandgap Narrowing in Base, Electronics Letters, Institution of Engineering and Technology?, Vol. 25, No. 1, pp. 60-61, May 1989.
• Toshihiro Sugii, Tatsuya Yamazaki, Tetsu Fukano, Takashi Ito. Epitaxially Grown Base Transistor for High-Speed Operation, Electron Device Letters, IEEE, IEEE Electron Devices Society, Vol. 8, No. 11, pp. 528-530, Nov. 1987.

国際会議発表 (査読有り)

• Takashi Ito, Tatsuya Yamazaki, Satoru Watanabe, Yasuo Nara, Hajime Ishikawa. Photoenhancement in Low-Temperature Silicon Epitaxy, Proc. Int. Symp. on Advanced Materials for ULSI, 1988 ECS Spring Meeting, Proc. Int. Symp. on Advanced Materials for ULSI, 1988 ECS Spring Meeting, No. 183, p. 285, 1998.
• Kunihiro Suzuki, Tetsu Fukano, Tatsuya Yamazaki, Shinpei Hijiya, Takashi Ito, Hajime Ishikawa. Pseudo-HBT with Polysilicon Emitter Contact and an Ultra shallow Highly Doped Base by Photoepitaxy, Tech. Dig. of, IEDM, Tech. Dig. of, IEDM, pp. 811-813, 1998.
• Takayuki Aoyama, Tatsuya Yamazaki, Takashi Ito. Surface Cleaning for Silicon Epitaxy Using Photoexcited Fluorine Gas, Proc. of MRS Symposium, Proc. of MRS Symposium, 1993.
• Tatsuya Yamazaki, Kenichi Goto, Tetsu Fukano, Yasuo Nara, Toshihiro Sugii, Takashi Ito. 2l psec Switching 0.13μm-CMOS at Room Temperature Using High Performance Co Salicide Process, IEDM Dig. of Tech., IEDM Dig. of Tech., pp. 906-909, 1993.
• Takashi Ito, Rinshi Sugino, Yasuhiro Sato, Masaki Okuno, Akira Osawa, Takayuki Aoyama, Tatsuya Yamazaki, Yoshihiro Arimoto. Photo-Excited Cleaning of Silicon with Chlorine and Fluorine, MRS Symp. Proceeding, MRS Symp. Proceeding, 1992.
• Tatsuya Yamazaki, Itaru Namura, Toshihiro Sugii, Hiroshi Goto, Akinori Tahara, Takashi Ito. High Speed Si Hetero-Bipolar Transistor with a SiC Wide-gap Emitter and an Ultra-thin Heavily Doped Photoepitaxially Grown Base, Proc. IEEE 1991 Bipolar Circuits and Technology Meeting, Proc. IEEE 1991 Bipolar Circuits and Technology Meeting, pp. 71-74, 1991.
• Takashi Ito, Toshihiro Sugii, Tatsuya Yamazaki. SiC(F) Hetero-Emitter and Epitaxial Base Bipolar Transistors, 4th Int. Conf. on Amorphous and Crystalline Silicon Carbide and Other IV- IV Materials, 4th Int. Conf. on Amorphous and Crystalline Silicon Carbide and Other IV- IV Materials, 1991.
• Manabu Kojim, Atsushi Fukuroda, Tetsu Fukano, Naoshi Higaki, Tatsuya Yamazaki, Toshihiro Sugii, Yoshihiro Arimoto, Takashi Ito. High-Speed Epitaxial Base Transistors on Bonded SOI, IEEE 1991 ,Bipolar Circuits and Technology Meeting, IEEE 1991 ,Bipolar Circuits and Technology Meeting, pp. 63-66, 1991.
• Atsushi Fukuroda, Toru Miyabo, Manabu Kojima, Tetsu Fukano, Naoshi Higaki, Tatsuya Yamazaki, Toshihiro Sugii, Yoshihiro Arimoto, Takashi Ito. Wafer Bonding and Thinning for High-Speed SOI Epitaxial-Base Transistor, Ext. Abst. of Int. Conf. on SSDM, Ext. Abst. of Int. Conf. on SSDM, pp. 168-169, 1991.
• Toshihiro Sugii, Tatsuya Yamazaki, Takashi Ito. Process Technologies for Advanced Si Bipolar Devices, Ext. Abst, of Int. Conf. on SSDM, Ext. Abst, of Int. Conf. on SSDM, pp. 817-818, 1990.
• Tatsuya Yamazaki, Ikuo Namura, Hiroshi Goto, Atsushi Tahara, Takashi Ito. A 11.7 GHz l/8 Divider using 43 GHz Si High Speed Bipolar Transistor with Photo-epitaxially Grown Ultra Thin Base, Tech. Digest of IEDM, Tech. Digest of IEDM, pp. 309-312, 1990.
• Tatsuya Yamazaki, Hiroshi Minakata, Takashi Ito. Abrupt and Defect-free p+-n+ Junction Formed by Low-Temperature Photo-Epitaxy with Continuous Boron and Phosphorous Doping, Ext. Abs. of 2lst Conf. on SSDM, Ext. Abs. of 2lst Conf. on SSDM, pp. 61-62, 1989.
• Satoru Watanabe, Rinshi Sugino, Tatsuya Yamazaki, Yasuo Nara, Takashi Ito. Wafer-Cleaning with Photo-Excited Chlorine and Thermal Treatment for High-Quality Silicon Epitaxy, Dig. of 2nd MicroProcess Conf., Dig. of 2nd MicroProcess Conf., pp. 120-121, 1989.
• Toshihiro Sugii, Tatsuya Yamazaki, Kunihiro Suzuki, Tetsu Fukano, Takashi Ito. Si Hetero-Bipolar Transistor with an SiC Emitter and a Thin Epitaxial Base, Tech. Dig. of IEDM, Tech. Dig. of IEDM, pp. 659-662, 1989.
• Satoru Watanabe, Tatsuya Yamazaki, Takashi Ito. Wavelength Dependence Boron Doping in Silicon Photochemical Vapor Deposition, Proc. of SPIE, Proc. of SPIE, Vol. 119, No. 10-1, pp. 104-108, 1989.
• Kunihiro Suzuki, Tetsu Fukano, Hiroshi Ishiwari, Tatsuya Yamazaki, Masao Taguchi, Takashi Ito, Hajime Ishikawa. 50nm Ultra Thin Base Silicon Bipolar. Device Fabrication Based on Photo-epitaxial Growth, Digest of Symp. on VLSI Technology, Digest of Symp. on VLSI Technology, pp. 91-93, 1989.
• Satoru Watanabe, Tatsuya Yamazaki, Yasuo Nara, Takashi Ito. Photo- Enhanced Boron Doping in Low-Temperature Silicon Epitaxy and its FTIR Study, Ext. Abs. of 20th Conf. on SSDM, Ext. Abs. of 20th Conf. on SSDM, pp. 117-118, 1988.
• Toshihiro Sugii, Tatsuya Yamazaki, Tetsu Fukano, Takashi Ito. Thin-Base Bipolar Technology by Low-Temperature Photo-Epitaxy, Dig. of Symp. on VLSI Tech., Dig. of Symp. on VLSI Tech., pp. 35-36, 1987.
• Takashi Ito, Rinshi Sugino, Tatsuya Yamazaki, Satoru Watanabe, Yasuo Nara. Photochemical Cleaning of Silicon Wafers with Halogen Radicals, 1987 ECS Fall Meeting, 1987 ECS Fall Meeting, pp. 1076-1077, 1987.
• Rinshi Sugino, Yasuo Nara, Tatsuya Yamazaki, Satoru Watanabe, Takashi Ito. Through-Oxide Cleaning of Silicon Surface by Photo-Excited Radicals, Ext. Abs. of 19th Conf. on SSDM, Ext. Abs. of 19th Conf. on SSDM, pp. 207-208, 1987.
• Tatsuya Yamazaki, Satoru Watanabe, Toshihiro Sugii, Takashi Ito. Ultra Shallow p+ /n Junction Formed by Photo-Enhanced Low-Temperature Epitaxy, Tech. Dig. of IEDM, Tech. Dig. of IEDM, pp. 586-589, 1987.
• Tatsuya Yamazaki, Rinshi Sugino, Takashi Ito, Hajime Ishikawa. Photo-Chemical Effects for Low Temperature Si Epitaxy, Ext. Abst. of 1986 Int. Conf. on SSDM, Ext. Abst. of 1986 Int. Conf. on SSDM, pp. 213-214, 1986.
• Tatsuya Yamazaki, Takashi Ito, Hajime Ishikawa. Disilane Photoepitaxy for VLSI, Dig. of Tech. Papers on 1984 Symp. on VLSI Tech., Dig. of Tech. Papers on 1984 Symp. on VLSI Tech., pp. 56-57, 1984.

[ BibTeX 形式で保存 ]    [ 論文・著書をCSV形式で保存 ]    [ 特許をCSV形式で保存 ]