論文

• Toshihiro Sugii, Tatsuya Yamazaki, Yoshihiro Arimoto, Takashi Ito, Yuji Furumura, Ikuo.Namura, Hiroshi Goto, Toshiya Tahara. SiC Growth and its Application to High Speed Si-HBTs, Microelectronic Engineering, ELSEVIER, Vol. 19, pp. 335-342, 1992.
• Toshihiro Sugii, Takashi Ito, Yuji Furumura, Toru Doki, Fumio Mieno, Mamoru Maeda. β-SiC/Si Hetero Junction Bipolar Transistors with High Current Gain, IEEE Electron Device Letters, IEEE Electron Devices Society?, Vol. EDL-9, No. 2, pp. 87-89, Feb. 1988.
• Toshihiro Sugii, Takashi Ito, Yuji Furumura, Makoto Doki, Fumio Mieno, Mamoru Maeda. Si Heterojunction Bipolar Transistors with Single-Crystalline β-SiC Emitters, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 134, No. 10, pp. 2545-2549, Oct. 1987.

国際会議発表 (査読有り)

• Toshihiro Sugii, Takayuki Aoyama, Yuji Furumura, Takashi Ito. SiC Growth and Its Application to Si-HBTs, Proc. of American Vacuum Society Topical Symp. on Si Based Heterostructures, Proc. of American Vacuum Society Topical Symp. on Si Based Heterostructures, p. 124, 1990.
• Tetsuo Eshita, Kunihiro Suzuki, Toru Hara, Fumio Mieno, Yuji Furumura, Mamoru Maeda, Toshihiro Sugii, Takashi Ito. Low-Temperature Heteroepitaxy of β- SiC on Si(111) Substrates, Proc. MRS Symp., pp. 357-362, 1988.
• Toshihiro Sugii, Takashi Ito, Yuji Furumura, Mikio Doki, Fumio Mieno, Mamoru Maeda. Epitaxial SiC Emitter for High Speed Bipolar VLSI's, Dig. Symp. on VLSI Tech., Dig. Symp. on VLSI Tech., pp. 45-46, 1986.

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