論文

• Kenji M. Kojima, Masatoshi Hiraishi, Hirotaka Okabe, Akihiro Koda, Rryosuke Kadono, Keisuke Ide, Satoru Matsuishi, Hideya Kumomi, Toshio Kamiya, Hideo Hosono. Electronic structure of interstitial hydrogen in In-Ga-Zn-O semiconductor simulated by muon, Applied Physics Letters, 115, 122104-1-5, Sept. 2019.
• Keisuke Ide, * Kyohei Ishikawa, Haochun Tang, Takayoshi Katase, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya. Effects of Base Pressure on Growth and Optoelectronic Properties of Amorphous In‐Ga‐Zn‐O: Ultralow Optimum Oxygen Supply and Bandgap Widening, physica status solidi (a), 1700832, 1-6, Feb. 2018.
• Haochun Tang, Yosuke Kishida, Keisuke Ide, Yoshitake Toda, Hidenori Hiramatsu, Satoru Matsuishi, Shigenori Ueda, Naoki Ohashi, Hideya Kumomi, Hideo Hosono, Toshio Kamiya. Multiple Roles of Hydrogen Treatments in Amorphous In-Ga-Zn-O Films, ECS J. Sol. State Sci. Technol., 6, 365-372, May 2017.
• Keisuke Ide, Mitsuho Kikuchi, Masato Ota, Masato Sasase, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya. Effects of working pressure and annealing on bulk density and nanopore structures in amorphous In–Ga–Zn–O thin-film transistors, Jpn. J. Appl. Phys., Vol. 56, pp. 03BB03-1 - 5, Jan. 2017.
• K.Ide, M. Kikuchi, M. Sasase, H. Hiramatsu, H. Kumomi, H. Hosono, T. Kamiya. Why high-pressure sputtering must be avoided to deposit a-In-Ga-Zn-O films, ; Proc. Active-Matrix Flatpanel Displays and Devices (AMFPD2016) (2016 The 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices), Vol. 7-2/298-301, 7-2/298-301, 2017.
• Haochun Tang, Keisuke Ide, Hidenori Hiramatsu, Shigenori Ueda, Naoki Ohashi, Hideya Kumomi, Hideo Hosono, Toshio Kamiya. Effects of thermal annealing on elimination of deep defects in amorphous In–Ga–Zn–O thin-film transistors, Thin Solid Films, Vol. 614, 73-78, 2016.
• Jakub Grochowski, Yuichiro Hanyu, Katsumi Abe, Jakub Kaczmarski, Jan Dyczewski, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya. Origin of Lower Film Density and Larger Defect Density in Amorphous In-Ga-Zn-O Deposited at High Total Pressure, J. Disp. Technol., Vol. 11, pp. 523-527, 2015.
• Takatoshi Orui, Johannes Herms, Yuichiro Hanyu, Shigenori Ueda, Ken Watanabe, Isao Sakaguchi, Naoki Ohashi, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya. Charge Compensation by Excess Oxygen in Amorphous In-Ga-Zn-O Films Deposited by Pulsed Laser Deposition, J. Disp. Technol., Vol. 11, pp. 518-522, 2015.
• Hideya Kumomi, Toshio Kamiya, Hideo Hosono. Advances in Oxide Thin-Film Transistors in Recent Decade and Their Future, (in Japanse, Hakumaku Transistor Gijutsu no Subete), Vol. 67, pp. 3-8, 2015.
• Haochun Tang, Kyohei Ishikawa, Keisuke Ide, Hidenori Hiramatsu, Shigenori Ueda, Naoki Ohashi, Hideya Kumomi, Hideo Hosono, Toshio Kamiya. Effects of residual hydrogen in sputtering atmosphere on structures and properties of amorphous In-Ga-Zn-O thin films, J. Appl. Phys., Vol. 118, pp. 205703-1-6, 2015.
• Min Liao, Zewen Xiao, Fan-Yong Ran, Hideya Kumomi, Toshio Kamiya, Hideo Hosono. Effects of Pb Doping on Hole Transport Properties and Thin-Film Transistor Characteristics of SnO Thin Films, ECS J. Solid State Sci. Technol., Vol. 4, pp. Q26-Q30, 2015.
• Takaya Miyase, Ken Watanabe, Isao Sakaguchi, Naoki Ohashi, Kay Domen, Kenji Nomura, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya. Roles of Hydrogen in Amorphous Oxide Semiconductor In-Ga-Zn-O: Comparison of Conventional and Ultra-High-Vacuum Sputtering, ECS J. Solid State Sci. Technol., Vol. 3, pp. Q3085-Q3090, 2014.
• Y. Hanyu, K. Abe, K. Domen, K. Nomura, H. Hiramatsu, H. Kumomi, H. Hosono, T. Kamiya. Effects of High-Temperature Annealing on Operation Characteristics of a-In-Ga-Zn-O TFTs, J. Displ. Technol., pp. 979-983, 2014.
• Katsumi Abe, Ayumu Sato, Kenji Takahashi, Hideya Kumomi, Toshio Kamiya, Hideo Hosono. Mobility^- and temperature-dependent device model for amorphous In–Ga–Zn–O thin-film transistors, Thin Solid Films, Vol. 559, pp. 40-43, 2013.

著書

• Hideo Hosono, Hideya Kumomi. Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory, Wiley, (Edited), 2022.

国際会議発表 (査読有り)

• Toshio Kamiya, Hideya Kumomi, Hideo Hosono. Multiple Origins of Near-VBM Defects and Passivation Effects in a-In-Ga-Zn-O; Digest of The 21st International Display Workshops 2014 (IDW'14), IDW'14(Dec.3-5, Niigata, Japan), AMD2-1, 2014.

国内会議発表 (査読有り)

• 井手 啓介, 岸田 陽介, 片瀬 貴義, 平松 秀典, 上田 茂典, 雲見 日出也, 細野 秀雄, 神谷 利夫. アモルファス酸化物半導体の価電子帯直上欠陥の分離, 第78回 応用物理学会秋季学術講演会, Sept. 2017.

国内会議発表 (査読なし・不明)

• 井手 啓介, 太田 雅人, 岸田 陽介, 片瀬 貴義, 平松 秀典, 上田 茂典, 雲見 日出也, 細野 秀雄, 神谷 利夫. [講演奨励賞受賞記念講演] 全反射硬X線光電子分光法によるアモルファス酸化物半導体の価電子帯直上欠陥の深さ方向分布, 第65回応用物理学会春季学術講演会, Mar. 2018.

特許など

• 細野秀雄, 金正煥, 雲見日出也. 光電子素子、これを用いた平面ディスプレイ、及び光電子素子の製造方法. 特許. 登録. 国立大学法人東京工業大学. 2019/06/14. 特願2020-528761. 2021/09/24. 再表2020/008839. 特許第7181641号. 2022/11/22 2022.
• 細野秀雄, 金正煥, 方俊皓, 雲見日出也, 渡邉　暁, 大越　雄斗, 宮川　直通, 石橋　奈央, 増茂　邦雄, 中村　伸宏. 半導体化合物、半導体化合物の層を有する半導体素子、積層体、およびターゲット. 特許. 公開. 国立大学法人東京工業大学, AGC株式会社. 2018/10/30. 特願2019-557079. 2020/12/17. 再表2019/107046. 2020.
• 細野秀雄, 雲見日出也, 中村　伸宏　, 渡邉　暁　, 伊藤　和弘　, 宮川　直通　. 半導体素子. 特許. 公開. 国立大学法人東京工業大学, AGC株式会社. 2017/09/29. 特願2018-543876. 2019/07/18. 特開(再)2018-066483. 2019.
• 松崎功佑, 細野秀雄, 大場史康, 熊谷悠, 原田航, 雲見日出也. 窒化銅半導体およびその製造方法. 特許. 登録. 国立大学法人東京工業大学. 2017/03/06. 特願2017-041774. 2018/09/20. 特開2018-148031. 特許第6951734号. 2021/09/29 2021.
• 細野秀雄, 神谷利夫, 雲見日出也, 金正煥, 中村　伸宏, 渡邉　暁, 宮川　直通. 酸化物半導体化合物の層、酸化物半導体化合物の層を備える半導体素子、および積層体. 特許. 登録. 国立大学法人東京工業大学, AGC株式会社. 2017/02/23. 特願2018-503092. 2019/01/10. 再表2017/150351. 特許第7130209号. 2022/08/26 2022.
• 細野秀雄, 雲見日出也, 中村　伸宏　, 渡邉　暁　, 渡邉　俊成　, 宮川　直通　. 光電変換素子を製造する方法. 特許. 公開. 国立大学法人東京工業大学, AGC株式会社. 2016/11/21. 特願2017-553783. 2018/09/13. 再表2017/094547. 2018.
• 松石聡, 細野秀雄, 雲見日出也. 遍歴電子反強磁性体およびその製造法. 特許. 公開. 国立大学法人東京工業大学. 2015/02/16. 特願2015-027978. 2016/08/22. 特開2016-150861. 2016.

[ BibTeX 形式で保存 ]    [ 論文・著書をCSV形式で保存 ]    [ 特許をCSV形式で保存 ]