@article{CTT100658805,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and takeo hattori and Kenji Natori and HIROSHI IWAI},
  title = {Comparative study of electrical characteristics in(100) and (110)surface-oriented nMOSFETs with direct contact La-silicate/Si interface structure},
  journal = {Solid-State Electronics},
  year = 2013,
}

@article{CTT100658723,
  author = {DARYOUSH ZADEH and Hiroshi Oomine and Yuya Suzuki and Kuniyuki KAKUSHIMA and パールハットアヘメト and Hiroshi Nohira and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {La2O3/Ino.53Ga.0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate alectrode},
  journal = {Solid-State Electronics},
  year = 2013,
}

@article{CTT100658722,
  author = {Y. Wu and 竇春萌 and F. Wei and Kuniyuki KAKUSHIMA and 大毛利健治 and パールハットアヘメト and T. Watanabe and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and Keisaku Yamada and 片岡好則 and takeo hattori and HIROSHI IWAI},
  title = {Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability},
  journal = {Japanese Journal of Applied Physics},
  year = 2013,
}

@article{CTT100647652,
  author = {マイマイティ マイマイティレャアティ and 久保田透 and 関拓也 and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 片岡好則 and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Oxide and interface trap densities estimation in ultrathin W/ La2O3/Si MOS capacitors},
  journal = {Microelectronics Reliability},
  year = 2012,
}

@article{CTT100647591,
  author = {マイマイティ マイマイティレャアティ and Miyuki Kouda and Kuniyuki KAKUSHIMA and Hiroshi Nohira and Ahmet Parhat and 片岡好則 and 西山彰 and KAZUO TSUTSUI and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Valance number transition and silicate formation of cerrium oxide on Si(100)},
  journal = {Vacuum},
  year = 2012,
}

@article{CTT100647590,
  author = {マイマイティ マイマイティレャアティ and Miyuki Kouda and Takamasa Kawanago and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 片岡 好則 and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {The effect of remote Coulomb scattering on electron mobility in La2O3 gate stacked MOSFETs},
  journal = {Semiconductor Science and Technology},
  year = 2012,
}

@inproceedings{CTT100672909,
  author = {Jiangning Chen and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI and 齋藤渉},
  title = {Electrical characteristics of AlGaN/GaN HEMT with La2O3 gate dielectricsn},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672908,
  author = {wei li and 佐々木亮人 and 大図秀行 and 青木克明 and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Resistivity Measurement of Monoclinic Thin Tungsten Oxide Film Due to Annealing Processesn},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672427,
  author = {K. Tuokedaerhan and Shuhei Hosoda and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Mobility Improvement of La-silicate MOSFET by W2C Gate Electrode},
  booktitle = {K. Tuokedaerhan, S. Hosoda, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai, “Mobility Improvement of La-silicate MOSFET by W2C Gate Electrode”, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, February 7, 2014, Suzukake Hall, Suzukakedai Campus, Tokyo Institute of Technology, Japan},
  year = 2014,
}

@inproceedings{CTT100674053,
  author = {伊藤勇磨 and 堀隼人 and 筒井一生 and 角嶋邦之 and 若林整 and 片岡好則 and 西山彰 and 杉井信之 and 名取研二 and 岩井洋},
  title = {微細Si構造を利用した太陽電池に適した接合プロセスの提案},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674046,
  author = {松川佳弘 and 岡本真里 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋 and 齋藤渉},
  title = {AlGaN/GaN上のTi/C/TiN電極のコンタクト抵抗：Ti/C膜厚及び比率依存性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674681,
  author = {小路智也 and 伊藤勇磨 and 堀隼人 and 宮澤遼太 and 嘉藤貴史 and 角嶋邦之 and 若林整 and 筒井一生 and 片岡好則 and 岩井洋},
  title = {Surface States, Potential and Interface Control for Si Nanowire PV},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673474,
  author = {岡本真里 and 松川佳弘 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 大橋弘通 and 岩井洋 and 齋藤渉},
  title = {TiB2電極の熱処理によるAlGaN/GaNへのコンタクト特性の変化},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673466,
  author = {稲村太一 and 嘉藤貴史 and 佐々木亮人 and 青木克明 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {β-FeSi2の抵抗率熱処理依存性},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672972,
  author = {Yoshinori Nakamura and Kuniyuki KAKUSHIMA and 片岡好則 and Akira Nishiyama and Hitoshi Wakabayashi and Nobuyuki Sugii and HIROSHI IWAI},
  title = {Measurement of flat-band voltage shift using multi-stacked dielectric film},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672966,
  author = {Shuhei Hosoda and Kamale Tuokedaerhan and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Atomically flat interface of La-silicate/Si with W2C gate electrodes},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672409,
  author = {Y. Wu and Hiroki Hasegawa and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and 片岡好則 and Kenji Natori and HIROSHI IWAI},
  title = {Influence of structure parameter on Mg2Si-Si Hetero-junction Tunneling FET},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672963,
  author = {関拓也 and Kuniyuki KAKUSHIMA and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Physical understanding of La-silicate gate dielectrics thermally formed by interface reaction on Si(110) and (111)},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672961,
  author = {Hiroshi Oomine and DARYOUSH ZADEH and Kuniyuki KAKUSHIMA and Akira Nishiyama and Nobuyuki Sugii and 片岡好則 and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Effect of pretreatment for high-/k//InGaAs interface property},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672910,
  author = {Taichi Inamura and Takafumi Katou and 佐々木亮人 and 青木克明 and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {A study on silicide semiconductors for high efficiency thin film photovoltaic devices},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100669171,
  author = {Mari Okamoto and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and HIROSHI IWAI},
  title = {An Ohmic Contact Process for AlGaN/GaN Structures using TiS},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100669358,
  author = {K. Tuokedaerhan and Shuhei Hosoda and Yoshinori Nakamura and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Influence of Carbon Incorporation in W Gate Electrode for La-silicate Gate Dielectrics},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672369,
  author = {Y. Wu and Hiroki Hasegawa and Kuniyuki KAKUSHIMA and 大毛利健治 and T. Watanabe and Hitoshi Wakabayashi and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and 片岡好則 and Kenji Natori and Keisaku Yamada and HIROSHI IWAI},
  title = {Influence of Band Discontinuities at Source-Channel contact in Tunnel FET Performance},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672372,
  author = {DARYOUSH ZADEH and Hiroshi Oomine and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Low DitHigh-k/In0.53Ga0.47As Gate Stack with CET down to 0.73 nm and Thermally Stable Silicide Contact by Suppression of Interfacial Reaction},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672393,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Advantage of TiN Schottky Gate over Conventional Ni for Improved Electrical Characteristics in AlGaN/GaN HEMT,},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100672405,
  author = {unknown unknown and 竇春萌 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {A study on Resistive Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode with CeOx Buffer Layer},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100669174,
  author = {宋 禛漢 and Kazuki Matsumoto and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and 杉井信之 and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Resistivity of Ni silicide nanowires and its dependence on Ni film thickness used for the formation},
  booktitle = {ECS Transactions},
  year = 2013,
}

@inproceedings{CTT100669354,
  author = {Taichi Inamura and 佐々木亮人 and 青木克明 and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {A stacked sputtered process for β-FeSi2 formation},
  booktitle = {ECS Transactions},
  year = 2013,
}

@inproceedings{CTT100669355,
  author = {Taichi Inamura and 佐々木亮人 and 青木克明 and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {A stacked sputtered process for β-FeSi2 formation},
  booktitle = {ECS Transactions},
  year = 2013,
}

@inproceedings{CTT100669173,
  author = {Shuhei Hosoda and K. Tuokedaerhan and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Reliability of La-silicate MOS capacitors with tungsten carbide gate electrode for scaled EOT},
  booktitle = {ECS Transactions},
  year = 2013,
}

@inproceedings{CTT100669175,
  author = {Hiroshi Oomine and DARYOUSH ZADEH and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Electrical characterization of atomic layer deposited La2O3 films on In0.53Ga0.47AAs substrates},
  booktitle = {ECS Transactions},
  year = 2013,
}

@inproceedings{CTT100661655,
  author = {武井優典 and 神谷真行 and 寺山一真 and 米澤宏昭 and 齋藤 渉 and 筒井一生 and 角嶋邦之 and 若林整 and 片岡好則 and 岩井洋},
  title = {AlGaN/GaN系HEMTにおけるコンタクト特性のAlGaN層厚依存性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661657,
  author = {神谷真行 and 寺山一真 and 武井優典 and 齋藤 渉 and 角嶋邦之 and 若林整 and 片岡好則 and 筒井一生 and 岩井洋},
  title = {AlGaN/GaN HEMTへの凹凸AlGaN層導入による２次元電子ガス濃度分布評価および低抵抗コンタクト形成の可能性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661659,
  author = {大橋匠 and 若林整 and 角嶋邦之 and 杉井信之 and 西山彰 and 片岡好則 and 名取研二 and 筒井一生 and 岩井洋},
  title = {単層MoS2チャネルを用いたn-MOSFETの性能見積もり},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661660,
  author = {松川佳弘 and 岡本真里 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋 and 齋藤渉},
  title = {AlGaN/GaN上のTiC電極の電流電圧特性の熱処理温度依存性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661663,
  author = {嘉藤貴史 and 稲村太一 and 佐々木 亮人 and 青木 克明 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {Fe層とSi層の積層スパッタにより形成されたβ-FeSi2のキャリア密度に関する研究},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661664,
  author = {劉 璞誠 and 米澤宏昭 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {AlGaNのドライエッチングへのBcl3の影響に関する研究},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661678,
  author = {元木雅章 and 吉原亮 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {Pを導入したNiSi2電極を用いたn-Ge基板の電流電圧特性の熱処理依存性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100662336,
  author = {中村嘉基 and 細田修平 and Tuokedaerhan Kamale and 角嶋邦之 and 片岡好則 and 西山彰 and 若林整 and 杉井信之 and 筒井一生 and 名取研二 and 岩井洋},
  title = {W2Cゲート電極とLa-silicateゲート絶縁膜を用いたMOSキャパシタの信頼性評価},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100662337,
  author = {小路智也 and 石川昂 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {チャージポンピング法を用いた立体Si構造の絶縁膜界面準位の位置推定},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100662338,
  author = {岡本真里 and 松川佳弘 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {TiSi2電極の熱処理によるAlGaN/GaNへのコンタクト特性の変化},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100662339,
  author = {今村浩章 and 稲村太一 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {Krガスを用いた積層シリサイド化スパッタプロセスにより形成したNiSi2の薄膜評価},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100662340,
  author = {鹿国強 and 大嶺洋 and ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ and 角嶋邦之 and 西山彰 and 杉井信之 and 片岡好則 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {ALD堆積条件によるLa2O３/In0.53Ga0.47Asキャパシタの電気特性への影響},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100662341,
  author = {宋 禛漢 and 松本一輝 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Niシリサイドナノワイヤ抵抗率のNi膜厚依存性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661681,
  author = {長谷川明紀 and 呉研 and 宋 禛漢 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {低バンドギャップ、バンドオフセットを持つ半導体シリサイド/Si接合によるトンネルFET特性向上},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100657453,
  author = {shinichi kano and 竇春萌 and unknown unknown and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and 片岡好則 and Kenji Natori and Miranda Enrique and takeo hattori and HIROSHI IWAI},
  title = {Influence electrode materials on CeOx based resistive switching},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658112,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Interface properties of La-silicate gate dielectrics on Si(110)surface},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658134,
  author = {K. Tuokedaerhan and Shuhei Hosoda and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Work Function Extraction of W,Ta and Ti Carbides Formed by Multi Stacked Process},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658327,
  author = {Jiangning Chen and 鹿 国強 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical characteristics of AlGaN/GaN HEMT with La-oxide gate dielectrics},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658328,
  author = {Jiangning Chen and 鹿 国強 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical characteristics of AlGaN/GaN HEMT with La-oxide gate dielectrics},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658329,
  author = {Jiangning Chen and 鹿 国強 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical characteristics of AlGaN/GaN HEMT with La-oxide gate dielectrics},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658331,
  author = {Yuya Suzuki and ダリューシュザデ and Hiroshi Oomine and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Interface Engineering of La2O3/InGaAs Capacitors with High Temperature Stability},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658332,
  author = {田中祐樹 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Interface controlled metal contact for n-type diamonds},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658334,
  author = {Yuta Tamura and 吉原亮 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Stacked Ni-Silicidation Process for Schottky Barrier FET},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658335,
  author = {Kana Tsuneishi and Jiangning Chen and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {A Robust Ohmic Contact Process for AlGaN/GaN using Ti-silicide electrodes},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658354,
  author = {Kazuki Matsumoto and 小山将央 and Y. Wu and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Size dependent resistivity change of Ni-silicides in nano-region},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658361,
  author = {Taichi Inamura and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Formation of Fe-silicides using Multi-Stacking Sputtering Process},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658362,
  author = {Taichi Inamura and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Formation of Fe-silicides using Multi-Stacking Sputtering Process},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658363,
  author = {Hiroshi Oomine and ダリューシュザデ and Yuya Suzuki and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {La-Oxide Gate Dielectrics for InGaAs Substrates formed by Chemical Vapor Deposition},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658364,
  author = {Hiroshi Oomine and ダリューシュザデ and Yuya Suzuki and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {La-Oxide Gate Dielectrics for InGaAs Substrates formed by Chemical Vapor Deposition},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658365,
  author = {関拓也 and Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Infrared absorption study of La-silicate gate dielectrics},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658366,
  author = {Atsushi Takemasa and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Impact of Surface Treatments for Metal Contact on p-type Diamonds},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658389,
  author = {Shuhei Hosoda and K. Tuokedaerhan and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Improvenents in interface, states with W-carbide metal gate for La2O3/si MOS Capacitor},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658390,
  author = {吉原亮 and Yuta Tamura and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {A Novel Ohmic Contact Process for n-Ge Substrates},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658396,
  author = {Mari Okamoto and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Extraction of Energy Band Diagram of AlGaN/GaN with SiO2 Capped Annealing using X-ray Photoelectron Spectroscopy},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658546,
  author = {関拓也 and Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {International Symposium on Next-Generation Electronics(ISNE 2013)},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100658611,
  author = {Kazuki Matsumoto and 小山将央 and Y. Wu and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical Analyses of Nickel Silicide Formed on Si Nanowires with 10-nm-width},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100659873,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Interface properties of La-silicate gate dielectrics on Si(110)surface},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100660879,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Advantage of TiN Schottky Gate over Conventional Ni for Improved Electrical Characteristics in AlGaN/GaN HEMT},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100660886,
  author = {ダリューシュザデ and Hiroshi Oomine and Kuniyuki KAKUSHIMA and 片岡好則 and 西山彰 and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {Scalable La-silicate Gate Dielectric on InGaAs Substrate with High Thermal Stability and Low Interface State Density},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100660888,
  author = {unknown unknown and shinichi kano and 竇春萌 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI},
  title = {A Proposal of a Forming-Free Resistive Switching Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode using CeOx Buffer Layer},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661649,
  author = {石川昂 and 小路智也 and 角嶋邦之 and 若林整 and 片岡好則 and 西山彰 and 杉井信之 and 筒井一生 and 名取研二 and 岩井洋},
  title = {チャージポンピング法を用いた三次元Si構造の界面準位密度測定},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100657950,
  author = {Jiangning Chen and Kana Tsuneishi and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Thickness dependent electrical characteristics of AlGaN/GaN MOSHEMT with La2O3 gate dielectrics},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100657642,
  author = {Tohtarhan Kamal and R. Tan and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Interface Properties of La-silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100657639,
  author = {吉原亮 and Yuta Tamura and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Thermally stable NiSi2 for Ge contact with Schottky barrirer height modulation capability},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100657638,
  author = {Yuya Suzuki and ダリューシュザデ and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Effect of In0.53Ga0.47AAs surface nitridation on electrical characteristics of high-k/capacitors},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100657633,
  author = {Yuta Tamura and 吉原亮 and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {A Proposal of Schottky Barrire Height Tuning Method with Interface Controlled Ni/Si Stacked Silicidation Process},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100657562,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {(100)-and (110)-oriented nMOSFETs with highly Scaled EOT in La-silicate/Si Interface for Multi-gate Architecture},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657561,
  author = {Takamasa Kawanago and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {(100)-and (110)-oriented nMOSFETs with highly Scaled EOT in La-silicate/Si Interface for Multi-gate Architecture},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657454,
  author = {Wei Li and 中島一裕 and 竇春萌 and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and 片岡好則 and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Evaluation of Interfacial State Density of MOS Capacitor with Three-Dimensional Channel by Conductance Method},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657357,
  author = {Ryuji Hosoi and Yuya Suzuki and DARYOUSH ZADEH and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Characterization of matal Schottky junction for In0.53Ga0.47AAs substrates},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657951,
  author = {Jiangning Chen and Kana Tsuneishi and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Thickness dependent electrical characteristics of AlGaN/GaN MOSHEMT with La2O3 gate dielectrics},
  booktitle = {ECS Transactions},
  year = 2012,
}

@inproceedings{CTT100658060,
  author = {Kana Tsuneishi and Jiangning Chen and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Ti silicide electrodes low contact resistance for undoped AlGaN/GaN structure},
  booktitle = {ECS Transactions},
  year = 2012,
}