@article{CTT100658804,
  author = {小山将央 and M. Casse and R. Coquand and S. Barraud and C. Vizioz and C. Comboroure and P. Perreau and V. Maffini-Alvaro and C. Tabone, and L. Tosti and S. Barnola and V. Delaye and F. Aussenac and G. Ghibaudo and HIROSHI IWAI and G. Reimbold},
  title = {Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate silicon nanowire MOSFETs},
  journal = {Solid-State Electronics},
  year = 2013,
}