@article{CTT100813954,
  author = {Yiming Lei and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Masayuki Furuhashi and Shingo Tomohisa and Satoshi Yamakawa and Kuniyuki Kakushima},
  title = {Effect of Lanthanum Silicate Interface Layer on the Electrical Characteristics of 4H-SiC Metal-Oxide-Semiconductor Capacitors},
  journal = {Microelectronics Reliability},
  year = 2018,
}

@article{CTT100813955,
  author = {Yiming Lei and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Masayuki Furuhashi and Shingo Tomohisa and Satoshi Yamakaw and Kuniyuki Kakushima},
  title = {Improvement of SiO2/4H-SiC Interface properties by post-metallization annealing},
  journal = {Microelectronics Reliability},
  year = 2018,
}

@inproceedings{CTT100830074,
  author = {Y. M. Lei and T. Kaneko and H. Wakabayashi and K. Tsutsui and H. Iwai and K. Kakushima and M. Furuhashi and S. Tomohisa and S. Yamakawa},
  title = {Influence of Interface ALD-SiO2 Layer for Lanthanum Silicate Gate Dielectrics for 4H-SiC MOS Capacitors},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100660876,
  author = {Hiroyuki Yamada and Shiro Hino and Naruhisa Miura and Masayuki Imaizumi and Satoshi Yamakawa and EISUKE TOKUMITSU},
  title = {Fabrication of 4H-SiC MOSFETs Using Stacked Al2O3 Gate Insulator with Pre-Annealed Al2O3 Buffer Layer},
  booktitle = {},
  year = 2013,
}