@inproceedings{CTT100673182,
  author = {Kazuma Terayama and 中島 昭 and 西澤伸一 and 大橋弘通 and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and KAZUO TSUTSUI and HIROSHI IWAI},
  title = {Caluculation of ultimate on-resistance in GaN lateral HFETs  using device simulation},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673055,
  author = {劉 璞誠 and 中島 昭 and Kuniyuki KAKUSHIMA and T. Makino and M. Ogura and 西澤伸一 and HIROSHI IWAI and 大橋弘通},
  title = {A study on mobility of 2D hole gas in AlGaN/GaN heterostructure with piezo- and spontaneous polarizationn},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673181,
  author = {Hiroaki Yonezawa and Rei Kayanuma and 中島 昭 and 西澤伸一 and 大橋弘通 and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and HIROSHI IWAI},
  title = {AlGaN/GaN-based p-channel HFETs with wide-operating temperature},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674052,
  author = {米澤宏昭 and 萱沼怜 and 中島 昭 and 西澤伸一 and 大橋弘通 and 筒井一生 and 角嶋邦之 and 若林整 and 岩井洋},
  title = {広い温度範囲で動作するAlGaN/GaN系Pチャネル型HFET},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673377,
  author = {中島 昭 and Hiroaki Yonezawa and KAZUO TSUTSUI and Kuniyuki KAKUSHIMA and 西澤伸一 and 大橋弘通 and Hitoshi Wakabayashi and HIROSHI IWAI},
  title = {One-chip operation of GaN-based P-channel and N-channel Heterojunction Field Effect Transistors},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674051,
  author = {寺山一真 and 中島 昭 and 西澤伸一 and 大橋弘通 and 角嶋邦之 and 若林整 and 筒井一生 and 岩井洋},
  title = {デバイスシミュレーションによる横型GaNパワーデバイスの極限オン抵抗の試算},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100661653,
  author = {米澤宏昭 and 中島  昭 and 西澤 伸一 and 大橋 弘通 and 筒井一生 and 角嶋邦之 and 若林整 and 岩井洋},
  title = {AlGaN/GaN系pチャンネルHFETの製作},
  booktitle = {},
  year = 2013,
}