@article{CTT100683458,
  author = {J. Hasegawa and M. Furuhashi and S. Nakata and T. Iwasaki and T. Kodera and T. Nishimura and M. Hatano and M  Noguchi},
  title = {Analysis of effect of gate oxidation at SiC MOS interface on  threshold-voltage shift using deep-level transient spectroscopy},
  journal = {Jpn. J. Appl. Phys.},
  year = 2015,
}