論文

• Kazuo Tsutsui, Tomohiro Matsushita, Kotaro Natori, Takayuki Muro, Yoshitada Morikawa, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kouichi Hayashi, Fumihiko Matsui, Toyohiko Kinoshita. Individual Atomic Imaging of Multiple Dopant Sites in As-Doped Si Using Spectro-Photoelectron Holography, Nano Letters, Vol. 17, pp. 7533-7538, Nov. 2017.
• Kenichi Ozawa, Takashi Kakubo, Katsunori Shimizu, Naoya Amino, Kazuhiko Mase, Eiji Ikenaga, Tetsuya Nakamura, Toyohiko Kinoshita, Hiroshi Oji. In situ chemical state analysis of buried polymer/metal adhesiveinterface by hard X-ray photoelectron spectroscopy, Applied Surface Science, Vol. 320, pp. 117-182, Sept. 2014.  公式リンク  
  

国際会議発表 (査読有り)

• T. Kinoshita, T. Matsushita, T. Muro, T. Ohkochi, H. Osawa, K. Hayashi, F. Matsui, K.Tsutsui, K. Natori, Y. Morikawa, T. Hoshii, K. Kakushima, H. Wakabayashi, A. Takeda, K. Terashima, W. Hosoda, T. Fukura, Y. Yano, H. Fujiwara, M. Sunagawa, H. Kato, T. Oguchi, T. Wakita, Y. Muraoka, T. Yokoya. Status of Photoelectron Holography at SPring-8: Experimental Setup for Time- and Space-Resolved Technique and Application to Individual Atomic Imaging of Multiple Dopant Sites, T. Kinoshita, T. Matsushita, T. Muro, T. Ohkochi, H. Osawa, K. Hayashi, F. Matsui, K.Tsutsui, K. Natori, Y. Morikawa, T. Hoshii, K. Kakushima, H. Wakabayashi, A. Takeda, K. Terashima, W. Hosoda, T. Fukura, Y. Yano, H. Fujiwara, M. Sunagawa, H. Kato, T. Oguchi, T. Wakita, Y. Muraoka and T. Yokoya, Nov. 2019.
• Kazuo Tsutsui, Tomohiro Matsushita, Takayuki Muro, Yoshitada Morikawa, Kotaro Natori, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kouichi Hayashi, Fumihiko Matsui, Toyohiko Kinoshita. 3D Atomic Imaging of As Doped in Si by Spectro-Photoelectron Holography, 8th International Symposium on Control of Semiconductor Interfaces (ISCSI-8), Nov. 2019.
• Kotaro Natori, Tatsuhiro Ogawa, Takuya Hoshii, Tomohiro Matsushia, Takayuki Muro, Toyohiko Kinoshita, Yoshitada Morikawa, Kuniyuki Kakushima, Fumihiko Matsui, Kouichi Hayashi, Hitoshi Wakabayashi, Kazuo Tsutsui. Atomic scale analyses of As doped in Si by soft X-ray photoelectron spectroscopy and spectro-photoelectron holography, 11th Int. Symp. on Atomic Level Characterization (ALC'17), Dec. 2017.
• Youhei Miyata, Jun Kanehara, Hiroshi Nohira, Yudai Izumi, Takayuki Muro, Toyohiko Kinoshita, Parhat Ahmet, Kuniyuki Kakushima, Kazuo Tsutsui, Takeo Hattori1, Hiroshi Iwai. Analysis of Chemical Bonding States of Boron Doped in Si Fin Structures: Selective Observation on Top Surfaces and Sidewalls, 12th Int. Workshop on Junction Technology (IWJT2012), May 2012.
• Jun Kanehara, Youhei Miyata, Hiroshi Nohira, Yudai Izumi, Takayuki Muro, Toyohiko Kinoshita, Parhat Ahmet, Kuniyuki Kakushima, Kazuo Tsutsui, Takeo Hattori, Hiroshi Iwai. Chemical Bonding States of As in Si Shallow Junctions Detected by Soft X-ray Photoelectron Spectroscopy and their Profiles, 2011 Int. Conf. on Solid State Devices and Materials (SSDM 2011), Sept. 2011.
• Youhei Miyata, Jun Kanehara, Hiroshi Nohira, Yudai Izumi, Takayuki Muro, Toyohiko Kinoshita, Parhat Ahmet, Kuniyuki Kakushima, Kazuo Tsutsui, Takeo Hattori, Hiroshi Iwai. Soft X-ray Photoelectron Spectroscopy on Chemical Bonding States of Boron Doped in Si Fin Structures, 2011 Int. Conf. on Solid State Devices and Materials (SSDM 2011), Sept. 2011.

国際会議発表 (査読なし・不明)

• K. Tsutsui, K. Natori, T. Ogawa, T. Muro, T. Matsuishita, Y. Morikawa, T. Hoshii, K. Kakushima, H. Wakabayashi, K. Hayashi, F. Matsui, T. Kinoshita. Analyses of 3D Atomic Arrangements of Dopants in Si Crystal Using Spectro-photoelectron Holography, Material Resarch Meeing 2019 (MRM2019), Dec. 2019.
• Tomohiro Matsushita, Takayuki Muro, Toyohiko Kinoshita, Fumihiko Matsui, Hiroshi Daimon, Naohisa Happo, Sinya Hosokokawa, Kenji Ohoyama, Kazuo Tsutsui, Takayoshi Yokoya, Kouichi Hayashi. Three-dimensional atomic imaging of dopants using atomic resolution holography, 14th Int. Conf. on Electron Spectroscopy and Structure (ICEESS-14), Oct. 2018.
• Kazuo Tsutsui, Tomohiro Matsushita, Takayuki Muro, Yoshitada Morikawa, Kotaro Natori, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kouichi Hayashi, Fumihiko Matsui, Toyohiko Kinoshita. Atomic Sites of Dopants in Si Visualized by Spectro-Photoelectron Holography, International Conference on Solid-State Devices and Materials (SSDM2018), Sept. 2018.
• Kazuo Tsutsui, Tomohiro Matsushita, Takayuki Muro, Yoshitada Morikawa, Kotaro Natori, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kouichi Hayashi, Fumihiko Matsui, Toyohiko Kinoshita. Analyses of 3D Atomic Arrangements of Impurity Atoms Doped in Silicon by Spectro-Photoelectron Holography Technique, Intnational Workshop on Junction Technology (IWJT2018), Mar. 2018.

国内会議発表 (査読なし・不明)

• 筒井 一生, 松下 智裕, 名取 鼓太郞, 小川 達博, 室 隆桂之, 森川 良忠, 星井 拓也, 角嶋 邦之, 若林 整, 林 好一, 松井 文彦, 木下 豊彦. 光電子ホログラフィーによる半導体中の不純物の3Ｄ原子イメージング, 第66回応用物理学会春期学術講演会, Mar. 2019.
• 筒井 一生, 松下 智裕, 名取 鼓太郞, 室 隆桂之, 森川 良忠, 星井 拓也, 角嶋 邦之, 若林 整, 林 好一, 松井 文彦, 木下 豊彦. 光電子分光ホログラフィーによるAsドープSi中のドーパント複数サイトの原子配列イメージング, 第66回応用物理学会春期学術講演会, Mar. 2019.
• 筒井一生, 松下智裕, 室隆桂之, 森川良忠, 名取鼓太郎, 小川達博, 星井拓也, 角嶋邦之, 若林整, 林好一, 松井文彦, 木下豊彦. 光電子ホログラフィー法によるシリコン中にドープされた不純物の三次元原子配列構造の解析, 応用物理学会シリコンテクノロジー分科会第216回研究集会, Feb. 2019.

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