@inproceedings{CTT100830471,
  author = {K. Terayama and A. Nakajima and S. Nishizawa and H. Ohasi and K. Kakushima and H. Wakabayashi and K. Tsutsui and H. Iwai},
  title = {Calculation of ultimate on-resistance in GaN lateral HFETs using device simulation},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830473,
  author = {Y. Ito and H. Hori and K. Tsutsui and K. Kakushima and H. Wakabayashi and Y.Kataoka and A.Nishiyama and N. Sugii and K. Natori and H. Iwai},
  title = {Proposal of junction formation process for solar cells made of silicon microstructures},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830474,
  author = {M. Kamiya and Y. Takei and W. Saito and K. Kakushima and H. Wakabayashi and Y. Kataoka and K. Tsutsui and H. Iwai},
  title = {Evaluation of 2DEG distribution on AlGaN/GaN HEMTs introducing uneven AlGaN layers and its possibility for low-resistive contacts formation},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830478,
  author = {T. Kato and T.Inamura and A.Sasaki and K.Aoki and K.Kakushima and Y.Kataoka and A. Nishiyama and N. Sugii and H.Wakabayashi and K. Tsutsui and K. Natori and H. Iwai},
  title = {Thickness-dependent electrical characterization of β‐FeSi2},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830479,
  author = {Minjae Yoon and K. Terayama and A. Nakajima and S. Nichizawa and H. Ohasi and K. Kakushima and H. Wakabayashi and K. Tsutsui and H. Iwai},
  title = {Investigation into scaling law in AlGaN/GaN Fin field effect transistors by device simulation},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830480,
  author = {M. Motoki and K. Kakushima and Y. Kataoka and A. Nishiyama and N. Sugii and H.Wakabayashi and K. Tsutsui and K. Natori and H. Iwai},
  title = {Effect of Annealing Temperature on Sheet Resistance of Ni Germanide Formed by Multi-Layered Ni and Ge Films},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830277,
  author = {T. Ohashi and H. Wakabayashi and K. Kakushima and N. Sugii and A. Nishiyama and Y. Kataoka and K. Natori and K. Tsutsui and H. Iwai},
  title = {Performance Prediction on n-MOSFET using Single-Layer MoS2 Channel},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830481,
  author = {H. Hasegawa and Y.Wu and J.Song and K. Kakushima and Y.Kataoka and A. Nishiyama and N. Sugii and H. Wakabayashi and K. Tsutsui and K. Natori and H. Iwai},
  title = {Improvement of tunnel FET performance using narrow bandgap semiconductor silicide /Si hetero-structure source electrod},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830483,
  author = {Y. Nakamura and K. Kakushima and Y. Kataoka and A. Nishiyama and H. Wakabayashi and N. Sugii and K. Tsutsui and K. Natori and H. Iwai},
  title = {Measurement of flat-band voltage shift using multi-stacked dielectric film},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830484,
  author = {M. Okamoto and K. Kakushima and Y. Kataoka and A. Nishiyama and N. Sugii and H. Wakabayashi and K. Tsutsui and H. Iwai and W. Saito},
  title = {An Ohmic contact process for AlGaN/GaN Structures using TiSi2 electrodes},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830485,
  author = {Chunmeng Dou and Kakushima and Y. Kataoka and A. Nishiyama and N. Sugii and H. Wakabayashi and K. Tsutsui and K. Natori and H. Iwai},
  title = {Determination of oxide traps distribution in high-k/InGaAs MOS capacitor by capacitance-voltage measurement},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830490,
  author = {T. Seki and T. Kawanago and K. Kakushima and P. Ahmet and Y. Kataoka and A. Nishiyama and N. Sugii and K. Tsutsui and K. Natori and T. Hattori and H. Iwai},
  title = {Electrical and Infrared Absorption Studies on La-silicate/Si Interface},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100830496,
  author = {Y. Tanaka and K. Kakushima and P. Ahmet and Y. Kataoka and A. Nishiyama and N. Sugii and K. Tsutsui and K. Natori and T. Hattori and S. Yamasaki and H. Iwai},
  title = {TiC Electrode Formed by Multi-Stacking Process for Diamond Contact Metal},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100830503,
  author = {T. Kamale and R. Tan and K. Kakushima and P. Ahmet and Y. Kataoka and A. Nishiyama and N. Sugii and K. Tsutsui and K. Natori and T. Hattori and H. Iwai},
  title = {Interface Properties La-Silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100830553,
  author = {S. Kano and C. Dou and M. Hadi and K. Kakushima and P. Ahmet and A. Nishiyama and N. Sugii and K. Tsutsui and Y. Kataoka and K. Natori and E. Miranda and T. Hattori and H. Iwai},
  title = {Influence of Electrode Material for CaOx Based Resistive Switching},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100830546,
  author = {T. Kawanago and K. Kakushima and P. Ahmet and Y. Kataoka and A. Nishiyama and N. Sugii and K. Tsutsui and K. Natori and T. Hattori and H. Iwai},
  title = {(100)- and (110)-Oriented nMOSFETs with Highly Scaled EOT in La-Silicate/Si Interface for Multi-Gate Architecture},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100830557,
  author = {K. Kakushima and J. Kanehara and Y. Izumi and T. Muro and T. Kinoshita and P. Ahmet and K. Tsutsui and T. Hattori and H. Iwai},
  title = {Concentration Depth Profiling of Heavily Doped Boron at and near SiO2/Si Interface by Angle-resolved Soft X-ray Photoelectron Spectroscopy},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100830564,
  author = {D. Kitayama and T. Koyanagi and K. Kakushima and P. Ahmet and K. Tsutsui and A. Nishiyama and N. Sugii and K. Natori and T. Hattori and H. Iwai},
  title = {TiN Capping Effect on High Temperature Annealed RE-Oxide Devices for Scaled EOT},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100830567,
  author = {H. Nakayama and K. Kakushima and P. Ahmet and K. Tsutsui and N. Sugii and T. Hattori and H. Iwai},
  title = {Electrical Characteristics of La2O3 Gated MOS Capacitors with Different Wafer Orientation},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100830630,
  author = {K. Noguchi and W. Hosoda and K. Matano and K. Kakushima and P. Ahmet and K. Tsutsui and N. Sugii and A. Chandorkar and T. Hattori and H. Iwai},
  title = {Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830569,
  author = {B. Mizuno and Y. Sasaki and C. G. Jin and K. Okashita and K. Nakamoto and T. Kitaoka and K. Tsutsui and H. A. Sauddin and H. Iwai},
  title = {Production-worthy approach of Plasma Doping (PD)},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830625,
  author = {M. Hino and K. Nagata and T. Yoshida and D. Kosemura and K. Kakushima and P. Ahmet and K. Tsutsui and N. Sugii and A. Ogura and T. Hattori and H. Iwai},
  title = {Study on Stress Memorization by Argon Implantation and Annealing},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830626,
  author = {K. Kakushima and K. Okamoto and K. Tachi and S. Sato and J. Song and T. Kawanago and P. Ahmet and N. Sugii and K. Tsutsui and T. Hattori and H. Iwai},
  title = {Interfacial Dipole Measurement of Dielectric/Silicon Interface by X-ray Photoelectron Spectroscopy},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830627,
  author = {M. Kouda and K. Tachi and K. Kakushima and P. Ahmet and K. Tsutsui and N. Sugii and A. Chandorkar and T. Hattori and H. Iwai},
  title = {Electric Properties of CeOX /La2O3 Stack as Gate Dielectric in Advanced MOSFET Technology},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830628,
  author = {H. Nohira and Y. Takenaga and K. Kakushima and P. Ahmet and K. Tsutsui and H. Iwai},
  title = {Annealing-temperature Dependence of Compositional Depth Profile and Chemical Structures of LaOx/ScOx/Si and ScOx/LaOx/Si Interfacial Transition Layer},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830629,
  author = {K. Okamoto and K. Kakushima and P. Ahmet and K. Tsutsui and N. Sugii and A. Chandorkar and T. Hattori and H. Iwai},
  title = {0.5 nm EOT MOS Structure with TaSix/W Stacked Gate Electrode},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830633,
  author = {Y. Kobayashi and A. B. Sachid and K. Tsutsui and K. Kakushima and P. Ahmet and V. R. Rao and H. Iwai},
  title = {Analysis of Threshold Voltage Variations of FinFETs Relating to Short Channel Effects},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830634,
  author = {Y. Kobayashi and K. Tsutsui and K. Kakushima and P. Ahmet and V. R. Rao and H. Iwai},
  title = {Analysis of Threshold Voltage Variations of FinFETs : Separation of Short Channel Effects and Space Charge Effects},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830635,
  author = {K. Tsutsui and M. Watanabe and Y. Nakagawa and T. Matsuda and Y. Yoshida and E. Ikenaga and K. Kakushima and P. Ahmet and H. Nohira and T. Maruizumi and A. Ogura and T. Hattori and H. Iwai},
  title = {New Analysis of Heavily Doped Boron and Arsenic in Shallow Junctions by X-Ray Photoelectron Spectroscopy},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830637,
  author = {K. Kakushima and K. Tachi and M. Adachi and K. Okamoto and S. Sato and J. Song and T. Kawanago and P. Ahmet and K. Tsutsui and N. Sugii and T. Hattori and H. Iwai},
  title = {Advantage of La2O3 Gate Dielectric Over HfO2 for Direct Contact and Mobility Improvment},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830650,
  author = {K. Tsutsui and T. Shiozawa and K. Nagahiro and Y. Ohishi and K. Kakushima and P. Ahmet and N. Urushihara and M. Suzuki and H. Iwai},
  title = {Effects of B or Al Interface Layers on Thermal Stability of Ni Silicide on Si},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830655,
  author = {K. Kakushima and K. Okamoto and M. Adachi and K. Tachi and S. Sato and T. Kawanago and J. Song and P. Ahmet and N. Sugii and K. Tsutsui and T. Hattori and H. Iwai},
  title = {Impact of Thin La2O3 Insertion for HfO2 MOSFET},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100830662,
  author = {Y. Kobayashi and K. Tsutsui and K. Kakushima and V. Hariharan and V. R. Rao and P. Ahmet and H. Iwai},
  title = {Parasitic Effects Depending on Shape of Spacer Region on FinFETs},
  booktitle = {},
  year = 2007,
}

@inproceedings{CTT100830711,
  author = {K. Tachi and H. Iwai and T. Hattori and N. Sugii and K. Tsutsui and P. Ahemt and K. Kakushima},
  title = {Effect of Oxygen for Ultra-Thin La2O3 Film Deposition},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100830713,
  author = {Y. Shiino and K. Kakushima and P. Ahmet and K. Tsutsui and N. Sugii and T. Hattori and H. Iwai},
  title = {La2O3 Gate Dielectric Thin Film with Sc2O3 Buffer Layer for High Temperature Annealing},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100830714,
  author = {H. Sauddin and Y. Sasaki and H. Ito and B. Mizuno and P. Ahmet and K. Kakushima and N. Sugii and K. Tsutsui and H. Iwai},
  title = {Leakage Current Characteristics of Ultra-Shallow Junctions formed by B2H6 Plasma Doping},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100830716,
  author = {H. Nohira and T. Matsuda and K. Tachi and Y. Shiino and J. Song and Y. Kuroki and J. Ng and P. Ahmet and K. Kakushima and K. Tsutsui and E. Ikenaga and K. Kobayashi and H. Iwai and T. Hattori},
  title = {Effect of Deposition Temperature on Thermal Stability of Lanthanum Oxide/Si Interfacial Transition Layer},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100830665,
  author = {Y. Sasaki and H. Ito and K. Okashita and H. Tamura and C. G. Jin and B. Mizuno and T. Okumura and I. Aiba and Y. Fukagawa and H. Sauddin and K. Tsutsui and H. Iwai},
  title = {Production-worthy USJ formation by self-regulatory plasma doping method},
  booktitle = {},
  year = 2006,
}

@inproceedings{CTT100830719,
  author = {Y. Kim and A. Kuriyama and I. Ueda and S. Ohmi and K. Tsutsui and H. Iwai},
  title = {Electrical Characteristics of High-k La2O3 Thin Film Deposited by E-Beam Evaporation Method},
  booktitle = {},
  year = 2003,
}

@inproceedings{CTT100830721,
  author = {Y. Sasaki and B. Mizuno and S. Akama and R. Higaki and K. Tsutsui and S. Ohmi and H. Iwai},
  title = {Helicon Wave Plasma Doping System},
  booktitle = {},
  year = 2002,
}

@inproceedings{CTT100830720,
  author = {Y. Sasaki and B. Mizuno and S. Akama and R. Higaki and K. Tsutsui and S. Ohmi and H. Iwai},
  title = {Gas Phase Doping at Room Temperature},
  booktitle = {},
  year = 2002,
}