論文

• T. Aota, A. Hayasaka, I. Makabe, S. Yoshida, T. Gotow, Y. Miyamoto. Wet etching for isolation of N-polar GaN HEMT structure by electrodeless photo-assisted electrochemical reaction, Japanese Journal of Applied Physics, 60, SCCF06, Mar. 2021.

国際会議発表 (査読有り)

• K. Makiyama, S. Yoshida, K. Nakata, Y. Miyamoto. Innovative RF Device Technologies for Advanced Information and Communications Network Society, IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, Oct. 2022.
• Tomoya Aota, Akihiro Hayasaka, isao makabe, Shigeki Yoshida, Takahiro Gotow, YASUYUKI MIYAMOTO. Wet Etching for Isolation of N-polar GaN HEMT Structure by Electrodeless Photo-Assisted Electrochemical Reaction, 33rd International Microprocesses and Nanotechnology Conference (MNC 2020), Nov. 2020.

国内会議発表 (査読なし・不明)

• 青田 智也, 早坂 明泰, 眞壁 勇夫, 吉田 成輝, 後藤 高寛, 宮本 恭幸. N極性GaN HEMT構造での無電極PECエッチング, 第81回 応用物理学会秋季学術講演会, Sept. 2020.

[ BibTeX 形式で保存 ]    [ 論文・著書をCSV形式で保存 ]    [ 特許をCSV形式で保存 ]