@article{CTT100875615,
  author = {Takamasa KAWANAGO and Takahiro Matsuzaki and Ryosuke Kajikawa and Iriya Muneta and Takuya HOSHII and Kuniyuki Kakushima and Kazuo TSUTSUI and Hitoshi WAKABAYASHI},
  title = {Experimental demonstration of high-gain CMOS Inverter operation at low Vdd down to 0.5 V consisting of WSe2 n/p FETs},
  journal = {Japanese Journal of Applied Physics (JJAP)},
  year = 2022,
}

@inproceedings{CTT100902941,
  author = {Takamasa Kawanago and Takahiro Matsuzaki and Ryosuke Kajikawa and Iriya Muneta and Takuya Hoshii and Kuniyuki Kakushima and Kazuo Tsutsui and Hitoshi Wakabayashi},
  title = {Experimental Demonstration of High-Gain CMOS Inverter at Low Vdd  Down to 0.5 V Consisting of WSe2  n/p FETs},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100843508,
  author = {Takahiro Matsuzaki and Takamasa Kawanago and SHUNRI ODA},
  title = {Impact of Contact Doping on Electrical Characteristics in WSe2 FET},
  booktitle = {},
  year = 2020,
}

@inproceedings{CTT100822658,
  author = {松﨑貴広 and 大場智昭 and 川那子高暢 and 小田俊理},
  title = {PVAによるMoS2FETへのキャリアドーピングと電気特性への影響},
  booktitle = {},
  year = 2019,
}