@inproceedings{CTT100830471,
  author = {K. Terayama and A. Nakajima and S. Nishizawa and H. Ohasi and K. Kakushima and H. Wakabayashi and K. Tsutsui and H. Iwai},
  title = {Calculation of ultimate on-resistance in GaN lateral HFETs using device simulation},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100830479,
  author = {Minjae Yoon and K. Terayama and A. Nakajima and S. Nichizawa and H. Ohasi and K. Kakushima and H. Wakabayashi and K. Tsutsui and H. Iwai},
  title = {Investigation into scaling law in AlGaN/GaN Fin field effect transistors by device simulation},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674051,
  author = {寺山一真 and 中島 昭 and 西澤伸一 and 大橋弘通 and 角嶋邦之 and 若林整 and 筒井一生 and 岩井洋},
  title = {デバイスシミュレーションによる横型GaNパワーデバイスの極限オン抵抗の試算},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674044,
  author = {Yoon Minjae and 寺山一真 and 中島 昭 and 西澤伸一 and 大橋弘通 and 角嶋邦之 and 若林整 and 筒井一生 and 岩井洋},
  title = {デバイスシミュレーションによるAlGaN/GaN系FinFETsにおけるスケーリング則の検証},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673182,
  author = {Kazuma Terayama and 中島 昭 and 西澤伸一 and 大橋弘通 and Kuniyuki KAKUSHIMA and Hitoshi Wakabayashi and KAZUO TSUTSUI and HIROSHI IWAI},
  title = {Caluculation of ultimate on-resistance in GaN lateral HFETs  using device simulation},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100661655,
  author = {武井優典 and 神谷真行 and 寺山一真 and 米澤宏昭 and 齋藤 渉 and 筒井一生 and 角嶋邦之 and 若林整 and 片岡好則 and 岩井洋},
  title = {AlGaN/GaN系HEMTにおけるコンタクト特性のAlGaN層厚依存性},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100661657,
  author = {神谷真行 and 寺山一真 and 武井優典 and 齋藤 渉 and 角嶋邦之 and 若林整 and 片岡好則 and 筒井一生 and 岩井洋},
  title = {AlGaN/GaN HEMTへの凹凸AlGaN層導入による２次元電子ガス濃度分布評価および低抵抗コンタクト形成の可能性},
  booktitle = {},
  year = 2013,
}