@article{CTT100668071, author = {T. Oshima and M. Niwa and A. Mukai and T. Nagami and T. Suyama and A. Ohtomo}, title = {Epitaxial growth of wide-band-gap ZnGa2O4 films by mist chemical vapor deposition}, journal = {Journal of Crystal Growth}, year = 2014, } @article{CTT100662826, author = {T. Oshima and K. Kaminaga and H. Mashiko and A. Mukai and K. Sasaki and T. Masui and A. Kuramata and S. Yamakoshi and A. Ohtomo}, title = {β-Ga2O3 single crystal as a photoelectrode for water splitting}, journal = {Japanese Journal of Applied Physics}, year = 2013, } @article{CTT100653483, author = {T. Oshima and K. Kaminaga and A. Mukai and K. Sasaki and T. Masui and A. Kuramata and S. Yamakoshi and S. Fujita and A. Ohtomo}, title = {Formation of semi-insulating layers on semiconducting β-Ga2O3 single crystals by thermal oxidation}, journal = {Japanese Journal of Applied Physics}, year = 2013, } @article{CTT100642859, author = {T. Oshima and T. Nakazono and A. Mukai and A. Ohtomo}, title = {Epitaxial growth of γ-Ga2O3 films by mist chemical vapor deposition}, journal = {Journal of Crystal Growth}, year = 2012, } @inproceedings{CTT100680941, author = {R. Wakabayashi and M. Hattori and T. Oshima and A. Mukai and K. Sasaki and T. Masui and A. Kuramata and S. Yamakoshi and K. Yoshimatsu and A. Ohtomo}, title = {Oxygen-radical-assisted pulsed-laser deposition of β-(AlxGa1-x)2O3 alloy films}, booktitle = {}, year = 2014, } @inproceedings{CTT100676383, author = {向井 章 and 大島 孝仁 and 吉松 公平 and 藤井 俊輔 and 須山 敏尚 and 大友 明}, title = {LaGaO3エピタキシャル薄膜の成長と深紫外カソードルミネッセンス特性評価}, booktitle = {}, year = 2014, } @inproceedings{CTT100673740, author = {M. Niwa and A. Mukai and T. Oshima and T. Nagami and T. Suyama and A. Ohtomo}, title = {Epitaxial growth of ZnGa2O4 films by mist chemical vapor deposition}, booktitle = {}, year = 2014, } @inproceedings{CTT100672688, author = {T. Oshima and K. Kaminaga and H. Mashiko and A. Mukai and K. Sasaki and T. Masui and A. Kuramata and S. Yamakoshi and A. Ohtomo}, title = {β-Ga2O3 photoeledtrode for water splitting}, booktitle = {}, year = 2014, } @inproceedings{CTT100672689, author = {T. Oshima and M. Niwa and A. Mukai and T. Nagami and T. Suyama and A. Ohtomo}, title = {Epitaxial growth of wide-band-gap ZnGa2O4 films}, booktitle = {}, year = 2014, } @inproceedings{CTT100665256, author = {A. Mukai and T. Oshima and K. Sasaki and T. Masui and A. Kuramata and S. Yamakoshi and A. Ohtomo}, title = {Doping control in device-grade β-Ga2O3 homoepitaxial films grown by pulsed-laser deposition}, booktitle = {}, year = 2013, } @inproceedings{CTT100687758, author = {大島 孝仁 and 中園 敦巳 and 丹羽 三冬 and 向井 章 and 大友 明}, title = {ワイドギャップガリウム系酸化物薄膜のエピタキシャル成長と物性}, booktitle = {}, year = 2013, } @inproceedings{CTT100660333, author = {丹羽 三冬 and 向井 章 and 大島 孝仁 and 長見 知史 and 須山 敏尚 and 大友 明}, title = {ミストCVD法によるZnGa2O4薄膜のエピタキシャル成長}, booktitle = {}, year = 2013, } @inproceedings{CTT100660332, author = {向井 章 and 大島 孝仁 and 佐々木 公平 and 増井 建和 and 倉又 朗人 and 山腰 茂伸 and 大友 明}, title = {PLD法による(201)面β-Ga2O3ホモエピタキシャル成長の温度依存性}, booktitle = {}, year = 2013, } @inproceedings{CTT100660334, author = {大島 孝仁 and 神永 健一 and 増子 尚徳 and 向井 章 and 佐々木 公平 and 増井 建和 and 倉又 朗人 and 山腰 茂伸 and 大友 明}, title = {β-Ga2O3単結晶光電極の特性評価}, booktitle = {}, year = 2013, } @inproceedings{CTT100660373, author = {T. Oshima and A. Mukai and K. Sasaki and T. Masui and A. Kuramata and S. Yamakoshi and A. Ohtomo}, title = {β-Al2XGa2-2XO3 thin films for β-Ga2O3 hetero-device applications}, booktitle = {}, year = 2013, } @inproceedings{CTT100673391, author = {T. Oshima and K. Kaminaga and A. Mukai and K. Sasaki and T. Masui and A. Kuramata and S. Yamakoshi and S. Fujita and A. Ohtomo}, title = {Semi-insulation behavior in conducting β-Ga2O3 single crytal surfaces by thermal oxidation}, booktitle = {}, year = 2013, } @inproceedings{CTT100657070, author = {A. Mukai and T. Oshima and T. Nagami and K. Fukuda and T. Suyama and A. Ohtomo}, title = {Cathodoluminescence properties of β-Al2xGa2-2xO3}, booktitle = {}, year = 2013, } @inproceedings{CTT100657069, author = {T. Oshima and K. Kaminaga and A. Mukai and K. Sasaki and T. Masui and A. Kuramata and S. Yamakoshi and S. Fujita and A. Ohtomo}, title = {Semi-insulation of conducting β-Ga2O3 single crystal surfaces by thermal oxidation}, booktitle = {}, year = 2013, } @inproceedings{CTT100652779, author = {大島 孝仁 and 神永 健一 and 向井 章 and 佐々木 公平 and 増井 建和 and 倉又 朗人 and 山腰 茂伸 and 藤田 静雄 and 大友 明}, title = {熱酸化によるβ-Ga2O3単結晶表面の半絶縁層形成}, booktitle = {}, year = 2013, } @inproceedings{CTT100652775, author = {向井 章 and 大島 孝仁 and 佐々木 公平 and 増井 建和 and 倉又 朗人 and 山腰 茂伸 and 大友 明}, title = {β-Ga2O3 (201)基板上のAl2xGa2-2xO3薄膜の成長制御}, booktitle = {}, year = 2013, } @inproceedings{CTT100644063, author = {向井 章 and 大島 孝仁 and 大友 明}, title = {カソードルミネッセンス法によるAl2xGa2-2xO3薄膜の発光特性評価}, booktitle = {}, year = 2012, } @inproceedings{CTT100644312, author = {T. Oshima and T. Nakazono and A. Mukai and A. Ohtomo}, title = {Mist chemical vapor deposition of γ-phase Ga2O3 thin films}, booktitle = {}, year = 2012, } @inproceedings{CTT100640162, author = {大島 孝仁 and 中園 敦巳 and 向井 章 and 大友 明}, title = {ミストCVD法によるγ型Ga2O3のエピタキシャル安定化}, booktitle = {}, year = 2012, } @inproceedings{CTT100634775, author = {向井 章 and 中園 敦巳 and 大島 孝仁 and 大友明}, title = {Ga2O3の結晶多形とヘテロエピ構造:β-Ga2O3/(0001)α-Al2O3}, booktitle = {}, year = 2012, } @inproceedings{CTT100624737, author = {向井 章 and 大島 孝仁 and 大友 明}, title = {PLD 法によるAl2xGa2-2xO3薄膜の作製と光学的特性}, booktitle = {}, year = 2011, } @inproceedings{CTT100619477, author = {向井 章 and 大島孝仁 and 大友明}, title = {Al2XGa2-2XO3コンポジションスプレッド薄膜のPLD成長と光学特性評価}, booktitle = {}, year = 2011, }