@article{CTT100786664,
  author = {Akira Nakajima and Shunsuke Kubota and Kazuo Tsutsui and Kuniyuki Kakushima and Hitoshi Wakabayashi and Hiroshi Iwai and Shin-ichi Nishizawa and Hiromichi Ohashi},
  title = {GaN-based CMOS Inverter with Normally-off P- and N-channel MOSFETs in GaN/AlGaN/GaN Platform},
  journal = {IET Power Electronics},
  year = 2018,
}

@inproceedings{CTT100830120,
  author = {Akira Nakajima and Shunsuke Kubota and Kazuo Tsutsui and Kuniyuki Kakushima and Hitoshi Wakabayashi and Hiroshi Iwai and Sin-ichi Nishizawa and Hiromichi Ohashi},
  title = {Monolithic Integration of GaN-based Normally-off P- and N-channel MOSFETs},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100830122,
  author = {Shunsuke Kubota and Rei Kayanuma and Akira Nakajima and Shin-ichi Nishizawa and Shin-ichi Nishizawa and Hiromichi Ohashi and Hitoshi Wakabayashi and Kazuo Tsutsui},
  title = {P-Channel AlGaN/GaN MOSFETs for Normally-Off Operation},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100830127,
  author = {A. Nakajima and S. Kubota and R. Kayanuma and K. Tsutsui and K. Kakushima and H. Wakabayashi and H. Iwai and S. Nishizawa and H. Ohashi},
  title = {An overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100830125,
  author = {Akira Nakajima and Shin-Ichi Nishizawa and Hiromichi Ohashi and Rei Kayanuma and Kazuo Tsutsui and Shunsuke Kubota and Kuniyuki Kakushima and Hitoshi Wakabayashi and Hiroshi Iwai},
  title = {GaN-Based Monolithic Power Integrated Circuit Technology with Wide Operating Temperature on Polarization-Junction Platform},
  booktitle = {},
  year = 2015,
}