論文

• Hiroshi Shimomura, Kuniyuki KAKUSHIMA, HIROSHI IWAI. Equivalent Noise Temperature Representation for Scaled MOSFETs, IEICE TRANSACTIONS on Electronics, Vol. E93-C, No. 10, pp. 1550-1552, Oct. 2010.
• Hiroshi Shimomura, Kuniyuki KAKUSHIMA, HIROSHI IWAI. Effect of High Frequency Noise Current Sources on Noise Figure for Sub-50 nm Node MOSFETs, IEICE TRANSACTIONS on Electronics, Vol. E93-C, No. 5, pp. 678-684, May 2010.

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