@article{CTT100916300,
  author = {Wenbo Lin and Shinjiro Iwata and Koichi Fukuda and Yasuyuki Miyamoto},
  title = {Scaling limit for InGaAs/GaAsSb heterojunction double-gate tunnel FETs from the viewpoint of direct band-to-band tunneling from source to drain induced off-characteristics deterioration},
  journal = {Japanese Journal of Applied Physics},
  year = 2016,
}

@article{CTT100738795,
  author = {岩田 真次郎 and 大橋 一水 and 林 文博 and 福田 浩一 and 宮本 恭幸},
  title = {GaAsSb/InGaAsダブルゲートンネルFET におけるソースおよびドレイン不純物濃度依存性},
  journal = {電気学会論文誌C},
  year = 2016,
}

@article{CTT100693011,
  author = {K. Ohashi and M. Fujimatsu and S. Iwata and Y. Miyamoto},
  title = {Body width dependence of subthreshold slope and on-current in GaAsSb/InGaAs double-gate vertical tunnel FETs},
  journal = {Jpn. J. Appl.Phys.},
  year = 2015,
}

@inproceedings{CTT100800886,
  author = {岩田 真次郎 and 大橋 一水 and 祢津 誠晃 and 福田 浩一 and 宮本 恭幸},
  title = {GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおける界面準位の導入による性能の劣化},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100752196,
  author = {木瀬 信和 and 岩田 真次郎 and 青沼 遼介 and 宮本 恭幸},
  title = {[8a-S22-1] 68mV/decのSSをもつGaAsSb/InGaAsダブルゲートトンネルFET},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100752746,
  author = {N. Kise and S. Iwata and R. Aonuma and K. Ohsawa and Y. Miyamoto},
  title = {GaAsSb/InGaAs Double-Gate Vertical Tunnel FET with a Subthreshold Swing of 68mV/dec at Room Temperature},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100738888,
  author = {青沼遼介 and 岩田真次郎 and 木瀬信和 and 宮本恭幸},
  title = {68mV/decのSSを持つGaAsSb/InGaAs縦型ダブルゲートトンネルFET},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100740070,
  author = {岩田 真次郎 and 木瀬 信和 and 青沼 遼介 and 宮本 恭幸},
  title = {[16p-412-5] GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおける不純物濃度調整によるオン電流の向上},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100740962,
  author = {Y. Miyamoto and W. Lin and S.Iwata and K. Fukuda},
  title = {Steep sub-threshold slope in short-channel InGaAs TFET  (Invited)},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100740893,
  author = {林 文博 and 岩田 真次郎 and 福田 浩一 and 宮本 恭幸},
  title = {短チャネルTFET におけるソース-ドレイン間直接トンネリングのオフ電流への寄与},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100717934,
  author = {S. Iwata and W. Lin and K. Fukuda and Y. Miyamoto},
  title = {Design of drain for low off current in GaAsSb/InGaAs tunnel FETs},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100721929,
  author = {Y. Miyamoto and M. Fujimatsu and K. Ohashi and A. Yukimachi and S. Iwata},
  title = {Steep subthreshold slope in InGaAs MOSFET},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100721938,
  author = {Y. Miyamoto and T. Kanazawa and Y. Yonai and K. Ohsawa and Y. Mishima and M. Fujimatsu and K. Ohashi and S. Nestu and S. Iwata},
  title = {InGaAs channel for low supply voltage},
  booktitle = {},
  year = 2015,
}

@inproceedings{CTT100693235,
  author = {岩田真次郎 and 大橋一水 and 宮本恭幸},
  title = {GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおけるI-V特性の不純物濃度依存性},
  booktitle = {},
  year = 2015,
}