@inproceedings{CTT100855945,
  author = {勝俣錬 and 中村玲雄 and 金野達 and 木村彰博 and 大内拓実 and 永友慶 and 田中和也 and 下川裕理 and 小澤健一 and 間瀬一彦 and 小森文夫 and 飯盛拓嗣 and 平山博之 and 中辻寛},
  title = {Si(111)√3×√3-(Bi,In)表面の電子状態},
  booktitle = {},
  year = 2021,
}

@inproceedings{CTT100838612,
  author = {K. Nakatsuji and Y. Shimokawa and T. Fujiwara and K. Nagase and S. Yamazaki and Y. Watanabe and K. Mase and K. Takahashi and H. Hirayama},
  title = {Electronic structure of Bi(110) ultra-thin films grown on a Si(111)√3 x √3-B substrate},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100814303,
  author = {田中和也 and 金野達 and 下川裕理 and 佐藤圭介 and 山崎詩郎 and 飯盛拓嗣 and 小森文夫 and 間瀬一彦 and 平山博之 and 中辻寛},
  title = {Si(111)基板上におけるBi-In表面合金の構造と電子状態},
  booktitle = {},
  year = 2019,
}

@inproceedings{CTT100777455,
  author = {K. Nakatsuji and Y. Shimokawa and T. Fujiwara and K. Nagase and S. Yamazaki and Y. Watanabe and K. Mase and K. Takahashi and H. Hirayama},
  title = {Electronic Structure of Bi(110) Islands Grown on a Si(111)Root3×Root3-B Substrate},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100777464,
  author = {下川裕理 and 田中和也 and 佐藤圭介 and 渡邊瞳 and 山崎詩郎 and 飯盛拓嗣 and 小森文夫 and 間瀬一彦 and 平山博之 and 中辻寛},
  title = {Bi/Si(111)4×1-In表面の構造と電子状態},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100777469,
  author = {Y. Shimokawa and T. Fujiwara and K. Nagase and S. Yamazaki and Y. Watanabe and M. Nakatake and K. Mase and K. Takahashi and K. Nakatsuji and H. Hirayama},
  title = {Electronic structure of Bi(110) ultra-thin films grown on Si(111)Root3×Root3-B surfaces},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100777473,
  author = {下川裕理 and 藤原翼 and 長瀬謙太郎 and 山崎詩郎 and 渡辺義夫 and 仲武昌史 and 間瀬一彦 and 高橋和敏 and 中辻寛 and 平山博之},
  title = {Si(111)√3x√3-B表面上に成長した数層Bi(110)薄膜の電子状態},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100777479,
  author = {藤原翼 and 下川裕理 and 長瀬謙太郎 and 山崎詩郎 and 間瀬一彦 and 渡辺義夫 and 仲武昌史 and 中辻寛 and 平山博之},
  title = {Si(111)√3×√3-B 表面上のBi(110)超薄膜の成長と電子状態},
  booktitle = {},
  year = 2017,
}