@article{CTT100647718,
  author = {Miyuki Kouda and 鈴木 拓也 and Kuniyuki KAKUSHIMA and Ahmet Parhat and HIROSHI IWAI and 安田哲二},
  title = {Electrical Properties of CeO2/La2O3 Stacked Gate Dielectrics Fabricated by Chemical Vapor Deposition and Atomic Layer Deposition},
  journal = {Japanese Journal of Applied Physics},
  year = 2012,
}

@article{CTT100647591,
  author = {マイマイティ マイマイティレャアティ and Miyuki Kouda and Kuniyuki KAKUSHIMA and Hiroshi Nohira and Ahmet Parhat and 片岡好則 and 西山彰 and KAZUO TSUTSUI and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Valance number transition and silicate formation of cerrium oxide on Si(100)},
  journal = {Vacuum},
  year = 2012,
}

@article{CTT100647590,
  author = {マイマイティ マイマイティレャアティ and Miyuki Kouda and Takamasa Kawanago and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 片岡 好則 and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {The effect of remote Coulomb scattering on electron mobility in La2O3 gate stacked MOSFETs},
  journal = {Semiconductor Science and Technology},
  year = 2012,
}

@article{CTT100647426,
  author = {Miyuki Kouda and Takamasa Kawanago and Ahmet Parhat and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Interface and electrical properties of Tm2O3 gate dielectrics for gate oxide scaling in MOS devices},
  journal = {Journal of Vacuum Science and Technology B},
  year = 2011,
}

@article{CTT100647416,
  author = {Miyuki Kouda and Kenji Ozawa and Kuniyuki KAKUSHIMA and Ahmet Parhat and HIROSHI IWAI and ト部友二 and 安田哲二},
  title = {Preparation and Electrical Characterization of CeO2 Films for Gate Dielectrics Application: Comparative Study of Chemical Vapor Deposition and Atomic Layer Deposition Processes},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100647415,
  author = {Miyuki Kouda and Kenji Ozawa and Kuniyuki KAKUSHIMA and Ahmet Parhat and HIROSHI IWAI and ト部友二 and 安田哲二},
  title = {Preparation and Electrical Characterization of CeO2 Films for Gate Dielectrics Application: Comparative Study of Chemical Vapor Deposition and Atomic Layer Deposition Processes},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100647417,
  author = {Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Rare Earth Oxide Capping Effect on La2O3 Gate Dielectrics for Equivalent Oxide Thickness Scaling toward 0.5nm},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100621276,
  author = {K. Shubhakar and K.L. Pey and S.S. Kushvaha and S.J. O'Shea and N. Raghavan and M. Bosman and Miyuki Kouda and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Grain boundary assisted degradation and breakdown study in cerium oxide gate dielectric using scanning tunneling microscopy},
  journal = {Applied Physics Letters},
  year = 2011,
}

@article{CTT100614619,
  author = {Kuniyuki KAKUSHIMA and Koichi Okamoto and Tomotsune Koyanagi and Miyuki Kouda and Kiichi Tachi and Takamasa Kawanago and Jaeyeol Song and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Selection of rare earth silicates for highly scaled gate dielectrics},
  journal = {Microelectronic Engineering},
  year = 2010,
}

@article{CTT100604483,
  author = {Kuniyuki KAKUSHIMA and Koichi Okamoto and Tomotsune Koyanagi and Miyuki Kouda and Kiichi Tachi and Takamasa Kawanago and Jaeyeol Song and Ahmet Parhat and Hiroshi Nohira and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {SrO capping effect for La2O3/ Ce-Silicate gate dielectrics},
  journal = {Microelectronics Reliability 50},
  year = 2010,
}

@inproceedings{CTT100654663,
  author = {Tasuku Kaneda and Miyuki Kouda and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Influence of Flash Lamp Annealing on Electrical Characteristics of MOS Device with Si/ La2O3/n-Si Structure},
  booktitle = {ECS Transactions},
  year = 2013,
}

@inproceedings{CTT100654578,
  author = {Takuya Suzuki and Miyuki Kouda and Kuniyuki KAKUSHIMA and パールハットアヘメト and HIROSHI IWAI and 安田哲二},
  title = {Formation and electrical characterization of MgO - incorporated La2O3 gate insulators by ALD},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100654591,
  author = {Kana Tsuneishi and Miyuki Kouda and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical properties of Tm2O3 gate dielectric and its scaling issues},
  booktitle = {},
  year = 2013,
}

@inproceedings{CTT100657191,
  author = {Miyuki Kouda and 鈴木 拓也 and Kuniyuki KAKUSHIMA and パールハットアヘメト and HIROSHI IWAI},
  title = {Stack structures of ALD- La2O3 and CVD-CeO2 : fabrication and mobility improvement effects},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657248,
  author = {Kana Tsuneishi and Miyuki Kouda and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical properties of Tm2O3 gate dielectric and its scaling issues},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657249,
  author = {Kana Tsuneishi and Miyuki Kouda and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical properties of Tm2O3 gate dielectric and its scaling issues},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657213,
  author = {鈴木 拓也 and Miyuki Kouda and Kuniyuki KAKUSHIMA and パールハットアヘメト and HIROSHI IWAI and 安田哲二},
  title = {Formation and electrical characterization of MgO - incorporated La2O3 gate insulators by ALD},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100657190,
  author = {Miyuki Kouda and Kuniyuki KAKUSHIMA and パールハットアヘメト and HIROSHI IWAI and 安田哲二},
  title = {Comparative study of CeO2 gate dielectrics using chemical vapor deposition and atomic layer deposition},
  booktitle = {},
  year = 2012,
}

@inproceedings{CTT100654662,
  author = {Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical Properties of Rare-Earth oxides and La2O3 Stacked Gate Dielectrics},
  booktitle = {ECS Transactions},
  year = 2011,
}

@inproceedings{CTT100654666,
  author = {Miyuki Kouda and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI},
  title = {Electrical Properties of Rare-Earth oxides and La2O3 Stacked Gate Dielectrics},
  booktitle = {ECS Transactions},
  year = 2011,
}

@inproceedings{CTT100631047,
  author = {小澤健児 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 岩井洋 and ト部友二 and 安田哲二},
  title = {La2O3 のALD成長のための原料選択：シクロペンタジエニル錯体とアミディネート錯体の比較},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100628208,
  author = {常石佳奈 and 来山大祐 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {W/Tm2O３/n-Si構造キャパシタの電気特性におけるTm2O３膜厚依存性},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622594,
  author = {Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Preparation and electrical characterization of CeO2 films for gate dielectrics application: comparative study of CVD and ALD processes},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100627782,
  author = {鈴木 拓也 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 岩井洋 and 安田哲二},
  title = {ALDによるMgO添加La2O3ゲート絶縁膜の形成及び電気特性評価},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100623983,
  author = {Ahmet Parhat and 来山大祐 and 金田翼 and 鈴木 拓也 and Tomotsune Koyanagi and Miyuki Kouda and マイマイティ マイマイティレャアティ and Takamasa Kawanago and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Effects of Metal Layer Insertion on EOT scaling in TiN/Metal/ La2O3 Si High –k Gate Stacks},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100623969,
  author = {Ahmet Parhat and 来山大祐 and 金田翼 and 鈴木 拓也 and Tomotsune Koyanagi and Miyuki Kouda and マイマイティ マイマイティレャアティ and Takamasa Kawanago and Kuniyuki KAKUSHIMA and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {TiN/W/La2O3 /Si High-k Gate Stack for EOT below o.5nm},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622703,
  author = {金田翼 and Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Effect of rare earth oxide capping for La-based gate oxides},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622593,
  author = {Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Rare earth oxide capping effect on La2O3 gate dielectrics toward EOT of 0.5nm},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100615539,
  author = {Kenji Ozawa and Miyuki Kouda and Y. Urabe and T. Yasuda and Kuniyuki KAKUSHIMA and Ahmet Parhat and HIROSHI IWAI},
  title = {La2O3  insulators prepared by ALD using La(iPrCp)3 source: self-limiting growth conditions and electrical properties},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100615536,
  author = {Ahmet Parhat and 来山大祐 and 金田 翼 and 鈴木  拓也 and Tomotsune Koyanagi and Miyuki Kouda and M. Mamatrishat and Takamasa Kawanago and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Scaling of EOT Beyond 0.5nm},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613731,
  author = {M. Mamatrishat and Miyuki Kouda and Takamasa Kawanago and Kuniyuki KAKUSHIMA and Ahmet Parhat and A. Aierken and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and HIROSHI IWAI},
  title = {Effect of Remote-Surface –Roughness Scattering on Electron Mobility in MOSFETs with High-k Dielectrics},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616048,
  author = {幸田みゆき and 小澤健児 and 角嶋邦之 and パールハットアヘメト and 岩井洋 and ト部 友二 and 安田 哲二},
  title = {CVD法によるCeOx絶縁膜の作製と特性評価},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616050,
  author = {金田翼 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Tm-oxide/La2O3構造ゲート絶縁膜の界面特性評価},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100616049,
  author = {小澤健児 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 岩井洋 and ト部友二 and 安田哲二},
  title = {La(iPrCp)3 を原料としたLa2O3のALD: Self-limiting 成長条件の明確化},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100613529,
  author = {角嶋邦之 and 小柳友常 and 来山大祐 and 幸田みゆき and 宋在烈 and 佐藤創志 and 川那子高暢 and M. マイマイティ and 舘喜一 and M.K. Bera and パールハットアヘメト and 野平博司 and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 山田啓作 and 岩井洋},
  title = {LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御},
  booktitle = {，野平博司，筒井一生，西山彰，杉井信之，名取研二，服部健雄，山田啓作，岩井洋“LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御” 応用物理学会分科会 シリコンテクノロジー No.127 pp.4-8（2010年7月22日 ）},
  year = 2010,
}

@inproceedings{CTT100607843,
  author = {Kuniyuki KAKUSHIMA and Tomotsune Koyanagi and 来山大祐 and Miyuki Kouda and Jaeyeol Song and Takamasa Kawanago and M. Mamatrishat and Kiichi Tachi and M. K. Bera and Ahmet Parhat and Hiroshi Nohira and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and Keisaku Yamada and HIROSHI IWAI},
  title = {Direct Contact of High-k/Si Gate Stack for EOT below 0.7 nm using LaCe-silicate Layer with Vfb controllability},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100603759,
  author = {小澤健児 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {La2O3 MOSFETへのCeOxキャップによる電気特性の改善},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100603760,
  author = {幸田みゆき and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {希土類酸化物をキャップすることによるMOSFETの電気特性の改善},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100603743,
  author = {Katuya Matano and Kiyohisa Funamizu and Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Electrical Characteristics of Rare Earth (La, Ce, Pr and Tm) Oxides/Silicates Gate Dielectric},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630992,
  author = {金田翼 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Effect of Rare Earth Oxide Capping for La-based Gate Oxides},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100630998,
  author = {幸田みゆき and 小澤健児 and 角嶋邦之 and パールハットアヘメト and 岩井洋 and ト部友二 and 安田哲二},
  title = {Electrical characterization of CVD deposited Ce oxides},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100631000,
  author = {小澤健児 and 幸田みゆき and 角嶋邦之 and パールハットアヘメト and 岩井洋 and ト部友二 and 安田哲二},
  title = {Self-limited growth of La oxides with ALD},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100597770,
  author = {Hiroshi Nohira and Yoichiro Kon and Koji Kitamura and Miyuki Kouda and Kuniyuki KAKUSHIMA and HIROSHI IWAI},
  title = {Annealing-temperature Dependence of Compositional Depth Profiles and Chemical Bonding States of CeOx / LaOx/Si and LaOx/CeOx /Si Structure},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597922,
  author = {Miyuki Kouda and Naoto Umezawa and Kuniyuki KAKUSHIMA and Hiroshi Nohira and Ahmet Parhat and Kenji Shiraishi and 知京豊裕 and Keisaku Yamada and HIROSHI IWAI},
  title = {Charged defects reduction in gate insulator with multivalent materials},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597917,
  author = {M.Mamatrishat and Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Study on Remote Coulomb Scattering Limited Mobility in MOSFETs with CeO2/ La2O3 Gate Stacks},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597756,
  author = {Kuniyuki KAKUSHIMA and Koichi Okamoto and Tomotsune Koyanagi and Kiichi Tachi and Miyuki Kouda and Takamasa Kawanago and Jaeyeol Song and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and takeo hattori and HIROSHI IWAI},
  title = {Selection of Rare Earth Silicate with SrO Capping for EOT Scaling below o.5 nm},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100597760,
  author = {M.Mamatrishat and Miyuki Kouda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Analysis of Remote Coulomb Scattering Limited Mobility in MOSFETs with CeO2/La2O3 Gate Stacks},
  booktitle = {},
  year = 2009,
}

@inproceedings{CTT100585083,
  author = {Miyuki Kouda and Kuniyuki KAKUSHIMA and Naoto Umezawa and Ahmet Parhat and Kenji Shiraishi and Toyohiro Chikyow and Keisaku Yamada and HIROSHI IWAI},
  title = {Charged defects reduction in gate insulator with multivalent materials},
  booktitle = {2009 Symposium on VLSI Technology Digest of Technical Papers},
  year = 2009,
}

@inproceedings{CTT100585303,
  author = {野平博司 and 今陽一郎 and 北村幸司 and 幸田みゆき and 角嶋邦之 and 岩井 洋},
  title = {CeO2 /La2O3/Si(100)構造の熱安定性(2)},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585313,
  author = {幸田みゆき and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {CeO2 /La2O3積層ゲート絶縁膜のリーク電流特性の膜厚依存性},
  booktitle = {第56回応用物理学関係連合講演会予稿集},
  year = 2009,
}

@inproceedings{CTT100585128,
  author = {幸田みゆき and 梅澤直人 and 角嶋邦之 and パールハットアヘメト and 白石賢二 and 知京豊裕 and 山田啓作 and 岩井洋 and 服部健雄},
  title = {低電子揺動Ce酸化物を利用したhigh－k膜中の固定電荷の抑制},
  booktitle = {ゲートスタック研究会－材料･プロセス・評価の物理－（第14回研究会）},
  year = 2009,
}

@inproceedings{CTT100830627,
  author = {M. Kouda and K. Tachi and K. Kakushima and P. Ahmet and K. Tsutsui and N. Sugii and A. Chandorkar and T. Hattori and H. Iwai},
  title = {Electric Properties of CeOX /La2O3 Stack as Gate Dielectric in Advanced MOSFET Technology},
  booktitle = {},
  year = 2008,
}

@inproceedings{CTT100585097,
  author = {野平博司 and 今 陽一郎 and 北村幸司 and 幸田みゆき and 角嶋邦之 and 岩井洋},
  title = {CeO2/La2O3/Si(100)構造の熱安定性},
  booktitle = {秋季第69回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100585094,
  author = {船水清永 and 幸田みゆき and 舘喜一 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {CeOX/La2O3積層ゲート絶縁膜構造の膜特性評価},
  booktitle = {秋季第69回応用物理学会学術講演会予稿集},
  year = 2008,
}

@inproceedings{CTT100576382,
  author = {幸田みゆき and 舘喜一 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 杉井信之 and 服部健雄 and 岩井洋},
  title = {CeO2/La2O3積層ゲート絶縁膜の電気特性評価},
  booktitle = {春季第55回応用物理学会学術講演会予稿集},
  year = 2008,
}