@article{CTT100658723, author = {DARYOUSH ZADEH and Hiroshi Oomine and Yuya Suzuki and Kuniyuki KAKUSHIMA and パールハットアヘメト and Hiroshi Nohira and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI}, title = {La2O3/Ino.53Ga.0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate alectrode}, journal = {Solid-State Electronics}, year = 2013, } @inproceedings{CTT100658331, author = {Yuya Suzuki and ダリューシュザデ and Hiroshi Oomine and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI}, title = {Interface Engineering of La2O3/InGaAs Capacitors with High Temperature Stability}, booktitle = {}, year = 2013, } @inproceedings{CTT100658363, author = {Hiroshi Oomine and ダリューシュザデ and Yuya Suzuki and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI}, title = {La-Oxide Gate Dielectrics for InGaAs Substrates formed by Chemical Vapor Deposition}, booktitle = {}, year = 2013, } @inproceedings{CTT100658364, author = {Hiroshi Oomine and ダリューシュザデ and Yuya Suzuki and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI}, title = {La-Oxide Gate Dielectrics for InGaAs Substrates formed by Chemical Vapor Deposition}, booktitle = {}, year = 2013, } @inproceedings{CTT100654582, author = {Ryuji Hosoi and Yuya Suzuki and ダリューシュザデ and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and 杉井信之 and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI}, title = {A novel interpretation of frequency dispersed capacitances in InGaAs capacitor by conductance method}, booktitle = {}, year = 2013, } @inproceedings{CTT100654680, author = {Yuya Suzuki and ダリューシュザデ and Ryuji Hosoi and Kuniyuki KAKUSHIMA and パールハットアヘメト and KAZUO TSUTSUI and Akira Nishiyama and Nobuyuki Sugii and Kenji Natori and takeo hattori and HIROSHI IWAI}, title = {Electrical characteristics of La2O3/In0.53Ga0.47AAs capacitors with surface nitridation}, booktitle = {}, year = 2013, } @inproceedings{CTT100654572, author = {DARYOUSH ZADEH and Yuya Suzuki and Kuniyuki KAKUSHIMA and パールハットアヘメト and 西山彰 and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI}, title = {Characterization of metal Schottky junction for InGaAs substrate}, booktitle = {}, year = 2013, } @inproceedings{CTT100831028, author = {DARYOUSH ZADEH and Hiroshi Oomine and Yuya Suzuki and Kuniyuki KAKUSHIMA and Hiroshi Nohira and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI}, title = {La2O3/Ino.53Ga.0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate alectrode}, booktitle = {}, year = 2013, } @inproceedings{CTT100657357, author = {Ryuji Hosoi and Yuya Suzuki and DARYOUSH ZADEH and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI}, title = {Characterization of matal Schottky junction for In0.53Ga0.47AAs substrates}, booktitle = {}, year = 2012, } @inproceedings{CTT100657193, author = {DARYOUSH ZADEH and Ryuji Hosoi and Yuya Suzuki and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI}, title = {Electrical Characterization and improvement of high-k/InGaAs devices}, booktitle = {}, year = 2012, } @inproceedings{CTT100657212, author = {Ryuji Hosoi and Yuya Suzuki and DARYOUSH ZADEH and Kuniyuki KAKUSHIMA and パールハットアヘメト and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI}, title = {A novel interpretation of frequency dispersed capacitances in InGaAs capacitor by conductance method}, booktitle = {}, year = 2012, } @inproceedings{CTT100657348, author = {Kuniyuki KAKUSHIMA and Yuya Suzuki and ダリューシュザデ and Takamasa Kawanago and HIROSHI IWAI}, title = {Development of Core Technologies for Green Nanoelectronics}, booktitle = {}, year = 2012, } @inproceedings{CTT100657638, author = {Yuya Suzuki and ダリューシュザデ and Kuniyuki KAKUSHIMA and パールハットアヘメト and 片岡好則 and Akira Nishiyama and Nobuyuki Sugii and KAZUO TSUTSUI and Kenji Natori and takeo hattori and HIROSHI IWAI}, title = {Effect of In0.53Ga0.47AAs surface nitridation on electrical characteristics of high-k/capacitors}, booktitle = {ECS Transactions}, year = 2012, } @inproceedings{CTT100628214, author = {鈴木佑哉 and 細井隆司 and ダリューシュザデ and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋}, title = {high-k/In0.53Ga0.47As MOS キャパシタの容量-電圧特性の解析}, booktitle = {}, year = 2011, }