@article{CTT100800921,
  author = {Y. Miyamoto and T. Kanazawa and N. Kise and H. Kinoshita and K. Ohsawa},
  title = {Regrown Source/Drain in InGaAs Multi-Gate MOSFETs},
  journal = {J. Crystal Growth},
  year = 2019,
}

@article{CTT100800893,
  author = {R. Aonuma and N. Kise and Y. Miyamoto},
  title = {GaAsSb/InGaAs double-gate vertical tunnel FET with a subthreshold slope of 56 mV/dec at room temperature},
  journal = {Jpn. J. Appl. Phys.},
  year = 2019,
}

@article{CTT100738837,
  author = {K. Ohsawa and S. Netsu and N. Kise and S. Noguchi and Y. Miyamoto},
  title = {Dependence of electron mobility on gate voltage sweeping width and deposition temperature in MOSFETs with HfO2/Al2O3/InGaAs gate stacks},
  journal = {Jpn. J. Appl. Phys.},
  year = 2017,
}

@article{CTT100735791,
  author = {Nobukazu Kise and Haruki Kinoshita and Atsushi Yukimachi and Toru Kanazawa and Yasuyuki Miyamoto},
  title = {Fin width dependence on gate controllability of InGaAs channel FinFETs with regrown source/drain},
  journal = {Solid-State Electronics},
  year = 2016,
}

@inproceedings{CTT100800934,
  author = {Y. Miyamoto and N. Kise and R. Aonuma},
  title = {GaAsSb/InGaAs double gate tunnel FET operating below 60 mv/decade and temperature dependence of band-edge decay parameters},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800851,
  author = {青沼 遼介 and 木瀬 信和 and 宮本 恭幸},
  title = {Al2O3/ZrO2ゲート絶縁膜を使用したことによるGaAsSb/InGaAsダブルゲートトンネルFETの性能改善},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800928,
  author = {R. Aonuma and N. Kise and Y. Miyamoto},
  title = {Improvement in GaAsSb/InGaAs double-gate tunnel FET using thermal evaporation for gate electrode and Al2O3/ZrO2 for gate insulator},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800923,
  author = {Y.Miyamoto and T. Kanazawa and N. Kise and H. Kinoshita and Kazuto Ohsawa},
  title = {Regrown Source / Drain in InGaAs Multi-Gate MOSFET},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100768825,
  author = {Toru Kanazawa and Kazuto Ohsawa and Tomohiro Amemiya and Nobukazu Kise and Ryosuke Aonuma and Yasuyuki Miyamoto},
  title = {Fabrication of InGaAs Nanosheet Transistors with Regrown Source},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100800884,
  author = {木瀬 信和 and 青沼 遼介 and 宮本 恭幸},
  title = {GaAsSb/InGaAsダブルゲートトンネルFETにおけるゲート金属形成プロセスの影響},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100759540,
  author = {金澤 徹 and 大澤 一斗 and 雨宮 智宏 and 木瀬 信和 and 青沼 遼介 and 宮本 恭幸},
  title = {InGaAsナノシートトランジスタの作製},
  booktitle = {},
  year = 2018,
}

@inproceedings{CTT100747615,
  author = {⼤澤 ⼀⽃ and ⾦澤 徹 and ⽊瀬 信和 and ⾬宮 智宏 and 宮本 恭幸},
  title = {InGaAsナノシートチャネルを持つマルチゲートMOSFETに向けた作製プロセス開発},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100752196,
  author = {木瀬 信和 and 岩田 真次郎 and 青沼 遼介 and 宮本 恭幸},
  title = {[8a-S22-1] 68mV/decのSSをもつGaAsSb/InGaAsダブルゲートトンネルFET},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100752746,
  author = {N. Kise and S. Iwata and R. Aonuma and K. Ohsawa and Y. Miyamoto},
  title = {GaAsSb/InGaAs Double-Gate Vertical Tunnel FET with a Subthreshold Swing of 68mV/dec at Room Temperature},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100740854,
  author = {大澤 一斗 and 野口 真司 and 祢津 誠晃 and 木瀬 信和 and 宮本 恭幸},
  title = {[16p-413-11] HfO2/Al2O3/InGaAsゲート構造をもつMOSFETの移動度のH2アニール後における成膜温度およびAl2O3膜厚依存性},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100740070,
  author = {岩田 真次郎 and 木瀬 信和 and 青沼 遼介 and 宮本 恭幸},
  title = {[16p-412-5] GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおける不純物濃度調整によるオン電流の向上},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100738888,
  author = {青沼遼介 and 岩田真次郎 and 木瀬信和 and 宮本恭幸},
  title = {68mV/decのSSを持つGaAsSb/InGaAs縦型ダブルゲートトンネルFET},
  booktitle = {},
  year = 2017,
}

@inproceedings{CTT100740944,
  author = {大澤一斗 and 野口真司 and 祢津誠晃 and 木瀬信和 and 宮本恭幸},
  title = {HfO2/Al2O3/InGaAsゲート構造における移動度への成膜温度およびH2アニールの影響},
  booktitle = {信学技報},
  year = 2017,
}

@inproceedings{CTT100740976,
  author = {K. Ohsawa and N. Kise and Y. Miyamoto},
  title = {Deposition Temperature and Al2O3 Thickness Dependence on the Mobility of HfO2/Al2O3/InGaAs Gate Stacks},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100740907,
  author = {大澤 一斗 and 木瀬 信和 and 宮本 恭幸},
  title = {15p-B9-10 HfO2/Al2O3/InGaAsゲート構造における移動度の成膜温度およびAl2O3膜厚依存性},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100725185,
  author = {Haruki Kinoshita and Nobukazu Kise and Atsushi Yukimachi and Toru Kanazawa and Yasuyuki Miyamoto},
  title = {Operation of 16-nm InGaAs channel multi-gate MOSFETs with regrown source/drain},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100725184,
  author = {木下 治紀 and 木瀬 信和 and 祢津 誠晃 and 金澤 徹 and 宮本 恭幸},
  title = {再成長S/Dを有するInGaAsマルチゲートMOSFETのLch=16nm動作},
  booktitle = {},
  year = 2016,
}

@inproceedings{CTT100740895,
  author = {木下 治紀 and 木瀬 信和 and 祢津 誠晃 and 金澤 徹 and 宮本 恭幸},
  title = {[22p-W541-5] 再成長S/Dを有するInGaAsマルチゲートMOSFETのLch=16nm動作},
  booktitle = {},
  year = 2016,
}