@article{CTT100848807,
author = {Ryo Wakabayashi and Kohei Yoshimatsu and Mai Hattori and Jung-Soo Lee and Osami Sakata and Akira Ohtomo},
title = {Epitaxial Stabilization of Complete Solid-solution β-(AlxGa1–x)2O3 (100) Films by Pulsed-laser Deposition},
journal = {Cryst. Growth Des.},
year = 2021,
}
@article{CTT100768556,
author = {Ryo Wakabayashi and Mai Hattori and Kohei Yoshimatsu and Koji Horiba and Hiroshi Kumigashira and Akira Ohtomo},
title = {Band alignment at β-(AlxGa1-x)2O3/β-Ga2O3 (100) interface fabricated},
journal = {Applied Physics Letters},
year = 2018,
}
@article{CTT100754352,
author = {Ryo Wakabayashi and K. Yoshimatsu and Mai Hattori and A. Ohtomo},
title = {Epitaxial structure and electronic property of β-Ga2O3 films grown on MgO (100) substrates by pulsed-laser deposition},
journal = {Applied Physics Letters},
year = 2017,
}
@article{CTT100738894,
author = {T. Oshima and R. Wakabayashi and M. Hattori and Akihiro Hashiguchi and Naoto Kawano and K. Sasaki and T. Masui and A. Kuramata and S. Yamakoshi and K. Yoshimatsu and A. Ohtomo and Toshiyuki Oishi and Makoto Kasu},
title = {Formation of indium–tin oxide ohmic contacts for β-Ga2O3},
journal = {Japanese Journal of Applied Physics},
year = 2016,
}
@article{CTT100727003,
author = {Mai Hattori and Takayoshi OSHIMA and Ryo Wakabayashi and K. Yoshimatsu and Kohei Sasaki and Takekazu Masui and Akito Kuramata and Shigenobu Yamakoshi and Koji Horiba and Hiroshi Kumigashira and A. Ohtomo},
title = {Epitaxial growth and electric properties of γ-Al2O3 (110) films on β- Ga2O3 (010) substrates},
journal = {Japanese Journal of Applied Physics},
year = 2016,
}
@article{CTT100690808,
author = {R. Wakabayashi and T. Oshima and M. Hattori and T. Masui and A. Kuramata and S. Yamakoshi and K. Yoshimatsu and A. Ohtomo},
title = {Oxygen-radical-assisted pulsed-laser deposition of β-Ga2O3 and β-(AlxGa1−x)2O3 films},
journal = {Journal of Crystal Growth},
year = 2015,
}
@inproceedings{CTT100767001,
author = {服部真依 and 若林諒 and 佐々木公平 and 増井建和 and 倉又朗人 and 山腰茂伸 and 堀場弘司 and 組頭広志 and 吉松公平 and 大友明},
title = {β-Ga203(100)上に成長したβ-(AlxGal-x)203薄膜のバンドギャップ評価},
booktitle = {},
year = 2018,
}
@inproceedings{CTT100753353,
author = {R. Wakabayashi and M. Hattori and K. Yoshimatsu and Koji Horiba and Hiroshi Kumigashira and A. Ohtomo},
title = {Growth of β-Ga2O3 -based heterostructures by pulsed-laser deposition},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100751825,
author = {若林諒 and 服部真依 and 吉松 公平 and 大友 明},
title = {全Al組成β -(Alx Ga1-x )2O3 (0 ≤ x ≤ 1)薄膜のエピタキシャル成⻑},
booktitle = {},
year = 2017,
}
@inproceedings{CTT100715575,
author = {今別府秀行 and 大島孝仁 and 服部真依 and 中谷 道人 and 須山 敏尚 and 吉松 公平 and 大友 明},
title = {立方晶Mgx Zn1−x O 混晶薄膜および超格子構造の深紫外CL 発光特性},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100719033,
author = {T. Oshima and R. Wakabayashi and M. Hattori and Akihiro Hashiguchi and Naoto Kawano and K. Sasaki and T. Masui and A. Kuramata and S. Yamakoshi and K. Yoshimatsu and A. Ohtomo and Toshiyuki Oishi and Makoto Kasu},
title = {ITO ohmic contacts for β-Ga2O3},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100715619,
author = {大島孝仁 and 若林諒 and 服部真依 and 橋口 明広 and 河野 直士 and 佐々木 公平 and 増井 建和 and 倉又 朗人 and 山腰 茂伸 and 吉松 公平 and 大友 明},
title = {β-Ga2O3用ITOオーミック電極},
booktitle = {},
year = 2016,
}
@inproceedings{CTT100698689,
author = {M. Hattori and R. Wakabayashi and T. Oshima and K. Sasaki and T. Masui and A. Kuramata and S. Yamakoshi and K. Yoshimatsu and A. Ohtomo},
title = {Evaluation of Band Offset at β-(AlxGa1-x)2O3/β-Ga2O3 Heterointerface},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100698656,
author = {R. Wakabayashi and T. Oshima and M. Hattori and K. Sasaki and T. Masui and A. Kuramata and S. Yamakoshi and K. Yoshimatsu and A. Ohtomo},
title = {Growth and Electric Properties of Conductive β-(AlxGa1-x)2O3 Films},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100698657,
author = {R. Wakabayashi and T. Oshima and M. Hattori and K. Sasaki and T. Masui and A. Kuramata and S. Yamakoshi and K. Yoshimatsu and A. Ohtomo},
title = {Strong Fermi-Level Pinning at Metal/β-Ga2O3 (̅201) Interface},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100698688,
author = {M. Hattori and T. Oshima and R. Wakabayashi and K. Sasaki and T. Masui and A. Kuramata and S. Yamakoshi and K. Yoshimatsu and A. Ohtomo},
title = {Epitaxial Relationship and Capacitance-Voltage Characteristicsof γ-Al2O3 Films Grown on (010) β-Ga2O3 Substrates},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100696498,
author = {服部 真依 and 大島 孝仁 and 若林 諒 and 佐々木 公平 and 増井 建和 and 倉又 朗人 and 山腰 茂伸 and 吉松 公平 and 大友 明},
title = {β-Ga2O3上γ-Al2O3膜のエピタキシャル構造と容量電圧特性評価},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100696497,
author = {若林 諒 and 大島 孝仁 and 服部 真依 and 佐々木 公平 and 増井 建和 and 倉又 朗人 and 山腰 茂伸 and 吉松 公平 and 大友 明},
title = {金属/β-Ga2O3 (̅201)界面における強いフェルミ準位ピンニング効果},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100693226,
author = {若林 諒 and 大島 孝仁 and 服部 真依 and 佐々木 公平 and 増井 建和 and 倉又 朗人 and 山腰 茂伸 and 吉松 公平 and 大友 明},
title = {酸素ラジカル支援パルスレーザ堆積法による酸化ガリウム系混晶薄膜の成長},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100693223,
author = {大島 孝仁 and 服部 真依 and 若林 諒 and 佐々木 公平 and 増井 建和 and 倉又 朗人 and 山腰 茂伸 and 堀場 弘司 and 組頭 広志 and 吉松 公平 and 大友 明},
title = {β-(AlxGa1-x)2O3/β-Ga2O3ヘテロ接合におけるタイプI型バンドラインナップ},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100685941,
author = {若林 諒 and 服部 真依 and 大島 孝仁 and 佐々木 公平 and 増井 建和 and 倉又 朗人 and 山腰 茂伸 and 吉松 公平 and 大友 明},
title = {酸素ラジカル支援PLD法による酸化ガリウム系混晶薄膜の成長},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100685942,
author = {服部 真依 and 若林 諒 and 大島 孝仁 and 佐々木 公平 and 増井 建和 and 倉又 朗人 and 山腰 茂伸 and 堀場 弘司 and 組頭 広志 and 吉松 公平 and 大友 明},
title = {β-(AlxGa1-x)2O3/β-Ga2O3/ヘテロ接合のバンドオフセット評価},
booktitle = {},
year = 2015,
}
@inproceedings{CTT100680941,
author = {R. Wakabayashi and M. Hattori and T. Oshima and A. Mukai and K. Sasaki and T. Masui and A. Kuramata and S. Yamakoshi and K. Yoshimatsu and A. Ohtomo},
title = {Oxygen-radical-assisted pulsed-laser deposition of β-(AlxGa1-x)2O3 alloy films},
booktitle = {},
year = 2014,
}