@article{CTT100647421,
  author = {ダリューシュザデ and Takashi Kanda and 山下晃司 and Kuniyuki KAKUSHIMA and Hiroshi Nohira and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Capacitance-Voltage Characterization of La2O3 Metal-Oxide-Semiconductor Structures on Ino.53Ga.0.47As Substrate with Different Surface Treatment Methods},
  journal = {Japanese Journal of Applied Physics},
  year = 2011,
}

@article{CTT100626838,
  author = {ダリューシュザデ and Kuniyuki KAKUSHIMA and Takashi Kanda and Y.C.Lin and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and E.Y.Chang and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Improving electrical characteristics of W/HfO2/Ino.53Gao.47As gate stacks by altering deposition techniques},
  journal = {Microelectronic Engineering},
  year = 2011,
}

@inproceedings{CTT100622711,
  author = {Takashi Kanda and ダリューシュザデ and Y. C. Lin and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and E.Y. Chang and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Annealing Effect on the Electrical Properties of La2O3/InGaAs MOS Capacitors},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100622598,
  author = {ダリューシュザデ and Takashi Kanda and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Effects of In0.53Ga0.47As Surface Preparation on MOS Device Electrical Characterization},
  booktitle = {},
  year = 2011,
}

@inproceedings{CTT100616054,
  author = {細井隆司 and 神田高志 and ダリューシュザデ and Yueh Chin Lin and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and Edward Yi Chang and 名取研二 and 服部健雄 and 岩井洋},
  title = {絶縁膜材料を用いたIn0.53Ga0.47As MOSキャパシタの電気特性},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100603765,
  author = {神田高志 and 船水清永 and Yueh Chin Lin and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and Edward Yi Chang and 名取研二 and 服部健雄 and 岩井洋},
  title = {HfO2/ La2O3/ In0.53 Ga0.47As構造の界面特性の変化},
  booktitle = {第57回応用物理学関係連合講演会講演予稿集},
  year = 2010,
}

@inproceedings{CTT100631002,
  author = {ダリューシュザデ and 神田高志 and 細井隆司 and 角嶋邦之 and パールハットアヘメト and 筒井一生 and 西山彰 and 杉井信之 and 名取研二 and 服部健雄 and 岩井洋},
  title = {Towards High Performance III-V MOSFET, A Study on high-k Gate Stacks on In0.53Ga0.47As},
  booktitle = {},
  year = 2010,
}

@inproceedings{CTT100597929,
  author = {Kiyohisa Funamizu and Takashi Kanda and Y.C.Lin and Kuniyuki KAKUSHIMA and Ahmet Parhat and KAZUO TSUTSUI and 西山彰 and Nobuyuki Sugii and E.Y.Chang and KENJI NATORI and takeo hattori and HIROSHI IWAI},
  title = {Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure},
  booktitle = {},
  year = 2009,
}