@inproceedings{CTT100673093,
  author = {雷 一鳴 and Shu Munekiyo and Kuniyuki KAKUSHIMA and Takamasa Kawanago and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and KAZUO TSUTSUI and Kenji Natori and HIROSHI IWAI and M. Furuhashi and N. Miura and S. Yamakawa},
  title = {Interface reaction analysis of La2O3/SiC upon annealing by ATR-FTIR},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100673478,
  author = {宗清修 and 岩井洋},
  title = {La-silicate界面層を用いたSiC-MOSキャパシタの容量電圧特性の評価},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100674010,
  author = {雷 一鳴 and 宗清修 and 角嶋邦之 and 川那子高暢 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋 and 古橋 壮之 and 三浦 成久 and 山川 聡},
  title = {ATR-FTIR法を用いた熱処理によるLa2O3/SiC界面反応の解析},
  booktitle = {},
  year = 2014,
}

@inproceedings{CTT100661680,
  author = {宗清修 and 川那子高暢 and 角嶋邦之 and 片岡好則 and 西山彰 and 杉井信之 and 若林整 and 筒井一生 and 名取研二 and 岩井洋},
  title = {ショットキーゲート材料によるAlGaN/GaNの容量電圧特性への影響},
  booktitle = {},
  year = 2013,
}

@misc{CTT100710318,
  author = {角嶋邦之 and 川那子高暢 and 宗清修 and LEIYIMING and 古橋　壮之 and 三浦　成久},
  title = {半導体装置及びその製造方法},
  howpublished = {登録特許},
  year = 2018,
  month  = {},
  note   = {特願2014-173714(2014/08/28), 特開2016-048758(2016/04/07), 特許第6270667号(2018/01/12)}
}