論文

• Toru Kanazawa, Tomohiro Amemiya, Vikrant Upadhyaya, Atsushi Ishikawa, Kenji Tsuruta, Takuo Tanaka, Yasuyuki Miyamoto. Performance Improvement of HfS2 Transistors by Atomic Layer Deposition of HfO2, IEEE Transactions on Nanotechnology, Vol. 16, No. 4, pp. 582-587, July 2017.
• Vikrant UPADHYAYA, Toru KANAZAWA, Yasuyuki MIYAMOTO. Vacuum Annealing and Passivation of HfS2 FET for Mitigation of Atmospheric Degradation, IEICE Transactions on Electronics, Vol. E100-C, No. 5, pp. 453-457, May 2017.  公式リンク  
  
• Toru Kanazawa, Tomohiro Amemiya, Atsushi Ishikawa, Vikrant Upadhyaya, Kenji Tsuruta, Takuo Tanaka, Yasuyuki Miyamoto. Few Layer HfS2 FET, Scientific Reports, Vol. 6, pp. 22277, Mar. 2016.  公式リンク  
  

国際会議発表 (査読有り)

• Seiko Netsu, Toru Kanazawa, Vikrant Upadhyaya, Teerayut Uwanno, Tomohiro Amemiya, Kosuke Nagashio, Yasuyuki Miyamoto. Type II HfS2/MoS2 heterojunction Tunnel FET, 12th Topical Workshop on Heterostructure Microelectronics (TWHM 2017), No. 6-3, Aug. 2017.
• Toru Kanazawa, Tomohiro Amemiya, Vikrant Upadhyaya, Atsushi Ishikawa, Kenji Tsuruta, Takuo Tanaka, Yasuyuki Miyamoto. Effect of the HfO2 passivation on HfS2 Transistors, 16th International Conference on Nanotechnology (IEEE NANO 2016), No. ThAM11.3, Aug. 2016.
• Vikrant Upadhyaya, Toru Kanazawa, YASUYUKI MIYAMOTO. Vacuum annealing and passivation of Hf₂ FET for mitigation of atmospheric degradation, 2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2016), A5-7, pp. 231-235, July 2016.
• Toru Kanazawa, Tomohiro Amemiya, Atsushi Ishikawa, Vikrant Upadhyaya, Takuo Tanaka, Kenji Tsuruta, Yasuyuki Miyamoto. HfS2 Electric Double Layer Transistor with High Drain Current, 47th International Conference on Solid State Devices and Materials (SSDM 2015), Sept. 2015.
• T. Kanazawa, T. Amemiya, A. Ishikawa, V. Upadhyaya, K. Tsuruta, T. Tanaka, Y. Miyamoto. Fabrication of Thin-Film HfS2 FET, 73rd Device Research Conference (DRC), June 2015.

国内会議発表 (査読なし・不明)

• 金澤 徹, 雨宮 智宏, 祢津 誠晃, Vikrant Upadhyaya, 福田 浩一, 宮本 恭幸. HfS2系トンネルトランジスタのデバイスシミュレーション, 第64回応用物理学会春季学術講演会, 16a-F203-3, Mar. 2017.
• 祢津 誠晃, 金澤 徹, Vikrant Upadhyaya, ウワンノー ティーラユット, 雨宮 智宏, 長汐 晃輔, 宮本 恭幸. Type II 型 HfS2/MoS2ヘテロジャンクションを有するTFET, 第64回応用物理学会春季学術講演会, 16a-F203-4, Mar. 2017.
• 金澤 徹, Vikrant Upadhyaya, 雨宮 智宏, 石川 篤, 鶴田 健二, 田中 拓男, 宮本 恭幸. HfO2パッシベーションによるHfS2 FETの特性改善, 第77回応用物理学会秋季学術講演会, No. 16a-A32-3, Sept. 2016.
• Vikrant Upadhyaya, Toru Kanazawa, Yasuyuki Miyamoto. Evaluation of electrical properties of HfS₂ thin flakes obtained by mechanical exfoliation, 電子情報通信学会電子デバイス研究会, 信学技報, vol. 116, no. 48, pp. 47-50, May 2016.
• Upadhyaya Vikrant, kanazawa Toru, Miyamoto Yasuyuki. Measures for mitigating environmental degradation of Two Dimensional Hafnium Disulfide Field Effect Transistor, 第63回応用物理学会春季学術講演会, 21p-H103-2, Mar. 2016.

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