論文

• Hanae Ishihara, Komaki Inoue, Akira Yamada, Makoto Konagai. Thermal stability improvement of Si1 − yCy layers by SiO2 cap layers, Thin Solid Films, Vol. 517, No. 1-3, pp. 213-215, Nov. 2008.
• Hanae Ishihara, Masahiko Murano, Akira Yamada, Makoto Konagai. Growth of Strain-Relaxed Si1-yCy Films with Compositionally Graded Buffer Layers by Gas Source Molecular Beam Epitaxy, Japanese Journal of Applied Physics, Vol. 46, No. 4A, 2007, pp. 1600-1603:(G05,A01), Apr. 2007.
• Masahiko Murano, Hanae Ishihara, Akira Yamada, Makoto Konagai. Growth of Strain-Relaxed Si1-yCy Films Using SOI Substrates, Journal of Crystal Growth, Vol. 301-302 (2007), pp. 335-338, Jan. 2007.

国際会議発表 (査読有り)

• A. Yamada, H. Ishihara, K. Inoue, M. Konagai. Epitaxial Growth of Si:C by means of Gas Source MBE, Pacific Rim Meeting on Electrochemical and Solid-State Science, Oct. 2008.

国際会議発表 (査読なし・不明)

• Hanae Ishihara, Komaki Inoue, Akira Yamada, Makoto Konagai. Thermal Stability Improvement of Si1-yCy Layers by SiO2 Cap Layers, 5th International Conference on Silicon Epitaxy and Heterostructures (ICSI-5), 5th International Conference on Silicon Epitaxy and Heterostructures, May 2007.

国内会議発表 (査読なし・不明)

• 石原英恵, 井上駒樹, 山田 明, 小長井 誠. SiO2 cap層を用いたSi1-yCy膜の熱耐性の改善, 第68回応用物理学会秋季学術講演会, 第68回応用物理学会秋季学術講演会, pp. 4p-E-16, Sept. 2007.

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