論文

• Takashi Kojima, Junichi Kimura, Muneyasu Suzuki, Kenji Takahashi, Takahiro Oikawa, Yukio Sakashita, Kazumi Kato, Takayuki Watanabe, Tadashi Takenaka, Tomoaki Yamada, Hiroshi Funakubo. Anisotropic electrical properties in bismuth layer structured dielectrics with natural super lattice structure, Appl. Phys. Lett., Vol. 101, pp. 012907-1-4, 2012.
• Shinichi Ito, Tomoaki Yamada, Kenji Takahashi, Shoji Okamoto, Takafumi Kamo, Hiroshi Funakubo, Ivoyl Koutsaroff, Marina Zelner, Andrew Cervin-Lawry. Effect of bottom electrode on dielectric property of sputtered-(Ba,Sr) TiO3 films, J.Appl.Phys., Vol. 105, pp. 061606-1-4, 2009.
• HIROSHI FUNAKUBO, Muneyasu Suzuki, Kenji Takahashi, Takayuki Watanabe. “Temperature Dependency of Dielectric Properties in Epitaxially Grown SrBi4Ti4O15 Films with Different Orientation”, Key Engineering Materials, Vol. 368-372, pp. 1811-1813, 2008.
• Naoki OHASHI, Kenji Takahashi, Shunichi Hishita, Isao Sakaguchi, HIROSHI FUNAKUBO, Hajime Haneda. Fabrication of ZnO Microstructures by AnisotropicWet-Chemical Etching, Journal of The Electrochemical Society, Vol. 154, No. 2, pp. D82-D87, 2007.
• Joe Sakai, Nobuaki Ito, ShinIchi Ito, Kenji Takahashi, Hiroshi Funakubo. “Oxygen Content and Magnetic Properties of SrRuO3-δ Thin Films”, IEEE Transactions on Magnetics,, Vol. 43, No. 6, pp. 3073-3075., 2007.
• Joe Sakai, Nobuaki Ito, Shinichi Ito, Kenji Takahashi, HIROSHI FUNAKUBO. “Effect of thermal treatment on oxygen stoichiometry and transport properties of SrRuO3 thin films”, Appl. Phys. Lett., Vol. 89, pp. 242115, 2006.
• Shiro Hino, Makoto Nakayama, Kenji Takahashi, Hiroshi Funakubo, Eisuke Tokumitsu. Characterization of Hafnium Oxide Thin Films by Sorce Gas Pulse Introduced Metalorganic Chemical Vapor Deposition using Amino-Family Hf Precursors, Jpn. J. Appl. Phys., Vol. 42, Part 1, No. 9B, pp. 6015-6018, Sept. 2003.
• Kenji Takahashi, Makoto Nakayama, Shiro Hino, Eisuke Tokumitsu, Hiroshi Funakubo. Growth of Hafnium Oxide Films by Metalorganic Chemical Vapor Deposition Using Oxygen-Free Hf[N(C2H5)2]4 Precursor and Their Properties, Integrated Ferroelectrics, vol. 57, pp. 1185-1192, Mar. 2003.
• Kenji Takahashi, Makoto Nakayama, Shintaro Yokoyama, Takeshi Kimura, Eisuke Tokumitsu. Preparation of hafnium oxide films from oxygen-free Hf[N(C2H5)2]4 precursor and their properties, Applied Surface Science, No. 216, pp. 296-301, Jan. 2003.

国際会議発表 (査読なし・不明)

• Hiroshi Funakubo, Kenji Takahashi, Muneyasu Suzuki, Takashi Kojima, Takayuki Watanabe, Kazumi Kato, Yukio Sakashita, Kazushi Sumitani, Osami Sakata. “Degradation Free Characteristics of c-axis Oriented Bismuth Layer-Structured Dielectrics”, International Symposium on Integrated Ferroelectrics (ISIF 2007), Vol. 4A-70-I, p. 30, May 2007.

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