論文

• Eisuke TOKUMITSU, Gen FUJII, Hiroshi ISHIWARA. Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor(MFIS)-and Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Ferroelectric SrBi₂Ta₂O₉ Film and SrTa₂O₆/SiON Buffer Layer, Jpn. J. Appl. Phys., Vol. 39, No. 4B, pp. 2125-2130, Apr. 2000.
• E.Tokumitsu, Gen Fujii, Hiroshi Ishiwara. Nonvolatile ferroelectric-gate FETs using SrBi₂Ta₂O₉/Pt/SrTa₂O₆/SiON/Si structures, Appl. Phys. Lett., Vol. 75, No. 4, pp. 575-577, July 1999.

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