論文

• Maiko Ariga, Masakazu Arai, Takeo Kageyama, C. Setiagung, Yoshihiko Ikenaga, N. Iwai, Hitoshi Shimizu, K. Nishikawa, Akihiko Kasukawa, Fumio Koyama. Noise Characteristics of GaInNAsSb 1300-nm-Range VCSEL with Optical Feedback for Isolator-Free Module, IEEE J. Select. Top. Quantum Electron., vol. 11, no. 5, pp. 1074-1078, Sept. 2005.
• Satoshi Shinada, Fumio Koyama, Nobuhiko Nishiyama, Masakazu Arai. Single high-order transverse mode surface emitting laser with micromachined surface relief, IEICE, Trans. IEICE, vol. E85-C, no. 4, pp. 995-1000, 2002.
• Masakazu Arai, Nobuhiko Nishiyama, Munechika Azuchi, Akihiro Matsutani, Fumio Koyama, Kenichi Iga. Monolithic formation of metal organic chemical vapor deposition grown multi-wavelength vertical cavities with highly strained GaInAs/GaAs quantum wells on GaAs (311)B, Jpn. J. Appl. Phys, Vol. 40, No. 6A, pp. 4056-4057, June 2001.
• Nobuhiko Nishiyama, Masakazu Arai, Satoshi Shinada, Munechika Azuchi, Akihiro Matsutani, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga. 1.12μm polarization controlled highly strained GaInAs vertical-cavity surface-emitting lasers on GaAs (311)B by metal organic chemical vapor deposition, Jpn. J. Appl. Phys., vol. 40, no. 5A, pp. L437-L439, May 2001.
• Masakazu Arai, Nobuhiko Nishiyama, Munechika Azuchi, Akihiro Matsutani, Fumio Koyama, Kenichi Iga. Monolithic formation of metal organic chemical vapor deposition grown multi-wavelength vertical cavities with highly strained GaInAs/GaAs quantum wells on GaAs (311)B, Jpn. J. Appl. Phys., Vol. 40, No. 6A, pp. 4056-4057, 2001.
• Nobuhiko Nishiyama, Masakazu Arai, Satoshi Shinada, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga. Growth and optical properties of highly strained GaInAs/GaAs quantum wells on (311)B GaAs by MOCVD, J. Crystal Growth, vol. 221, pp. 530-534, Dec. 2000.
• Nobuhiko Nishiyama, Masakazu Arai, Satoshi Shinada, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga. 1.15μm lasing operation of highly strained GaInAs/GaAs on GaAs (311)B substrate with high characteristic temperature (T₀=210 K), Jpn. J. Appl. Phys., vol. 39, no. 10B, pp. L1046-L1047, Oct. 2000.
• Shunichi Sato, Nobuhiko Nishiyama, Tomoyuki Miyamoto, Takashi Takahashi, Naoto Jikutani, Masakazu Arai, Akihiro Matsutani, Fumio Koyama, Kenichi Iga. Continuous wave operation of 1.26μm GaInNAs/GaAs vertical-cavity surface-emitting lasers grown by metalorganic chemical vapour deposition, Electron. Lett., vol. 36, no. 24, pp. 2018-2019, Oct. 2000.
• Masakazu Arai, Nobuhiko Nishiyama, Satoshi Shinada, Akihiro Matsutani, Fumio Koyama, Kenichi Iga. Highly stable single polarization operation of GaInAs/GaAs vertical-cavity surface-emitting laser on GaAs (311)B substrate under high-speed modulation, Jpn. J. Appl. Phys., Vol. 39, No. 8B, pp. L858-L860, Aug. 2000.
• Masakazu Arai, Nobuhiko Nishiyama, Satoshi Shinada, Akihiro Matsutani, Fumio Koyama, Kenichi Iga. Vertical-cavity surface-emitting laser array on GaAs(311)B substrate exhibiting single-transverse mode and stable-polarization operation, Jpn. J. Appl. Phys., Vol. 39, No. 6B, pp. L588-L590, June 2000.
• Masakazu Arai, Nobuhiko Nishiyama, Satoshi Shinada, Fumio Koyama, Kenichi Iga. AlAs oxidation system with H₂O vaporizer for oxide-confined surface emitting lasers, Jpn. J. Appl. Phys., Vol. 39, No. 6A, pp. 3468-3469, June 2000.
• Nobuhiko Nishiyama, Masakazu Arai, Satoshi Shinada, Koichi Suzuki, Fumio Koyama, Kenichi Iga. Multi-oxide layer structure for single-mode operation in vertical-cavity surface-emitting lasers, IEEE Photon. Technol. Lett., Vol. 12, No. 6, pp. 606-608, June 2000.
• Fumio Koyama, Takeru Amano, Noriyoshi Furukawa, Nobuhiko Nishiyama, Masakazu Arai, Kenichi Iga. Micromachined semiconductor vertical cavity for temperature insensitive surface emitting lasers and optical filters, Jpn. J. Appl. Phys., Vol. 39, No. 3B, pp. 1542-1545, Mar. 2000.
• Satoshi SHINADA, Fumio KOYAMA, Nobuhiko NISHIYAMA, Masakazu ARAI, Kenya GOTO, Kenichi IGA. Fabrication of micro-aperture surface emitting laser for near field optical data storage, Jpn. J. Appl. Phys., Vol. 38, No. 11B, pp. L198～L200, Nov. 1999.

国際会議発表 (査読有り)

• Takashi Kondo, Masakazu Arai, Tomoyuki Miyamoto, Fumio Koyama. Isolator-free, uncooled operation of highly strained 1.1 μm GaInAs/GaAs vertical cavity surface emitting laser for 10 Gb/s single mode fiber data transmission, Conference on Optical Fiber Communications, OFC2004, Feb. 2004.
• Satoshi Shinada, Nobuhiko Nishiyama, Masakazu Arai, Fumio Koyama. Far field pattern control of single high order transverse mode VCSEL with micromachined surface relief, IEEE Lasers and Electro-Optics Society 2001 Annual Meeting, IEEE Lasers and Electro-Optics Society 2001 Annual Meeting, WU 3, 2001.
• Satoshi Shinada, Fumio Koyama, Nobuhiko Nishiyama, Masakazu Arai, Akihiro Matsutani, Kenya Goto, Kenichi Iga. Optical near field by vertical cavity surface emitting laser, Trans. IEICE, Vol. J83-C, No. 9, pp. 826-833, 2000.
• T. Amano, F. Koyama, N. Furukawa, N. Nishiyama, M. Arai, Kenichi Iga. Micromachined GaAlAs/GaAs vertical cavity filter with adjustable temperature dependence, 5th Asia Pacific Conf. on Communications and 4th Optoelectronics and Communications Conf. (APCC/OECC’99), 5th Asia Pacific Conference on Communications and 4th Optoelectronics and Communications Conference (APCC/OECC'99), Vol. PD, pp. 19-20, Oct. 1999.
• N. Furukawa, F. Koyama, N. Nishiyama, M. Arai, T. Miyamoto, K. Iga. Micromachined tunable GaAlAs/GaAs DBR for temperature insensitive vertical cavity add/drop filter, 7th Microoptics Conf. , MOC’99, pp. 70-73, July 1999.
• N. Nishiyama, S. Shinada, M. Arai, F. Koyama, K. Iga. Threshold reduction of polarization controlled InGaAs/GaAs vertical-cavity surface emitting lasers on GaAs (311)B substrates, OSA Snowmass Meeting 1999, SMD3, pp. 43-45, Apr. 1999.

国内会議発表 (査読なし・不明)

• 近藤崇, 荒井昌和, 宮本智之, 西山伸彦, 川口真生, 小山二三夫, 伊賀健一. 1.2µm帯高歪GaInAs/GaAs量子井戸面発光レーザの発振特性, 第62回応用物理学会学術講演会, Sept. 2001.
• 牧野茂樹, 宮本智之, 影山健生, 池永賀彦, 荒井昌和, 小山二三夫, 伊賀健一. CBE法による1.3 μm GaInNAs量子井戸レーザの熱アニールによる特性改善, 第48回応用物理学関連連合講演会, Mar. 2001.
• 西山伸彦, 品田聡, 荒井昌和, 小山二三夫, 伊賀健一. 偏波制御面発光レーザのためのGaAs(311)B基板上InGaAs/GaAs量子井戸成長条件の検討, 第46回春季応用物理学会, 28a-P-8, Mar. 1999.

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