論文

• Takayoshi Oshima, Takeya Okuno, Naoki Arai, Norihito Suzuki, Yasushi Kobayashi, Harumichi Hino, Shizuo Fujita. Flame detection by a β-Ga₂O₃-based sensor, Jpn. J. Appl. Phys., Vol. 48, 011605, Jan. 2009.
• Takayoshi Oshima, Naoki Arai, Norihito Suzuki, Shigeo Ohira, Shizuo Fujita. Surface morphology of homoepitaxial β-Ga₂O₃ thin films grown by molecular beam epitaxy, Thin Solid Films, Vol. 516, pp. 5768-5771, July 2008.
• Takayoshi Oshima, Takeya OKuno, Naoki Arai, Norihito Suzuki, Shigeo Ohira, Shizuo Fujita. Vertical solar-blind deep-ultraviolet Schottky photodetectors based on β-Ga₂O₃ substrates, Appl. Phys. Express, Vol. 1, 011202, Jan. 2008.

国際会議発表 (査読有り)

• Takayoshi Oshima, Takeya Okuno, Naoki Arai, Norihito Suzuki, Shigeo Ohira, Shizuo Fujita. Potentially high breakdown field in β-Ga₂O₃ semiconductors, IEEE Nanotechnology Materials and Device Conference 2008, TuB I-3, Oct. 2008.
• Takayoshi Oshima, Naoki Arai, Norihito Suzuki, Shigeo Ohira, Shizuo Fujita. Deep UV detectors with a novel Ga₂O₃ semiconductor, 50th Electronic Materials Conference, Q5, June 2008.
• Takayoshi Oshima, Norihito Suzuki, Naoki Arai, SHigeo Ohira, Shizuo Fujita. Properties of wide bandgap β-Ga₂O₃ semiconductros grown by molecular beam epitaxy, 34th International Symposium on Compound Semiconductors, MoC P44, Oct. 2007.
• Takayoshi Oshima, Naoki Arai, Norihito Suzuki, Shigeo Ohira, Shizuo Fujita. Properties of homoepitaxial-grown β-Ga₂O₃ by molecular beam epitaxy, 5th International Symposium on Transparent Oxide Thin Films for Electronics and Optics, P43, May 2007.

国内会議発表 (査読有り)

• 大島 孝仁, 新井 直樹, 鈴木 悟仁, 大平 重男, 藤田 静雄. Schottky barrier diode based on β-Ga₂O₃, 第27回電子材料シンポジウム, J7, July 2008.

国内会議発表 (査読なし・不明)

• 大島孝仁, 奥野剛也, 新井直樹, 鈴木悟仁, 大平重男, 藤田静雄. β-Ga₂O₃基板を用いて作製したショットキーダイオードの破壊特性, 2008年秋季第69回応用物理学会学術講演会, 3a-ZR-7, Sept. 2008.
• 大島孝仁, 藤田静雄, 新井直樹, 鈴木悟仁, 大平重男. 分子線エピタキシー法によるβ-Ga₂O₃ 基板上へのβ-Ga₂O₃ ステップフロー成長, 2008年春季第55回応用物理学会関係連合講演会, 28a-W-1, Mar. 2008.
• 大島孝仁, 奥野剛也, 藤田静雄, 新井直樹, 鈴木悟仁, 大平重男. β-Ga₂O₃ 基板を利用した深紫外光検出器, 2008年春季第55回応用物理学会関係連合講演会, 28p-ZC-12, Mar. 2008.

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