論文

• Kanetake Takasaki, Kiyoshi Irino, Takayuki Aoyama, Youichi Momiyama, Toshiro Nakanishi, Yasuyuki Tamura, Takashi Ito. Impact of Nitrogen Profile in Gate Nitrided-Oxide on Deep-Submicron CMOS Performance and Reliability, Fujitsu Sci. and Tech. Jour., Fujitsu, Vol. 39, No. 1, pp. 40-51, Jan. 2003.
• Kanetake Takasaki, Kiyoshi Irino, Takayuki Aoyama, Youichi Momiyama, Toshiro Nakanishi, Yasuyuki Tamura, Takashi Ito. Impact of Nitrogen Profile in Gate Nitrided-Oxide on Deep-Submicron CMOS Performance and Reliability, FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, Fijitsu, Vol. 39, No. 1, pp. 40-51, 2003.
• Rinji Sugino, Toshiro Nakanishi, Kanetake Takasaki, Takashi Ito. Identification of MOS Gate Dielectric Breakdown Spot Using High Selectivity Cl Radical Etching Technique, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 143, No. 8, pp. 2691-2694, Aug. 1996.
• Yasuhisa Sato, Rinshi Sugino, Masaki Okuno, Toshiro Nakanishi, Takashi Ito. Electrical Characteristics of Silicon Devices after UV-Excited Cleaning, IEICE Transaction on Electronics, The Institute of Electronics, Information and Communication Engineers, Vol. E-76C, No. 1, pp. 41-45, Jan. 1993.

国際会議発表 (査読有り)

• Rinshi Sugino, Toshiro Nakanishi, Kanetake Takasaki, Takashi Ito. Identification of MOS Gate Dielectric-Breakdown Spot Using High-Selectivity Etching, Ext. Abs. of Int. Conf. on SSDM, Ext. Abs. of Int. Conf. on SSDM, 1995.

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