国際会議発表 (査読有り)

• Hiroyuki Yamada, Shiro Hino, Naruhisa Miura, Masayuki Imaizumi, Satoshi Yamakawa, EISUKE TOKUMITSU. Fabrication of 4H-SiC MOSFETs Using Stacked Al2O3 Gate Insulator with Pre-Annealed Al2O3 Buffer Layer, The International Conference on Silicon Carbide and Related Materials 2013, Oct. 2013.
• Eisuke Tokumitsu, Isahaya Yamamura, Shiro Hino, Naruhisa Miura, Masayuki Imaizumi, Hiroaki Sumitani, Tatsuo Oomori. Comparative Study of Metalorganic Chemical Vapour Deposition of HfO2 and Al2O3 Gate Insulators on SiC for Power MOSFET Applications, WoDiM 2012(17th Workshop on Dielectrics in Microelectronics), June 2012.
• Eisuke Tokumitsu, Akio Ishiguro, Hiroyuki Yamada, Shiro Hino, Naruhisa Miura, Masayuki Imaizumi, Hiroaki Sumitani, Tatsuo Oomori. Al2O3/4H-SiC MOSFETs Fabricated with High-Temperature Nitridation Process, 2011 International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), pp. 320, Sept. 2011.

国内会議発表 (査読有り)

• 木田憲之助, 日野史郎, 三浦 成久, 今泉昌之, 岸谷博昭, 徳光永輔. H(CH3)2Alを用いたMOCVD法SiC基板上へのAl2O3膜の形成とAl2O3/SiC MOSFETの電気的特性評価, 第７２回応用物理学会学術講演会, Aug. 2011.
• 山田泰之, 石黒暁夫, 日野史郎, 三浦 成久, 今泉昌之, 岸谷博昭, 徳光永輔. Al2O3堆積膜をゲート絶縁膜に用いたSiC-MOSFETの作製と評価, 応用物理学会シリコンテクノロジー分科会第１37回研究集会、電子情報通信学会シリコン材料デバイス研究会, 信学技報, pp. 11-15, July 2011.

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