論文

• Kenichi Goto, Tatsuya Yamazaki, Yasuo Nara, Tetsu Fukano, Toshihiro Sugii, Yoshihiro Arimoto, Takashi Ito. Ti Salicide Process for Sub-quarter-Micron CMOS Devices, IEICE TRANSACTIONS on Electronics, The Institute of Electronics, Information and Communication Engineers, Vol. E-77-C, No. 3, pp. 480-485, Mar. 1994.
• Manabu Kojima, Atsushi Fukuroda, Tetsu Fukano, Naoshi Higaki, Tatsuya Yamazaki, Toshihiro Sugii, Yoshihiro Arimoto, Takashi Ito. High-Speed SOI Bipolar Transistors Using Bonding and Thinning Techniques, IEICE TRANSACTIONS on Electronics, The Institute of Electronics, Information and Communication Engineers, Vol. E-76-C, No. 4, pp. 572-576, Apr. 1993.
• Toshihiro Sugii, Tatsuya Yamazaki, Tetsu Fukano, Takashi Ito. Epitaxially Grown Base Transistor for High-Speed Operation, Electron Device Letters, IEEE, IEEE Electron Devices Society, Vol. 8, No. 11, pp. 528-530, Nov. 1987.
• Takashi Ito, Hiroshi Horie, Tetsu Fukano, Hajime Ishikawa. A Nitride-Isolated Molybdenum-Polysilicon Gate Electrode for MOS VLSI Circuits, IEE Trans Electron Devices, IEEE Electron Devices Society, Vol. ED-33, No. 4, pp. 464-468, Apr. 1986.

国際会議発表 (査読有り)

• Kunihiro Suzuki, Tetsu Fukano, Tatsuya Yamazaki, Shinpei Hijiya, Takashi Ito, Hajime Ishikawa. Pseudo-HBT with Polysilicon Emitter Contact and an Ultra shallow Highly Doped Base by Photoepitaxy, Tech. Dig. of, IEDM, Tech. Dig. of, IEDM, pp. 811-813, 1998.
• Tatsuya Yamazaki, Kenichi Goto, Tetsu Fukano, Yasuo Nara, Toshihiro Sugii, Takashi Ito. 2l psec Switching 0.13μm-CMOS at Room Temperature Using High Performance Co Salicide Process, IEDM Dig. of Tech., IEDM Dig. of Tech., pp. 906-909, 1993.
• Naoshi Higaki, Tetsu Fukano, Atsushi Fukuroda, Toshihiro Sugii, Yoshihiro Arimoto, Takashi Ito. A Thin-Base Lateral Bipolar Transistor Fabricated on Bonded SOI, Dig. Tech. Papers of Symp. on VLSI Tech., Dig. Tech. Papers of Symp. on VLSI Tech., pp. 53-54, 1991.
• Manabu Kojim, Atsushi Fukuroda, Tetsu Fukano, Naoshi Higaki, Tatsuya Yamazaki, Toshihiro Sugii, Yoshihiro Arimoto, Takashi Ito. High-Speed Epitaxial Base Transistors on Bonded SOI, IEEE 1991 ,Bipolar Circuits and Technology Meeting, IEEE 1991 ,Bipolar Circuits and Technology Meeting, pp. 63-66, 1991.
• Atsushi Fukuroda, Toru Miyabo, Manabu Kojima, Tetsu Fukano, Naoshi Higaki, Tatsuya Yamazaki, Toshihiro Sugii, Yoshihiro Arimoto, Takashi Ito. Wafer Bonding and Thinning for High-Speed SOI Epitaxial-Base Transistor, Ext. Abst. of Int. Conf. on SSDM, Ext. Abst. of Int. Conf. on SSDM, pp. 168-169, 1991.
• Toshihiro Sugii, Tatsuya Yamazaki, Kunihiro Suzuki, Tetsu Fukano, Takashi Ito. Si Hetero-Bipolar Transistor with an SiC Emitter and a Thin Epitaxial Base, Tech. Dig. of IEDM, Tech. Dig. of IEDM, pp. 659-662, 1989.
• Kunihiro Suzuki, Tetsu Fukano, Hiroshi Ishiwari, Tatsuya Yamazaki, Masao Taguchi, Takashi Ito, Hajime Ishikawa. 50nm Ultra Thin Base Silicon Bipolar. Device Fabrication Based on Photo-epitaxial Growth, Digest of Symp. on VLSI Technology, Digest of Symp. on VLSI Technology, pp. 91-93, 1989.
• Toshihiro Sugii, Tatsuya Yamazaki, Tetsu Fukano, Takashi Ito. Thin-Base Bipolar Technology by Low-Temperature Photo-Epitaxy, Dig. of Symp. on VLSI Tech., Dig. of Symp. on VLSI Tech., pp. 35-36, 1987.
• Takashi Ito, Hiroshi Horie, Tetsu Fukano, Hajime Ishikawa. A Nitride Isolated Molybdenum-Polysilicon Gate Electrode, Dig. of Tech. Papers on 1985 Symp. on VLSI Tech., Dig. of Tech. Papers on 1985 Symp. on VLSI Tech., pp. 60-61, 1985.
• Tetsu Fukano, Takashi Ito, Tokushige Hisatsugu, Hajime Ishikawa. Ultra Sharp Trench Capacitors Formed by Peripheral Etching, Ext. Abst. of 16th (1984 International Conf. on SSDM, Ext. Abst. of 16th (1984 International Conf. on SSDM, pp. 471-472, 1984.
• Hiroshi Horie, Tetsu Fukano, Takashi Ito, Hajime Ishikawa. Multiple Self-Alignment MOS Technology (MUSA/MOS), Tech. Dig. of IEDM, Tech. Dig. of IEDM, pp. 398-401, 1984.
• Masao Taguchi, Takashi Ito, Tetsu Fukano, Tetsuo Nakamura, Hajime Ishikawa. Thermal Nitride Capacitors for High Density RAMs, Tech. Dig. of IEDM, Tech. Dig. of IEDM, pp. 400-403, 1981.

国内会議発表 (査読有り)

• Tetsu Fukano, Takashi Ito, Hajime Ishikawa. Microwave Annealing for Low Temperature VLSI Processing, Tech. Dig. of IEDM, pp. 224-225, 1985.

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