論文

• Hirokazu Chiba, Rikyu Ikariyama, Shintaro Yasui, HIROSHI FUNAKUBO. Growth of Epitaxial Bismuth Ruthenate Pyrochlore Films on Yttria-stabilized Zirconia (YSZ) and YSZ-buffered Si Substrates by Metal-organic Chemical Vapor Deposition, Thin Solid Films, Vol. 669, No. 1, pp. 471-474, Oct. 2018.
• Hirokazu Chiba, Masaki Hirano, Kazuhisa Kawano, Noriaki Oshima, Hiroshi Funakubo. Effect of substrate type and temperature on the growth of thin Ru films by metal organic chemical vapor deposition, Materials Science in Semiconductor Processing, vol. 70, pp. 73–77, Nov. 2017.
• Hirokazu CHIBA, Masaki HIRANO, Kazuhisa KAWANO, Noriaki OSHIMA, Hiroshi FUNAKUBO. Effects of substrate surface composition and deposition temperature on deposition of flat and continuous Ru thin films, Journal of the Ceramic Society of Japan, vol. 124, no. 6, June 2016.
• Hirokazu CHIBA, Ken-ichi TADA, Taishi FURUKAWA, Toshiki YAMAMOTO, Tadahiro YOTSUYA, Noriaki OSHIMA, Hiroshi FUNAKUBO. Low Temperature MOCVD of Ta2O5 with good dielectric property from Ta(NtBu)(OtBu)3 and O2, J. Ceram. Soc. Jpn., vol. 124, no. 5, pp. 510-514, May 2016.

国際会議発表 (査読なし・不明)

• Hirokazu Chiba, Masaki Hirano, Kazuhisa Kawano, Noriaki Oshima, Hiroshi Funakubo. Impact of Incubation Time on Deposition of Flat Ru Thin Film on Various Kinds of Substrates at Different Temperature, ISCSI-Ⅶ/ISTDM 2016, June 2016.
• Hirokazu Chiba, Ken-ichi Tada, Taishi Furukawa, Toshiki Yamamoto, Tadahiro Yotsuya, Noriaki Oshima, Hiroshi Funakubo. Low Temperature MOCVD deposited Ta2O5 films with good dielectric property from Ta(NtBu)(OtBu)3 and O2, STAC-9 & TOEO-9, Oct. 2015.

学位論文

• Deposition enhancement of thin films by combination design of precursor structure and coreactant gas in metal organic chemical vapor deposition process,  Outline,  Doctor (Engineering),  Tokyo Institute of Technology,  2018/09/20,   
• Deposition enhancement of thin films by combination design of precursor structure and coreactant gas in metal organic chemical vapor deposition process,  Thesis,  Doctor (Engineering),  Tokyo Institute of Technology,  2018/09/20, 
• Deposition enhancement of thin films by combination design of precursor structure and coreactant gas in metal organic chemical vapor deposition process,  Summary,  Doctor (Engineering),  Tokyo Institute of Technology,  2018/09/20,   
• Deposition enhancement of thin films by combination design of precursor structure and coreactant gas in metal organic chemical vapor deposition process,  Exam Summary,  Doctor (Engineering),  Tokyo Institute of Technology,  2018/09/20,   

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