論文

• "Keita Takahashi", "Kazuo Tsutsui". Growth of Thin Epitaxial CaxSr1-xF2/SrF2 Layers with Low Leakage Current on Ge Substrates, Japanese Journal of Applied Physics (JJAP), Vol. 52, No. 10R, Sept. 2013.
• Takao Oshita, Keita Takahashi, Kazuo Tsutsui. Growthofultra-thinfluorideheterostructuresonGe(111) for quantumdevices, Journal of Crystal Growth, vol. 311, pp. 2224-2226, Jan. 2009.

国際会議発表 (査読有り)

• T. Takahashi, T. Tamura, K. Tsutsui. Fabrication of fluoride heterostructures on Si: High temperature growth with CoSi2 buffer layer controlling undesirable chemical reactions, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• Keita Takahashi, Yuji Hayashi, Ryosuke Kayanuma, Kazuo Tsutsui. Leakage Current Control of Fluoride Ultra-thin Films Grown on Ge Substrates, 2011 Int. Conf. on Solid State Devices and Materials (SSDM 2011), Sept. 2011.
• Y. Y. Illarionov, M. I. Vexler, S. M. Suturin, V. V. Fedorov, N. S. Sokolov, K. Tsutsui, K. Takahashi. Electron Tunneling in MIS Capacitors with MBE Grown Fluoride Layers on Si(111) and Ge(111): Role of Transvers Momentum Conservation, 17th Conference on Insulating Films on Semiconductors (INFOS-2011), June 2011.
• Keita Takahashi, Yuki Yoshizumi, Yuji Fukuoka, Noboru Saito, Kazuo Tsutsui. Epitaxial NiSi2 Buffer Technique for Fluoride Resonant Tunneling Devices on Si, 2010 Int. Conf. on Solid State Devices and Materials (SSDM2010), Sept. 2010.
• Keita Takahashi, Takao Oshita, Kazuo Tsutsui. Molecular Beam Epitaxy of Very Thin Fluoride Films on Ge(111) and Its Application to Resonant Tunneling Diodes, 52nd Electronic Materials Conference (EMC2010), June 2010.

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