論文

• Keita Inoue, Dhanorm Plumwongrot, Nobuhiko Nishiyama, Shinichi Sakamoto, Haruki Enomoto, Shigeo Tamura, Takeo Maruyama, Shigehisa Arai. Loss Reduction of Si Wire Waveguide Fabricated by Edge-Enhancement Writing for Electron Beam Lithography and Reactive Ion Etching Using Double Layered Resist Mask with C60, Jpn. J. Appl. Phys., vol. 48, no. 3, p. 030208, Mar. 2009.
• Tadashi Okumura, Takeo Maruyama, Masaki Kanemaru, Shinichi Sakamoto, SHIGEHISA ARAI. Single-mode operation of GaInAsP/InP-membrane distributed feedback (DFB) lasers bonded on silicon-on-insulator (SOI) substrate with rib-waveguide structure, Jpn. J. Appl. Phys., Vol. 46, No. 48, pp. L1206-L1208, Dec. 2007.
• H. Naitoh, S. Sakamoto, Mamoru Otake, T. Okumura, T. Maruyama, N. Nishiyama, S. Arai. GaInAsP/InP Membrane Buried Heterostructure Distributed Feedback Laser with Air-Bridge Structure, Jpn. J. Appl. Phys., vol. 46, no. 47, pp. L1158-L1160, Nov. 2007.
• S. Sakamoto, H. Naitoh, M. Ohtake, Y. Nishimoto, T. Maruyama, N. Nishiyama, S. Arai. 85°C Continuous-Wave Operation of GaInAsP/InP-Membrane Buried Heterostructure Distributed Feedback Lasers with Polymer Cladding Layer, Jpn. J. Appl. Phys., vol. 46, no. 47, pp. L1155-L1157, Nov. 2007.
• S. Sakamoto, Y. Nishimoto, S. Tamura, T. Maruyama, N. Nishiyama, S. Arai. Strongly Index-Coupled Membrane BH-DFB Lasers With Surface Corrugation Grating, IEEE J. Select. Top. in Quantum Electron., IEEE, vol. 13, no. 5, pp. 1135-1141, Sept. 2007.
• Takeo Maruyama, Tadashi Okumura, Shinichi Sakamoto, Koji Miura, Yoshifumi Nishimoto, SHIGEHISA ARAI. GaInAsP/InP membrane BH-DFB lasers directly bonded on SOI substrate, Opt. Express, Vol. 16, No. 14, pp. 8814-8818, Sept. 2006.

国際会議発表 (査読有り)

• Keita Inoue, Dhanorm Plumuwongrot, Nobuhiko Nishiyama, Shinichi Sakamoto, Haruki Enomoto, Shigeo Tamura, Takeo Maruyama, Shigehisa Arai. Loss Reduction of SiWireWaveguide on SOI Substrate Prepared by Parallel Plate RIE using Double Layered Resist Mask with C60, The IEEE Nanotechnology Materials and Devices Conference 2008, IEEE NMDC2008, Oct. 2008.  公式リンク  
  
• SHIGEHISA ARAI, SAEED MAHMUD ULLAH, SeungHun Lee, PDHANORM, Munetaka Kurokawa, Shinichi Sakamoto, Hideyuki Naitoh, Tadashi Okumura, Takeo Maruyama, Nobuhiko Nishiyama. GaInAsP/InP Distributed Feedback and Distributed Reflector Lasers with Fine Wirelike Active Regions, Photonics WEST Optoelectronics 2008, OPTO2008 (part of SPIE Photonics West 2008), SPIE, Vol. Photonics WEST Optoelectronics 2008, No. San Jose (USA), pp. 6902-04, Jan. 2008.
• Tadashi Okumura, Takeo Maruyama, Masaki Kanemaru, Shinichi Sakamoto, shigeo tamura, SHIGEHISA ARAI. Fundamental-mode operation of GaInAsP/InP membrane DFB lasers bonded on SOI substrate and its waveguide integration, The 19th Indium Phosphide and Related Material, TuB2-2, May 2007.
• Hideyuki Naitoh, Shinichi Sakamoto, Mamoru Otake, Tadashi Okumura, Takeo Maruyama, Nobuhiko Nishiyama, SHIGEHISA ARAI. 80 ºC CW Operation of GaInAsP/InP Membrane BH-DFB Laser With Air-Bridge Structure, The 19th Indium Phosphide and Related Material (IPRM 2007), Vol. Matsue (Japan), No. ThB1-2, May 2007.
• Takeo Maruyama, Tadashi Okumura, Shinichi Sakamoto, Koji Miura, Yoshifumi Nishimoto, SHIGEHISA ARAI. GaInAsP/InP long-wavelength membrane BH-DFB lasers directly bonded on SOI Substrate, The 11th Opto-Electronics and Communications Conferen, Vol. Kaohsiung (Taiwan), No. 5E1-3, July 2006.

国際会議発表 (査読なし・不明)

• Haruki Enomoto, Hai Duc Nguyen, Keita Inoue, Shinichi Sakamoto, Tadashi Okumura, Nobuhiko Nishiyama, Shimon Kondo, Shigehisa Arai. Comparison of Wafer Bonding Methods of Membrane GaInAsP WiredWaveguides on Si Substrate, 2008 International Nano-Optoelectronics Workshop, 2008 International Nano-Optoelectronics Workshop, session3-P27, Aug. 2008.

国内会議発表 (査読なし・不明)

• 井上敬太, プルームウォンロート･タノーム, 西山伸彦, 阪本真一, 榎本晴基, 田村茂雄, 丸山武男, 荒井滋久. C60含有と非含有EBレジストZEPの重ね塗りによるSi導波路ドライエッチング形状の向上, 第55回応用物理学関係連合講演会, 第55回応用物理学関係連合講演会, 応用物理学会, Vol. 千葉, No. 29p-ZG-15, Mar. 2008.
• Takeo Maruyama, Tadashi Okumura, Masaki Kanemaru, Shinichi Sakamoto, shigeo tamura, SHIGEHISA ARAI. Thermal characteristics of GaInAsP/InP membrane DFB lasers on SOI substrate integrated with rib-waveguide, The 12th Opto-Electronics and Communications Conference, 12D1-3, July 2007.
• 内藤秀幸, 阪本真一, 大竹守, 奥村忠嗣, 丸山武男, 西山伸彦, 荒井滋久. エアブリッジ構造を用いたGaInAsP/InP半導体薄膜BH-DFBレーザ, 電子情報通信学会レーザ・量子エレクトロニクス研究会, 電子情報通信学会レーザ・量子エレクトロニクス研究会, 電子情報通信学会, Vol. 東京, no. LQE2007-21, pp. 19-22, June 2007.
• 丸山武男, 奥村忠嗣, 金丸正樹, 阪本真一, 荒井滋久. 導波路集積型SOI基板上GaInAsP/InP薄膜DFBレーザ, 第54回応用物理学関係連合講演会, Vol. 神奈川, No. 28a-SG-11, Mar. 2007.
• 内藤秀幸, 阪本真一, 大竹守, 奥村忠嗣, 丸山武男, 西山伸彦, 荒井滋久. エアブリッジ構造を用いたGaInAsP/InP半導体薄膜BH-DFBレーザ, 第54回応用物理学関係連合講演会, 第54回応用物理学関係連合講演会, Vol. 神奈川, No. 28p-SG-11, p. 1225, Mar. 2007.
• 丸山武男, 奥村忠嗣, 金丸正樹, 阪本真一, 荒井滋久. SOI基板上導波路集積型BH-DFB半導体薄膜レーザ, 電子情報通信学会シリコンフォトニクス研究会, Vol. 東京, No. SiPH2006-11, pp. 49-52, Jan. 2007.
• 奥村忠嗣, 丸山武男, 阪本真一, 西本頼史, 荒井滋久. 直接貼り付け法によるSOI基板上GaInAsP/InP半導体薄膜レーザ, 電子情報通信学会レーザ・量子エレクトロニクス研究会, Vol. 東京, No. LQE2006-104, pp. 7-12, Dec. 2006.
• 丸山武男, 奥村忠嗣, 阪本真一, 荒井滋久. 直接貼付法によるSOI基板上GaInAsP/InP薄膜DFBレーザ, 第67回応用物理学会学術講演会, Vol. 滋賀, No. 29a-ZT-15, p. Digest III-p. 1049, Aug. 2006.
• Takeo Maruyama, Tadashi Okumura, Shinichi Sakamoto, Koji Miura, Yoshifumi Nishimoto, SHIGEHISA ARAI. Direct bonding of GaInAsP/InP membrane structure on SOI wafer, The 18th Indium Phosphide and Related Materials Conference (IPRM2006), The 18th Indium Phosphide and Related Materials Conference, Vol. WP-2, May 2006.

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