論文

• ダリューシュザデ, Takashi Kanda, 山下晃司, Kuniyuki KAKUSHIMA, Hiroshi Nohira, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Capacitance-Voltage Characterization of La2O3 Metal-Oxide-Semiconductor Structures on Ino.53Ga.0.47As Substrate with Different Surface Treatment Methods, Japanese Journal of Applied Physics, Vol. 50, No. 10, pp. 10PD03-1-4, Oct. 2011.
• ダリューシュザデ, Kuniyuki KAKUSHIMA, Takashi Kanda, Y.C.Lin, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, E.Y.Chang, KENJI NATORI, takeo hattori, HIROSHI IWAI. Improving electrical characteristics of W/HfO2/Ino.53Gao.47As gate stacks by altering deposition techniques, Microelectronic Engineering, Vol. 88, No. 7, pp. 1109-1112, July 2011.

国際会議発表 (査読なし・不明)

• Takashi Kanda, ダリューシュザデ, Y. C. Lin, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, E.Y. Chang, KENJI NATORI, takeo hattori, HIROSHI IWAI. Annealing Effect on the Electrical Properties of La2O3/InGaAs MOS Capacitors, CSTIC2011, 2011.
• ダリューシュザデ, Takashi Kanda, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Effects of In0.53Ga0.47As Surface Preparation on MOS Device Electrical Characterization, 2011 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology(IWDTF-11), 2011.

国内会議発表 (査読なし・不明)

• 細井隆司, 神田高志, ダリューシュザデ, Yueh Chin Lin, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, Edward Yi Chang, 名取研二, 服部健雄, 岩井洋. 絶縁膜材料を用いたIn0.53Ga0.47As MOSキャパシタの電気特性, 第７１回応用物理学会学術講演会, Sept. 2010.
• 神田高志, 船水清永, Yueh Chin Lin, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, Edward Yi Chang, 名取研二, 服部健雄, 岩井洋. HfO2/ La2O3/ In0.53 Ga0.47As構造の界面特性の変化, 第57回応用物理学関係連合講演会, 第57回応用物理学関係連合講演会講演予稿集, pp. 13-141, Mar. 2010.
• ダリューシュザデ, 神田高志, 細井隆司, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 岩井洋. Towards High Performance III-V MOSFET, A Study on high-k Gate Stacks on In0.53Ga0.47As, 複合創造領域シンポジウム, 2010.
• Kiyohisa Funamizu, Takashi Kanda, Y.C.Lin, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, E.Y.Chang, KENJI NATORI, takeo hattori, HIROSHI IWAI. Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.

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