論文

• Kuniyuki KAKUSHIMA, Koichi Okamoto, Tomotsune Koyanagi, Miyuki Kouda, Kiichi Tachi, Takamasa Kawanago, Jaeyeol Song, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Selection of rare earth silicates for highly scaled gate dielectrics, Microelectronic Engineering, Vol. 87, No. 10, pp. 1868-1871, Oct. 2010.
• Kuniyuki KAKUSHIMA, Kiichi Tachi, M.Adachi, Koichi Okamoto, Soshi Sato, Jaeyeol Song, Takamasa Kawanago, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Interface and electrical properties of La-silicate for direct contact of high-k with silicon, Solid-State Electronics, Vol. 54, pp. 715-719, June 2010.
• M.K.Bera, Jaeyeol Song, Ahmet Parhat, Kuniyuki KAKUSHIMA, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Yttrium-scandium oxide as high-k gate dielectric for germanium metal-oxide-semiconductor devices, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol. 25, No. 6, 065008, May 2010.
• M.K. Bera, Jaeyeol Song, Ahmet Parhat, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Yttrium-scandium oxide as high-k gate dielectric for germanium metal-oxide-semiconductor devices, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol. 25, No. 6, 065008, May 2010.
• Kuniyuki KAKUSHIMA, Koichi Okamoto, Tomotsune Koyanagi, Miyuki Kouda, Kiichi Tachi, Takamasa Kawanago, Jaeyeol Song, Ahmet Parhat, Hiroshi Nohira, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. SrO capping effect for La2O3/ Ce-Silicate gate dielectrics, Microelectronics Reliability 50, pp. 356-359, Mar. 2010.
• Kuniyuki KAKUSHIMA, Tomotsune Koyanagi, Kiichi Tachi, Jaeyeol Song, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Characterization of flatband voltage roll-off and roll-up behavior in La2O3/silicate gate dielectric, Solid-State Electronics, Vol. 54, pp. 720-723, 2010.
• Kuniyuki KAKUSHIMA, Kiichi Tachi, Jaeyeol Song, Soshi Sato, Hiroshi Nohira, E. Ikenaga, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Comprehensive x-ray photoelectron spectroscopy study on compositional gradient lanthanum silicate film, JOURNAL OF APPLIED PHYSICS, [ 145] K. Kakushima, K. Tachi K, J. Song, S. Sato, H. Nohira, E. Ikenaga, P. Ahmet, K.Tsutsui, N. Sugii, T.Hattori, H. Iwai, “Comprehensive x-ray photoelectron spectroscopy study on compositional gradient lanthanum silicate film”, JOURNAL OF APPLIED PHYSICS, Vol.106, 2009, Vol. 106, 2009.
• Takamasa Kawanago, Kiichi Tachi, Jaeyeol Song, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Electrical characterization of directly deposited La-Sc oxides complex for gate insulator application, Microelectronic Engineering, Vol. 84, pp. 2335-2338, 2007.
• Jaeyeol Song, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Improvement of interfacial properties with interfacial layer in La2O3 / Ge structure, Microelectronic Engineering, Vol. 84, pp. 2336-2339, 2007.

国際会議発表 (査読有り)

• M.K.Bera, Jaeyeol Song, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Electrical Properties of Lanthanum-scandate Gate Dielectric Directly Deposited on Ge, ECS 216th Meeting, vol. 25, No. 6, pp. 67-77, Oct. 2009.
• Kuniyuki KAKUSHIMA, Koichi Okamoto, Tomotsune Koyanagi, Kiichi Tachi, Miyuki Kouda, Takamasa Kawanago, Jaeyeol Song, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Selection of Rare Earth Silicate with SrO Capping for EOT Scaling below o.5 nm, ESSDERC 2009, 39th European Solid-State Device Research Conference, p. 403, Sept. 2009.
• Takamasa Kawanago, Jaeyeol Song, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Experimental Study for High Efffective Mobility with directly deposited HfO2/La2O3 MOSFET, INFOS2009, Microelectronic Engineering, INFOS2009, Vol. 86, pp. 1629-1631, June 2009.
• Jaeyeol Song, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Post metallization annealing study in La2O3/Ge MOS structure, INFOS2009, Microelectronic Engineering, INFOS2009, Vol. 86, pp. 1638-1641, June 2009.
• Kuniyuki Kakushima, Kouichi Okamoto, Manabu Adachi, Kiichi Tachi, Jaeyeol Song, Soushi Sato, Takamasa Kawanago, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai. Band Bending Measurement of HfO2/SiO2/Si Capacitor with ultra-thin La2O3 Insertion by XPS, Fifth International Symposium on Control of Semiconductor Interfaces (ISCSI2007), Nov. 2007.
• H. Nohira, T. Matsuda, K. Tachi, Y. Shiino, J. Song, Y. Kuroki, J. Ng, P. Ahmet, K. Kakushima, K. Tsutsui, E. Ikenaga, K. Kobayashi, H. Iwai, T. Hattori. Effect of Deposition Temperature on Thermal Stability of Lanthanum Oxide/Si Interfacial Transition Layer, 2006 Joint International Meeting of ECS, Oct. 2006.

国内会議発表 (査読有り)

• 宋在烈, 角嶋邦之, パールハット・アヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. La2O3/Ge MIS 構造における微量Si 界面層導入による電気特性の変化, 秋季第68回応用物理学会学術講演会, Sept. 2007.
• 佐藤創志, 舘喜一, 宋在烈, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. ラジカル窒化によるLa_2O3ゲート絶縁膜への窒素導入効果 : 堆積時窒化によるEOT増加抑制効果（ゲート絶縁膜、容量膜、機能幕及びメモリ技術）, 電子情報通信学会技術研究報告、SDM、シリコン材料・デバイス, 電子情報通信学会, Vol. 107, No. 85, pp. 71-74, May 2007.

国際会議発表 (査読なし・不明)

• Kuniyuki KAKUSHIMA, Tomotsune Koyanagi, 来山大祐, Miyuki Kouda, Jaeyeol Song, Takamasa Kawanago, M. Mamatrishat, Kiichi Tachi, M. K. Bera, Ahmet Parhat, Hiroshi Nohira, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, Keisaku Yamada, HIROSHI IWAI. Direct Contact of High-k/Si Gate Stack for EOT below 0.7 nm using LaCe-silicate Layer with Vfb controllability, 2010 Symposium on VLSI Technology, June 2010.

国内会議発表 (査読なし・不明)

• 角嶋邦之, 小柳友常, 来山大祐, 幸田みゆき, 宋在烈, 佐藤創志, 川那子高暢, M. マイマイティ, 舘喜一, M.K. Bera, パールハットアヘメト, 野平博司, 筒井一生, 西山彰, 杉井信之, 名取研二, 服部健雄, 山田啓作, 岩井洋. LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御, 応用物理学会分科会 シリコンテクノロジー, ，野平博司，筒井一生，西山彰，杉井信之，名取研二，服部健雄，山田啓作，岩井洋“LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御” 応用物理学会分科会 シリコンテクノロジー No.127 pp.4-8（2010年7月22日 ）, No. 127, pp. 4-8, July 2010.
• M.K. Bera, Jaeyeol Song, Ahmet Parhat, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Rare-earth based mixed oxide as high-k gate dielectrics for Ge MOSFET, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• Jaeyeol Song, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, Nobuyuki Sugii, takeo hattori, HIROSHI IWAI. Effect of Ultrathin Si Passivation Layer for La2O3/Ge MOS structure, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• 宋在烈, 舘喜一, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. 極薄Si界面層を挿入したLa2O3/Ge MIS構造における界面準位密度低減に関する検討, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 840, Mar. 2009.
• 宋在烈, 舘喜一, 岡本晃一, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋. Laシリケート層を界面に用いたhigh-k/Si MOS構造の電気特性検討, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 849, Mar. 2008.

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