論文

• Kiyoshi Takeuchi, Munetoshi Fukui, Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Shinichi Suzuki, Yohichiroh Numasawa, Naoyuki Shigyo, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Wataru Saito, Shin-ichi Nishizawa, Masanori Tsukuda, Ichiro Omura, Hiromichi Ohashi, Toshiro Hiramoto. Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs, IEEE Trans. On Semiconductor Manufactureing, Vol. 33, No. 2, pp. 159-165, May 2020.
• Akira Nakajima, Shunsuke Kubota, Kazuo Tsutsui, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai, Shin-ichi Nishizawa, Hiromichi Ohashi. GaN-based CMOS Inverter with Normally-off P- and N-channel MOSFETs in GaN/AlGaN/GaN Platform, IET Power Electronics, Vol. 11, No. 4, pp. 689-694, Apr. 2018.

国際会議発表 (査読有り)

• Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Katsumi Satoh, Tomoko Matsudai, Takuya Saraya, Iriya Muneta, Hitoshi Wakabayashi, Akira Nakajima, Shin-ichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Iwai. Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices, IEEE 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021), Proceedings of the 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021), pp. 217-219, Apr. 2021.
• Takuya Saraya, Kazuo Ito, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Masanori Tsukuda, Katsumi Satoh, Tomoko Matsudai, Kuniyuki Kakushima, Takuya Hoshii, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Wataru Saito, Shin-ichi Nishizawa, Ichiro Omura, Hiromichi Ohashi, Toshiro Hiramoto. 3.3 kV Back-Gate-Controlled IGBT (BC-IGBT) Using Manufacturable Double-Side Process Technology, International Electron Devices Meeting (IEDM) 2020, Dec. 2020.
• T. Hiramoto, T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, Y. Numasawa, K. Satoh, T. Matsudai, W. Saito, K. Kakushima, T. Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, H. Wakabayashi, K. Tsutsui, H. Iwai, A. Ogura, S. Nishizawa, I. Omura, H. Ohash. Switching of 3300V Scaled IGBT by 5V Gate Drive, ASICON (International Conference on ASIC), Oct. 2019.
• Takuya Hoshii, Akira Nakajima, Shin-ichi Nishizawa, Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui. Quantitative evaluation of interfacial charges at GaN/AlGaN interfaces, 13tu Int. Conf. on Nitride Semiconductor (ICNS), July 2019.
• Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Masanori Tsukuda, Yohichiroh Numasawa, Katsumi Satoh, Tomoko Matsudai, Wataru Saito, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Shin-Ichi Nishizawa, Ichiro Omura, Hiromichi Ohashi, Toshiro Hiramo. 3300V Scaled IGBTs Driven by 5V Gate Voltag, 31th Int. Symp. On Power Semiconductor Devices and ICs (ISPSD2019), May 2019.
• Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Katsumi Satoh, Tomoko Matsudai, Takuya Saraya, Toshihiro Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Iriya Muneta, Hitoshi Wakabayashi, Akira Nakajima, Shin-ichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Iwai. Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs, 31th Int. Symp. On Power Semiconductor Devices and ICs (ISPSD2019), May 2019.
• T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, Y. Numasawa, K. Satoh, T. Matsudai, W. Saito, K. Kakushima, T. Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, K. Tsutsui, H. Iwai, A. Ogura, S. Nishizawa, I. Omura, H. Ohashi, T. Hiramoto. Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss, International Electron Devices Meeting (IEDM2018), Dec. 2018.
• Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Masahiro Watanabe, Naoyuki Shigyo, Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Iriya Muneta, Hitoshi Wakabayashi, Sinichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Iwai. Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately, 44th European Solid-State Circuits Conference (ESSDERC2018), Sept. 2018.
• K. Kakushima, T. Hoshii, M. Watanabe, N. Shigyo, K. Furukawa, T. Saraya, T. Takakura, K. Itou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, Y. Numasawa, A. Ogura, S. Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Iwai. New methodology for evaluating minority carrier lifetime for process assessment, Symp. On VLSI Technology (VLSI2018), June 2018.
• Takuya Hoshii, Rumi Takayama, Akira Nakajima, Shin-ichi Nishizawa, Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui. Back-gate effect on p-channel GaN MOSFETs on Polarization-Junction Substrate, International Conference on Solid-State Devices and Materials (SSDM2017), Sept. 2017.
• K. Kakushima, T. Hoshii, K. Tsutsui, A. Nakajima, S. Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. Omura, H. Ohashi, H. Iwai. Experimental Verification of a 3D Scaling Principle for Low Vce(sat) IGBT, 62th International Electron Devices Meeting (IEDM2016), p. 268, Dec. 2016.
• Akira Nakajima, Shunsuke Kubota, Kazuo Tsutsui, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai, Sin-ichi Nishizawa, Hiromichi Ohashi. Monolithic Integration of GaN-based Normally-off P- and N-channel MOSFETs, 13th International Seminar on Power Semiconductors (ISPS), Aug. 2016.
• A. Nakajima, S. Kubota, R. Kayanuma, K. Tsutsui, K. Kakushima, H. Wakabayashi, H. Iwai, S. Nishizawa, H. Ohashi. An overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform, 2015 IEEE Compound Semiconductor IC Symposium (CSICS2015), Oct. 2015.
• Akira Nakajima, Shin-Ichi Nishizawa, Hiromichi Ohashi, Rei Kayanuma, Kazuo Tsutsui, Shunsuke Kubota, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai. GaN-Based Monolithic Power Integrated Circuit Technology with Wide Operating Temperature on Polarization-Junction Platform, The 27th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD2015), May 2015.
• Akira Nakajima, Sin-ichi Nishizawa, Hiromichi Ohashi, Hiroaki Yonezawa, Kazuo Tsutsui, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai. One-Chip Operation of GaN-Based p-Channel and N-Channel Heterojunction Field Effect Transistors, The 26th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD2014), 2014.

国際会議発表 (査読なし・不明)

• Takuya Hoshii, Shuma Tsuruta, Akira Nakajima, Shin-ichi Nishizawa, Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui. Performance Prediction of Scaled p-channel GaN MOSFET on Polarization Junction Platform, International Workshop on Nitride Semiconductors (IWN2018), Nov. 2018.
• K. Tsutsui, K. Kakushima, T. Hoshii, A. Nakajima, S. Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. Omura, H. Ohashi, H. Iwai. 3D Scaling for Insulated Gate Bipolar Transistors (IGBTs) with Low Vce(sat), ASICON2017, Proceedings of International Conference on ASIC, Vol. 2017-October, pp. 1137-1140, Oct. 2017.  公式リンク  
  
• Shunsuke Kubota, Rei Kayanuma, Akira Nakajima, Shin-ichi Nishizawa, Shin-ichi Nishizawa, Hiromichi Ohashi, Hitoshi Wakabayashi, Kazuo Tsutsui. P-Channel AlGaN/GaN MOSFETs for Normally-Off Operation, 2015 Material Research Society (MRS) Fall Meeting, Nov. 2015.

国内会議発表 (査読なし・不明)

• 沖田 寛昌, 星井 拓也, 松橋 泰平, Sanyal Indraneel, Chen Yu-Chih, Ju Ying-Hao, 中島 昭, 西澤 伸一, 大橋 弘通, 角嶋 邦之, 若林 整, Chyi Jen-Inn, 筒井 一生. TEGを用いたAlGaN/GaNヘテロ成長の2DEG側界面電荷への影響, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• 星井 拓也, 中島 昭, 西澤 伸一, 大橋 弘通, 角嶋 邦之, 若林 整, 筒井 一生. 分極接合基板におけるAlGaN/GaNヘテロ界面の欠陥電荷評価, 日本結晶成長学会ナノエピ分科会 第11回ナノ構造・エピタキシャル成長講演会, June 2019.
• 鶴田 脩真, 星井 拓也, 中島 昭, 西澤 伸一, 大橋 弘通, 角嶋 邦之, 若林 整, 筒井 一生. AlGaN/GaN 界面準位が分極接合基板上 p-MOSFET の電流特性に与える影響, 第79回応用物理学会秋季学術講演会, Sept. 2018.

学位論文

• 直接点弧型光トリガ大電力サイリスタに関する研究,  本文,  Doctor of Engineering,  Tohoku University,  1990/--/--, 

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