論文

• Takayoshi Oshima, Takeya Okuno, Naoki Arai, Yasushi Kobayashi, Shizuo Fujita. β-Al_2rGa_2-2rO₃ thin film growth by molecular beam epitaxy, Jpn. J. Appl. Phys., Vol. 48, 0702002, June 2009.
• Takayoshi Oshima, Takeya Okuno, Naoki Arai, Yasushi Kobayashi, Shizuo Fujita. Wet etching of β-Ga₂O₃-based sensor, Jpn. J. Appl. Phys., Vol. 48, 040208, Apr. 2009.
• Takayoshi Oshima, Takeya Okuno, Naoki Arai, Norihito Suzuki, Yasushi Kobayashi, Harumichi Hino, Shizuo Fujita. Flame detection by a β-Ga₂O₃-based sensor, Jpn. J. Appl. Phys., Vol. 48, 011605, Jan. 2009.
• Shigeo Ohira, Naoki Arai, Takayoshi Oshima, Shizuo Fujita. Atomically controlled surfaces with step and terrace of β-Ga₂O₃ single crystal substrates for thin film growth, Appl. Surf. Sci., Vol. 254, pp. 7838-7842, Sept. 2008.
• Takayoshi Oshima, Naoki Arai, Norihito Suzuki, Shigeo Ohira, Shizuo Fujita. Surface morphology of homoepitaxial β-Ga₂O₃ thin films grown by molecular beam epitaxy, Thin Solid Films, Vol. 516, pp. 5768-5771, July 2008.
• Takayoshi Oshima, Takeya OKuno, Naoki Arai, Norihito Suzuki, Shigeo Ohira, Shizuo Fujita. Vertical solar-blind deep-ultraviolet Schottky photodetectors based on β-Ga₂O₃ substrates, Appl. Phys. Express, Vol. 1, 011202, Jan. 2008.

国際会議発表 (査読有り)

• Takayoshi Oshima, Takeya Okuno, Naoki Arai, Yasushi Kobayashi, Shizuo Fujita. β-Al_2rO<subGa_2-2rO₃ thin film growth by molecular beam epitaxy, 36th International Symposum on Compound Semiconductors, 7.5, Aug. 2009.
• Takayoshi Oshima, Takeya Okuno, Naoki Arai, Yasushi Kobayashi, Shizuo Fujita. Patterning of β-Ga₂O₃ for device fabrication, 6th International Symposium on Transparent Oxide Thin Films for Electronics and Optics, 16p-P167, Apr. 2009.
• Takayoshi Oshima, Takeya Okuno, Naoki Arai, Satoshi Takeda, Yasushi Kobayashi, Harumichi Hino, Shizuo Fujita. Solar-blind photodetector based on β-Ga₂O₃ and its application to a flame sensor, 6th International Symposium on Transparent Oxide Thin Films for Electronics and Optics, 16a-O004, Apr. 2009.
• Takayoshi Oshima, Takeya Okuno, Naoki Arai, Norihito Suzuki, Shigeo Ohira, Shizuo Fujita. Potentially high breakdown field in β-Ga₂O₃ semiconductors, IEEE Nanotechnology Materials and Device Conference 2008, TuB I-3, Oct. 2008.
• Takayoshi Oshima, Naoki Arai, Norihito Suzuki, Shigeo Ohira, Shizuo Fujita. Deep UV detectors with a novel Ga₂O₃ semiconductor, 50th Electronic Materials Conference, Q5, June 2008.
• Takayoshi Oshima, Norihito Suzuki, Naoki Arai, SHigeo Ohira, Shizuo Fujita. Properties of wide bandgap β-Ga₂O₃ semiconductros grown by molecular beam epitaxy, 34th International Symposium on Compound Semiconductors, MoC P44, Oct. 2007.
• Takayoshi Oshima, Naoki Arai, Shigeo Ohira, Shizuo Fujita. Homoepitaxial step-flow growth of β-Ga₂O₃ thin films by molecular beam epitaxy, 14th International Workshop on Oxide Electronics, PII-20, Oct. 2007.
• Takayoshi Oshima, Naoki Arai, Norihito Suzuki, Shigeo Ohira, Shizuo Fujita. Properties of homoepitaxial-grown β-Ga₂O₃ by molecular beam epitaxy, 5th International Symposium on Transparent Oxide Thin Films for Electronics and Optics, P43, May 2007.

国内会議発表 (査読有り)

• 大島 孝仁, 奥野 剛也, 新井 直樹, 竹田 聡, 小林 恭, 樋野 治道, 藤田 静雄. β-Ga₂O₃based sensor for flame detection, 第28回電子材料シンポジウム, J4, July 2009.
• 大島孝仁, 奥野剛也, 新井直樹, 竹田聡, 小林恭, 樋野治道, 藤田静雄. 酸化ガリウムを用いた殺菌ランプ監視用深紫外光検出システムの実用化, 平成20年度VBL研究助成成果報告会, June 2009.
• 大島 孝仁, 新井 直樹, 鈴木 悟仁, 大平 重男, 藤田 静雄. Schottky barrier diode based on β-Ga₂O₃, 第27回電子材料シンポジウム, J7, July 2008.

国内会議発表 (査読なし・不明)

• 竹田聡, 新井直樹, 小林恭, 樋野治道, 大島孝仁, 藤田静雄. Ga₂O₃紫外線センサの作製と連続監視システムへの応用, 2010年春季第57回応用物理学会関係連合講演会, 19p-TM-1, Mar. 2010.
• Hiroshi Ueda, Naoki Arai, Yuji Tamura, Eizo Miyashita. An alternative explanation of movement encoding in monkey's primary motor cortex using joint angular velocity and joint torque during reaching tasks, Neuro2010, Neuroscience Research, volume 68, Supplement 1, page e149, 2010.
• 大島 孝仁, 奥野 剛也, 新井 直樹, 竹田 聡, 小林 恭, 樋野 治道, 藤田 静雄. ワイドギャップ酸化物半導体β-Ga₂O₃を用いた炎センサ, 2009年秋季第70回応用物理学会学術講演会, 9p-J-1, Sept. 2009.
• 大島孝仁, 奥野剛也, 新井直樹, 竹田聡, 小林恭, 樋野治道, 藤田静雄. β-Ga₂O₃基板を用いて作製した炎センサ, 2009年春季第56回応用物理学関係連合講演会, 31p-ZK16, Mar. 2009.
• 大島孝仁, 奥野剛也, 新井直樹, 小林恭, 藤田静雄. 分子線エピタキシー法によるβ-Al_2rGa_2-2rO₃薄膜の作製, 2009年春季第56回応用物理学関連連合講演会, 31p-ZK-17, Mar. 2009.
• 大島孝仁, 奥野剛也, 新井直樹, 鈴木悟仁, 大平重男, 藤田静雄. β-Ga₂O₃基板を用いて作製したショットキーダイオードの破壊特性, 2008年秋季第69回応用物理学会学術講演会, 3a-ZR-7, Sept. 2008.
• 大島孝仁, 奥野剛也, 藤田静雄, 新井直樹, 鈴木悟仁, 大平重男. β-Ga₂O₃ 基板を利用した深紫外光検出器, 2008年春季第55回応用物理学会関係連合講演会, 28p-ZC-12, Mar. 2008.
• 大島孝仁, 藤田静雄, 新井直樹, 鈴木悟仁, 大平重男. 分子線エピタキシー法によるβ-Ga₂O₃ 基板上へのβ-Ga₂O₃ ステップフロー成長, 2008年春季第55回応用物理学会関係連合講演会, 28a-W-1, Mar. 2008.

[ BibTeX 形式で保存 ]    [ 論文・著書をCSV形式で保存 ]    [ 特許をCSV形式で保存 ]