論文

• T. Ohashi, K. Suda, S. Ishihara, N. Sawamoto, S. Yamaguchi, K. Matsuura, K. Kakushima, N. Sugii, A. Nishiyama, Y. Kataoka, K. Natori, K. Tsutsui, H. Iwai, A. Ogura, H. Wakabayashi. Multi-layered MoS2 film formed by high-temperature sputtering for enhancement-mode nMOSFETs, Japan Journal of Applied Physics, Vol. 54, No. 4S, Mar. 2015.
• "Yusuke Takei", "Masayuki Kamiya", "Kazuo Tsutsui", "Wataru Saito", "Kuniyuki Kakushima", "Hitoshi Wakabayashi", "Yoshinori Kataoka", "Hiroshi Iwai". Reduction of Contact Resistance on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers, Physica Status Solidi A, Vol. 212, No. 5, pp. 1104-1109, Feb. 2015.
• "Mokh Hadi", "Shinichi Kano", "Kuniyuki Kakushima", "Yoshinori Kataoka", "Akira Nishiyama", "Nobuyuki Sugii", "Hitoshi Wakabayashi", "Kazuo Tsutsui", "Kenji Natori", "Hiroshi Iwai". A resistive switching device based on breakdown and anodic reoxidization of thin SiO2 on Si-based Electrodes using CeOx buffer layer, Semiconductor Science and Technology, Vol. 29, No. 11, Oct. 2014.
• "Y. Wu", "H. Hasegawa", "K. Kakushima", "K. Ohmori", "T. Watanabe", "A. Nishiyama", "N. Sugii", "H. Wakabayashi", "K. Tsutsui", "Y. Kataoka", "K. Natori", "K. Yamada", "H. Iwai". A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability, Microelectronics Reliability, Vol. 54, No. 5, pp. 899-904, May 2014.
• "Yusuke Takei", "Mari Okamoto", "Wataru Saito", "Kazuo Tsutsui", "Kuniyuki Kakushima", "Hitoshi Wakabayashi", "Yoshinori Kataoka", "Hiroshi Iwai". Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures, ECS Transactions, Vol. 61, No. 4, pp. 265-270, May 2014.
• "Chunmeng Dou", "Tomoya Shoji", "Kazuhiro Nakajima", "Kuniyuki Kakushima", "Parhat Ahmet", "Yoshinori Kataoka", "Akira Nishiyama", "Nobuyuki Sugii", "Hitoshi Wakabayashi", "Kazuo Tsutsui", "Kenji Natori", "Hiroshi Iwai". Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement, Microelectronics Reliability, Vol. 54, pp. 725-729, Apr. 2014.
• "T. Kawanago", "K. Kakushima", "Y. Kataoka", "A. Nishiyama", "N. Sugii", "H. Wakabayashi", "K. Tsutsui", "K. Natori", "H. Iwai". Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT, IEEE Transaction on Electron Devices(T-ED), Vol. 61, No. 3, pp. 785-791, Feb. 2014.
• "K. Tuokedaerhan", "K. Kakushima", "Y. Kataoka", "A. Nishiyama", "N. Sugii", "H. Wakabayashi", "K. Tsutsui", "K. Natori", "H. Iwai". Atomically flat La-silicate/Si interface using tungsten carbide gate electrode with nano-sized grain, Applied Physics Letters (APL), Vol. 104, No. 2, Jan. 2014.
• "K. Tuokedaerhan", "R. Tan, K. Kakushima", "P. Ahmet", "Y. Kataoka", "A. Nishiyama", "N. Sugii", "H. Wakabayashi", "K. Tsutsui", "K. Natori", "T. Hattori", "H. Iwai". Stacked sputtering process for Ti, Ta, and W carbide formation for gate metal application, Applied Physics Letters (APL), Vol. 103, Sept. 2013.

国際会議発表 (査読有り)

• Kazuo Tsutsui, Masayuki Kamiya, Yusuke Takei, Wataru Saito, Kuniyuki Kakushima, Hitoshi Wakabayashi, Yoshinori Kataoka, Hiroshi Iwai. Low-resistive Contact Formation on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers, The International Workshop on Nitride Semiconductors (IWN2014), Aug. 2014.
• Y. Takei, M. Okamoto, W. Saito, K. Tsutsui, K. Kakushima, H. Wakabayashi, Y. Kataoka, H. Iwai. Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures, 225th ECS Meeting, May 2014.
• T. Ohashi, H. Wakabayashi, K. Kakushima, N. Sugii, A. Nishiyama, Y. Kataoka, K. Natori, K. Tsutsui, H. Iwai. Performance Prediction on n-MOSFET using Single-Layer MoS2 Channel, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• T. Ohashi, K. Suda, S. Ishihara, N. Sawamoto, S. Yamaguchi, K. Matsuura, K. Kakushima, N. Sugii, A. Nishiyama, Y. Kataoka, K. Natori, K. Tsutsui, H. Iwai, A. Ogura, Hitoshi Wakabayashi. Multi-Layered MoS2 Thin Film Formed by High-Temperature Sputtering for Enhancement-Mode nMOSFETs, International Conference on Solid State Devices and Materials, Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials, 1074, 2014.
• Atsushi Takemasa, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Electrical characteristics of n-type diamond contacts with Ti, Ni, NiSi2 and Ni3P electrodes, China Semiconductor Technology International Conference (CSTIC) 2014, 2014.
• Shuhei Hosoda, Kamale Tuokedaerhan, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai. Reliability of La-Silicate Mos Capacitors With Tungsten Carbide Gate Electrode, 224th ECS Meeting in San Francisco, Oct. 2013.
• T. Seki, T. Kawanago, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai. Electrical and Infrared Absorption Studies on La-silicate/Si Interface, IEEE 2nd Int. Symp. on Next Generation Electronics (ISNE 2013), Feb. 2013.
• T. Kamale, R. Tan, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai. Interface Properties La-Silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT, PRiME 2012, Oct. 2012.
• Y. Tanaka, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, S. Yamasaki, H. Iwai. TiC Electrode Formed by Multi-Stacking Process for Diamond Contact Metal, PRiME 2012, Oct. 2012.
• S. Kano, C. Dou, M. Hadi, K. Kakushima, P. Ahmet, A. Nishiyama, N. Sugii, K. Tsutsui, Y. Kataoka, K. Natori, E. Miranda, T. Hattori, H. Iwai. Influence of Electrode Material for CaOx Based Resistive Switching, China Semiconductor Technology International Conference (CSTIC), Mar. 2012.
• T. Kawanago, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai. (100)- and (110)-Oriented nMOSFETs with Highly Scaled EOT in La-Silicate/Si Interface for Multi-Gate Architecture, 42nd European Solid-State Device Research Conference (ESSDERC 2012), 2012.

国際会議発表 (査読なし・不明)

• Y. Ito, H. Hori, K. Tsutsui, K. Kakushima, H. Wakabayashi, Y.Kataoka, A.Nishiyama, N. Sugii, K. Natori, H. Iwai. Proposal of junction formation process for solar cells made of silicon microstructures, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• M. Kamiya, Y. Takei, W. Saito, K. Kakushima, H. Wakabayashi, Y. Kataoka, K. Tsutsui, H. Iwai. Evaluation of 2DEG distribution on AlGaN/GaN HEMTs introducing uneven AlGaN layers and its possibility for low-resistive contacts formation, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• T. Kato, T.Inamura, A.Sasaki, K.Aoki, K.Kakushima, Y.Kataoka, A. Nishiyama, N. Sugii, H.Wakabayashi, K. Tsutsui, K. Natori, H. Iwai. Thickness-dependent electrical characterization of β‐FeSi2, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• M. Motoki, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H.Wakabayashi, K. Tsutsui, K. Natori, H. Iwai. Effect of Annealing Temperature on Sheet Resistance of Ni Germanide Formed by Multi-Layered Ni and Ge Films, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Yokohama, Feb. 2014.
• H. Hasegawa, Y.Wu, J.Song, K. Kakushima, Y.Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai. Improvement of tunnel FET performance using narrow bandgap semiconductor silicide /Si hetero-structure source electrod, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• Y. Nakamura, K. Kakushima, Y. Kataoka, A. Nishiyama, H. Wakabayashi, N. Sugii, K. Tsutsui, K. Natori, H. Iwai. Measurement of flat-band voltage shift using multi-stacked dielectric film, The Workshop on Future Trend of Nanoelectronics: WIMNACT, Feb. 2014.
• M. Okamoto, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, H. Iwai, W. Saito. An Ohmic contact process for AlGaN/GaN Structures using TiSi2 electrodes, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• Hayato Hori, Yuuma Itou, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, HIROSHI IWAI. Effects of substrate back bias on solar cells formed on thin SOI structures, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• 吉原亮, Masaaki Motoki, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Interface control process toward un-pinned metal/germanium Schottky contact, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• 宋 禛漢, Kazuki Matsumoto, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Reduction of the resistivities of Ni Silicide formed by the reaction of Si nanowire and Ni thin films, J. Song, K. Matsumoto, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai, “Reduction of the resistivities of Ni Silicide formed by the reaction of Si nanowire and Ni thin films”, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, February 7, 2014, Suzukake Hall, Suzukakedai Campus, Tokyo Institute of Technology, Japan, 2014.
• Hiroaki Imamura, Taichi Inamura, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Characterization of Thin NiSi2 Films by Stacked Silicidation Sputtering Process with Kr Gas, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Tomoya Shoji, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Silicon Nanowire Solar Cells: Surface Passivation and Interface Analysis, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Hiroki Hasegawa, Y. Wu, 宋 禛漢, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Masaaki Motoki, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Dependence between Sheet Resistance and Annealing Temperature of Ni Germanide Formed by Multi-Layered Ni and Ge Films, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• 雷 一鳴, Shu Munekiyo, Kuniyuki KAKUSHIMA, Takamasa Kawanago, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI, M. Furuhashi, N. Miura, S. Yamakawa. Interface reaction analysis of La2O3/SiC upon annealing by ATR-FTIR, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, February 7, 2014, Suzukake Hall, Suzukakedai Campus, Tokyo Institute of Technology, Japan, 2014.
• Takafumi Katou, Taichi Inamura, 佐々木亮人, 青木克明, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. Electrical characteristic of b-FeSi2, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Yoshihiro Matsukawa, Mari Okamoto, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. An Ohmic Contact Process for AlGaN/GaN Structures using TiCElectrode, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Yusuke Takei, Mari Okamoto, S. Man, Ryosuke Kayanuma, Masayuki Kamiya, 齋藤渉, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, Yoshinori Kataoka, HIROSHI IWAI. Contact resistances depending on AlGaN layer thickness for AlGaN/GaN HEMT structures, The Workshop on Future Trend of Nanoelectronics:WIMNACT, 2014.
• Masayuki Kamiya, Yusuke Takei, 齋藤渉, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, Yoshinori Kataoka, HIROSHI IWAI. Evaluation of 2DEG distribution on AlGaN/GaN HEMTs introducing uneven AlGaN layers and its possibility for low-resistive contacts formation, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Yuuma Itou, Hayato Hori, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, HIROSHI IWAI. Schottky barrier height reduction process for silicide/Si interfaces, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Sin Man, Rei Kayanuma, Yusuke Takei, T. Takahashi, M. Shimizu, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, Yoshinori Kataoka, HIROSHI IWAI. A Study on the Fabrication of GaN-FinFET Using Selective Area Growth Method, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.
• Takumi Ohashi, Hitoshi Wakabayashi, Kuniyuki KAKUSHIMA, Nobuyuki Sugii, Akira Nishiyama, Yoshinori Kataoka, Kenji Natori, KAZUO TSUTSUI, HIROSHI IWAI. Performance Prediction on n-MOSFET using Single-Layer MoS2 Channel, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, 2014.

国内会議発表 (査読なし・不明)

• Chunmeng Dou, Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai. Determination of oxide traps distribution in high-k/InGaAs MOS capacitor by capacitance-voltage measurement, The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Feb. 2014.
• Tuokedaerhan Kamale, Shuhei Hosoda, Kuniyuki KAKUSHIMA, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI. W2Cゲート電極によるLa-silicate MOSFETの移動度改善, 第61回応用物理学会春季学術講演会, 2014.
• 呉研, 長谷川明紀, 角嶋邦之, 渡辺 孝信, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. Mg2Si-Siヘテロ接合トンネルFET特性の構造依存性, 第61回応用物理学会春季学術講演会, 2014.
• 陳江寧, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋, 齋藤渉. La2O３ゲート絶縁膜を用いたAlGaN/GaNデバイスのプロセス依存性, 第61回応用物理学会春季学術講演会, 2014.
• LiWei, 佐々木亮人, 大図 秀行, 青木克明, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. 単斜晶WO3薄膜抵抗率の熱処理依存性, 第61回応用物理学会春季学術講演会, 2014.
• 大嶺洋, ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ, 角嶋邦之, 西山彰, 杉井信之, 片岡好則, 若林整, 筒井一生, 名取研二, 岩井洋. La2O３/ InGaAs界面ラフネスに及ぼすALDプロセスの影響, 第61回応用物理学会春季学術講演会, 2014.
• 関拓也, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. Si(110),(111)基盤上で熱処理による界面反応で形成したLa-silicateゲート絶縁膜の物理的理解に関する研究, 第61回応用物理学会春季学術講演会, 2014.
• 細田修平, Tuokedaerhan Kamale, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. W2C電極導入によるLa-silicate/Siにおける平坦な界面の実現, 第61回応用物理学会春季学術講演会, 2014.
• 吉原亮, 元木雅章, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. Pを導入したNiSi2/n-Geコンタクトの電気特性と不純物拡散の様子, 第61回応用物理学会春季学術講演会, 2014.
• 今村浩章, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. 積層シリサイド化スパッタプロセスにより作成したNiシリサイドショットキーダイオードの評価, 第61回応用物理学会春季学術講演会, 2014.
• 小路智也, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. Siナノワイヤー曲面における保護膜界面準位密度の研究, 第61回応用物理学会春季学術講演会, 2014.
• 長谷川明紀, 呉研, 宋 禛漢, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. Mg/Si極薄膜積層の熱処理を用いて作製したMg2Siの赤外線吸収特性評価, 第61回応用物理学会春季学術講演会, 2014.
• 元木雅章, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. NiとGe積層薄膜によって形成したNiGe膜のシート抵抗と熱処理温度の関係, 第61回応用物理学会春季学術講演会（2014年3月17日～3月20日）, 2014.
• 譚錫昊, 川那子高暢, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. 高電圧ストレスによるAlGaN/GaNの界面とバルクトラップの測定に関する研究, 第61回応用物理学会春季学術講演会, 2014.
• 劉 璞誠, 竇春萌, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋. コンダクタンス法によるAlGaN/GaNヘテロ接合界面トラップに関する研究, 第61回応用物理学会春季学術講演会, 2014.
• 雷 一鳴, 宗清修, 角嶋邦之, 川那子高暢, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋, 古橋 壮之, 三浦 成久, 山川 聡. ATR-FTIR法を用いた熱処理によるLa2O3/SiC界面反応の解析, 第61回応用物理学会春季学術講演会, 2014.
• 佐々木亮人, 青木克明, 片岡好則, 小林 薫平, 稲村太一, 角嶋邦之, 岩井洋. バリウムシリサイド半導体を用いたショットキー型太陽電池に関する研究, 第61回応用物理学会春季学術講演会, 2014.
• 武井優典, 岡本真里, マンシン, 萱沼怜, 神谷真行, 齋藤渉, 筒井一生, 角嶋邦之, 若林整, 片岡好則, 岩井洋. AlGaN/GaN系2次元電子ガスへのコンタクト特性における電極材料およびAlGaN膜厚依存性, 第61回応用物理学会春季学術講演会, 2014.
• 堀隼人, 伊藤勇磨, 筒井一生, 角嶋邦之, 若林整, 片岡好則, 西山彰, 杉井信之, 名取研二, 岩井洋. 薄膜SOI太陽電池の発電特性への基板バイアス効果, 第61回応用物理学会春季学術講演会, 2014.
• 神谷真行, 武井優典, 齋藤渉, 角嶋邦之, 若林整, 片岡好則, 筒井一生, 岩井洋. AlGaN/GaN高電子移動度トランジスタへの凹凸AlGaN層導入による低抵抗コンタクト形成の可能性, 第61回応用物理学会春季学術講演会, 2014.
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