論文

• Toshihiro Sugii, Takashi Ito, Hajime Ishikawa. Low-Temperature Fabrication of Silicon Nitride Films by ArF Excimer Laser lrradiation, Japanese Journal of Applied Physics, The Japan Society of Applied Phisics, Vol. A, No. 46, pp. 249-253, 1988.
• Takashi Ito, Hiroshi Horie, Tetsu Fukano, Hajime Ishikawa. A Nitride-Isolated Molybdenum-Polysilicon Gate Electrode for MOS VLSI Circuits, IEE Trans Electron Devices, IEEE Electron Devices Society, Vol. ED-33, No. 4, pp. 464-468, Apr. 1986.
• Toshihiro Sugii, Takashi Ito, Hajime Ishikawa. Excimer Laser Enhanced Nitridation of Silicon Substrates, Applied Phisics Letters, American Institute of Physics, Vol. 49, No. 9, pp. 966-968, Nov. 1984.
• Ichiro Kato, Takashi Ito, Tetsuo Nakamura, Hajime Ishikawa. Characteristics of Thermally Nitrided Silicon Dioxide Film and Plasma Enhancement, Journal of Electronic Materials, Springer, Vol. 13, No. 6, pp. 913-929, Aug. 1984.
• Takashi Ito, Tetsuo Nakamura, Hajime Ishikawa. Advantages of Thermal Nitride and Nirtoxide Gate Films in VLSI Process, IEEE Transactions on Electron Devices, IEEE Electron Devices Society, Vol. ED-29, No. 4, pp. 498-502, Apr. 1982.
• Shinpei Hijiya, Takashi Ito, Tetsuo Nakamura, Hajime Ishikawa, Hideki Arakawa. A Nitride Barrier Avalanche Injection EAROM, IEEE Journal of Solid-State Circuits, IEEE Solid-State Circuits Society, Vol. SC-17, No. 5, pp. 852-856, 1982.
• Ichiro Kato, Takashi Ito, Shnichi Inoue, Tetsuo Nakamura, Hajime Ishikawa. Ammonia Annealed SiO2 Films for Thin Gate Insulators, Japanese Journal of Applied Physics. Supplement, The Japan Society of Applied Phisics, Vol. 21-1, pp. 153-158, 1982.
• Takashi Ito, Tetsuo Nakamura, Hajime Ishikawa. Effect of Thermally Nitrided SiO2 (Nirtoxide) on MOS Charactristics, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 129, No. 1, pp. 184-188, 1982.
• Takashi Ito, Ichiro Kato, Takao Nozak, Tetsuo Nakamura, Hajime Ishikawa. Plasma enhanced Thermal Nitridation of Silicon, Applied Phisics Letters, American Institute of Physics, Vol. 38, No. 5, pp. 370-372, 1981.
• Takashi Ito, Hajime Ishikawa, Yukio Fukukawa. Thermal Nitridation of Silicon in Advanced LSI Processing, Japanese Journal of Applied Physics. Supplement, The Japan Society of Applied Phisics, Vol. 20-1, pp. 33-38, 1980.
• Takashi Ito, Takao Nozaki, Hajime Ishikawa. Direct Thermal Nitridation of Silicon Dioxide Films in Ammonia Gas, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 127, No. 9, pp. 2053-2057, 1980.
• Takashi Ito, Hideki Arakawa, Takao Nozaki, Hajime Ishikawa. Retardation of Destructive Breakdown of SiO2 Films Annealed in Ammonia Gas, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 127, No. 10, pp. 2248-2251, 1980.

国際会議発表 (査読有り)

• Takashi Ito, Tatsuya Yamazaki, Satoru Watanabe, Yasuo Nara, Hajime Ishikawa. Photoenhancement in Low-Temperature Silicon Epitaxy, Proc. Int. Symp. on Advanced Materials for ULSI, 1988 ECS Spring Meeting, Proc. Int. Symp. on Advanced Materials for ULSI, 1988 ECS Spring Meeting, No. 183, p. 285, 1998.
• Kunihiro Suzuki, Tetsu Fukano, Tatsuya Yamazaki, Shinpei Hijiya, Takashi Ito, Hajime Ishikawa. Pseudo-HBT with Polysilicon Emitter Contact and an Ultra shallow Highly Doped Base by Photoepitaxy, Tech. Dig. of, IEDM, Tech. Dig. of, IEDM, pp. 811-813, 1998.
• Kunihiro Suzuki, Tetsu Fukano, Hiroshi Ishiwari, Tatsuya Yamazaki, Masao Taguchi, Takashi Ito, Hajime Ishikawa. 50nm Ultra Thin Base Silicon Bipolar. Device Fabrication Based on Photo-epitaxial Growth, Digest of Symp. on VLSI Technology, Digest of Symp. on VLSI Technology, pp. 91-93, 1989.
• Takashi Kato, Takashi Ito, Hajime Ishikawa. In Situ,Carbon-Doped Aluminum Metallization for VLSI/ULSI Interconnection, Tech. Dig. of IEDM, Tech. Dig. of IEDM, pp. 458-460, 1988.
• Takashi Ito, Hajime Ishikawa. Current Status of Surface Nitridation on Silicon and Silicon-Dioxide, Proc. 5th Int. Symp. on Silicon Mat. Sci, and Tech., ECS Fall Meeting, Proc. 5th Int. Symp. on Silicon Mat. Sci, and Tech., ECS Fall Meeting, pp. 484-497, 1986.
• Takashi Ito, Hajime Ishikawa. Thermal Nitridation Technologies for VLSI, Proc. Int. Conf. on Semicon. and Integrated Circ. Tech., Proc. Int. Conf. on Semicon. and Integrated Circ. Tech., pp. 53-54, 1986.
• Tatsuya Yamazaki, Rinshi Sugino, Takashi Ito, Hajime Ishikawa. Photo-Chemical Effects for Low Temperature Si Epitaxy, Ext. Abst. of 1986 Int. Conf. on SSDM, Ext. Abst. of 1986 Int. Conf. on SSDM, pp. 213-214, 1986.
• Masaru Muto, Takashi Kato, Takashi Ito, Hajime Ishikawa. ZrSi2 for LSI Contat System, Proc. of Tech. papers on Int. Symp. on VLSI Tech. Sys. and Appli., Proc. of Tech. papers on Int. Symp. on VLSI Tech. Sys. and Appli., pp. 143-144, 1985.
• Takashi Ito, Hiroshi Horie, Tetsu Fukano, Hajime Ishikawa. A Nitride Isolated Molybdenum-Polysilicon Gate Electrode, Dig. of Tech. Papers on 1985 Symp. on VLSI Tech., Dig. of Tech. Papers on 1985 Symp. on VLSI Tech., pp. 60-61, 1985.
• Masaru Muto, Takashi Kato, Takashi Ito, Hajime Ishikawa. Self-aligned Silicidation of Zr and Its Comparison with Ti, Ext. Abst. of 17th Conf. on SSDM, Ext. Abst. of 17th Conf. on SSDM, 1985.
• Takashi Ito, Ichiro Kato, Hajime Ishikawa. Plasma Enhancement in Direct Nitridation of Silicon and Silicon-Dioxide, MRS Symp. Proc. 38, MRS Symp. Proc. 38, pp. 474-485, 1985.
• Toshihiro Sugii, Takashi Ito, Hajime Ishikawa. Low Temperature Nitridation of Silicon by Excimer Laser lrradiation, Ext. Abst. of 16th (1984 International Conf. on SSDM, Ext. Abst. of 16th (1984 International Conf. on SSDM, pp. 433-444, 1984.
• Tatsuya Yamazaki, Takashi Ito, Hajime Ishikawa. Disilane Photoepitaxy for VLSI, Dig. of Tech. Papers on 1984 Symp. on VLSI Tech., Dig. of Tech. Papers on 1984 Symp. on VLSI Tech., pp. 56-57, 1984.
• Tetsu Fukano, Takashi Ito, Tokushige Hisatsugu, Hajime Ishikawa. Ultra Sharp Trench Capacitors Formed by Peripheral Etching, Ext. Abst. of 16th (1984 International Conf. on SSDM, Ext. Abst. of 16th (1984 International Conf. on SSDM, pp. 471-472, 1984.
• Hiroshi Horie, Tetsu Fukano, Takashi Ito, Hajime Ishikawa. Multiple Self-Alignment MOS Technology (MUSA/MOS), Tech. Dig. of IEDM, Tech. Dig. of IEDM, pp. 398-401, 1984.
• Takashi Ito, Ichiro Kato, Tetsuo Nakamura, Hajime Ishikawa. Thermal Nitride Thin Films for VLSI Circuits, Proc. of Symp. on Silicon Nitride Thin Insulating Films, ECS, Proc. of Symp. on Silicon Nitride Thin Insulating Films, ECS, pp. 295-301, 1983.
• Kiyoshi Ozawa, Takashi Ito, Hajime Ishikawa. UV Resist Stripping for High Speed and Damage Free Process, Ext. Abst. of 15th Conf. on SSDM, Ext. Abst. of 15th Conf. on SSDM, pp. 125-126, 1983.
• Ichiro Kato, Takashi Ito, Tetsuo Nakamura, Hajime Ishikawa. Plasma Nitrided Silicon Dioxide Film for VLSI Gate Dielectrics, Elec. Mat. Conf., Elec. Mat. Conf., Vol. 6, No. 13, pp. 913-929, 1983.
• Takashi Kato, Takashi Ito, Masao Taguchi, Tetsuo Nakamura, Hajime Ishikawa. Interfacial Oxidation of Ta205-Si Systems for High Density DRAM, Dig. of Tech. Papers on 1983 Symp. on VLSI Tech., Dig. of Tech. Papers on 1983 Symp. on VLSI Tech., pp. 86-87, 1983.
• Shinpei Hijiya, Takashi Ito, Tetsuo Nakamura, Hajime Ishikawa, Hideki Arakawa. A Nitride Barrier Avalanche Injection EAROM, ISSCC Dig. of Tech. Papers, ISSCC Dig. of Tech. Papers, pp. 116-117, 1982.
• Ichiro Kato, Takashi Ito, Shinichi Inoue, Tetsuo Nakamura, Hajime Ishikawa. Ammonia Annealed SiO2. Films for Thin Gate Insulators, Ext. Abs. on 13th Conf. on SSDM, Ext. Abs. on 13th Conf. on SSDM, pp. 73-74, 1981.
• Takashi Ito, Tetsuo Nakamura, Hajime Ishikawa. Thin Gate Insulators for VLSI, Dig. of Tech. Papers on 1981 Symp. on VLSI Tech., Dig. of Tech. Papers on 1981 Symp. on VLSI Tech., pp. 72-73, 1981.
• Masao Taguchi, Takashi Ito, Tetsu Fukano, Tetsuo Nakamura, Hajime Ishikawa. Thermal Nitride Capacitors for High Density RAMs, Tech. Dig. of IEDM, Tech. Dig. of IEDM, pp. 400-403, 1981.
• Shinpei Hijiya, Takashi Ito, Tetsuo Nakamura, Nobuo Toyokura, Hajime Ishikawa. Electrically Alterable Read Only Memory Cell with Graded Energy Band-Gap Insulator, Tech. Dig. of IEDM, Tech. Dig. of IEDM, pp. 590-593, 1980.
• Takashi Ito, Hajime Ishikawa, Yukio Fukukawa. Thermal Nitridation of Silicon in Advanced LSI Processing, Ext. Abs. on 12th Conf. on SSDM, Ext. Abs. on 12th Conf. on SSDM, pp. 9-10, 1980.
• Takashi Ito, Takao Nozaki, Hajime Ishikawa, Yukio Fukukawa. Thermal Nitride Gate FET Technology for VLSI Devices, ISSCC Dig. of Tech. Papers, ISSCC Dig. of Tech. Papers, pp. 73-74, 1980.
• Takashi Ito, Shinpei Hijiya, Hajime Ishikawa, Masaichi Shinoda. 0V Write/Erase EAROM Cells with Directly Nitrided Silicon Nitride Films as First Insulating Layers, Tech. Dig. of IEDM, Tech. Dig. of IEDM, pp. 284-286, 1977.

国内会議発表 (査読有り)

• Tetsu Fukano, Takashi Ito, Hajime Ishikawa. Microwave Annealing for Low Temperature VLSI Processing, Tech. Dig. of IEDM, pp. 224-225, 1985.

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