論文

• Yiming Lei, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Masayuki Furuhashi, Shingo Tomohisa, Satoshi Yamakawa, Kuniyuki Kakushima. Effect of Lanthanum Silicate Interface Layer on the Electrical Characteristics of 4H-SiC Metal-Oxide-Semiconductor Capacitors, Microelectronics Reliability, vol. 84, pp. 248-252, May 2018.
• Yiming Lei, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Masayuki Furuhashi, Shingo Tomohisa, Satoshi Yamakaw, Kuniyuki Kakushima. Improvement of SiO2/4H-SiC Interface properties by post-metallization annealing, Microelectronics Reliability, vol. 84, pp. 226-229, May 2018.

国際会議発表 (査読有り)

• Y. M. Lei, T. Kaneko, H. Wakabayashi, K. Tsutsui, H. Iwai, K. Kakushima, M. Furuhashi, S. Tomohisa, S. Yamakawa. Influence of Interface ALD-SiO2 Layer for Lanthanum Silicate Gate Dielectrics for 4H-SiC MOS Capacitors, 47th IEEE Semiconductor Interface Specialists Conference (SISC2016), Dec. 2016.
• Hiroyuki Yamada, Shiro Hino, Naruhisa Miura, Masayuki Imaizumi, Satoshi Yamakawa, EISUKE TOKUMITSU. Fabrication of 4H-SiC MOSFETs Using Stacked Al2O3 Gate Insulator with Pre-Annealed Al2O3 Buffer Layer, The International Conference on Silicon Carbide and Related Materials 2013, Oct. 2013.

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