論文

• "Chunmeng Dou", "Tomoya Shoji", "Kazuhiro Nakajima", "Kuniyuki Kakushima", "Parhat Ahmet", "Yoshinori Kataoka", "Akira Nishiyama", "Nobuyuki Sugii", "Hitoshi Wakabayashi", "Kazuo Tsutsui", "Kenji Natori", "Hiroshi Iwai". Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement, Microelectronics Reliability, Vol. 54, pp. 725-729, Apr. 2014.
• "K. Tuokedaerhan", "R. Tan, K. Kakushima", "P. Ahmet", "Y. Kataoka", "A. Nishiyama", "N. Sugii", "H. Wakabayashi", "K. Tsutsui", "K. Natori", "T. Hattori", "H. Iwai". Stacked sputtering process for Ti, Ta, and W carbide formation for gate metal application, Applied Physics Letters (APL), Vol. 103, Sept. 2013.
• KAZUO TSUTSUI, Kuniyuki KAKUSHIMA, PARHAT AHMET, HIROSHI IWAI. Analysis of irregular increase in sheet resistance of Ni silicides on transition from NiSi to NiSi2, Microelectronic Engineering, Vol. 85, pp. 315-319, Feb. 2008.
• Yusuke Kobayashi, C. Raghunathan Manoj, Kazuo Tsutsui, Venkanarayan Hariharan, Kuniyuki Kakushima, V.Ramgopal Rao, Parhat Ahmet, Hiroshi Iwai. Parasitic Effects in Multi-Gate MOSFETs, IEICE TRANS. ELECTRON, Vol. E90-C, No. 10, pp. 2051-2056, Oct. 2007.

国際会議発表 (査読有り)

• T. Seki, T. Kawanago, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai. Electrical and Infrared Absorption Studies on La-silicate/Si Interface, IEEE 2nd Int. Symp. on Next Generation Electronics (ISNE 2013), Feb. 2013.
• T. Kamale, R. Tan, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai. Interface Properties La-Silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT, PRiME 2012, Oct. 2012.
• Y. Tanaka, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, S. Yamasaki, H. Iwai. TiC Electrode Formed by Multi-Stacking Process for Diamond Contact Metal, PRiME 2012, Oct. 2012.
• Youhei Miyata, Jun Kanehara, Hiroshi Nohira, Yudai Izumi, Takayuki Muro, Toyohiko Kinoshita, Parhat Ahmet, Kuniyuki Kakushima, Kazuo Tsutsui, Takeo Hattori1, Hiroshi Iwai. Analysis of Chemical Bonding States of Boron Doped in Si Fin Structures: Selective Observation on Top Surfaces and Sidewalls, 12th Int. Workshop on Junction Technology (IWJT2012), May 2012.
• S. Kano, C. Dou, M. Hadi, K. Kakushima, P. Ahmet, A. Nishiyama, N. Sugii, K. Tsutsui, Y. Kataoka, K. Natori, E. Miranda, T. Hattori, H. Iwai. Influence of Electrode Material for CaOx Based Resistive Switching, China Semiconductor Technology International Conference (CSTIC), Mar. 2012.
• T. Kawanago, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai. (100)- and (110)-Oriented nMOSFETs with Highly Scaled EOT in La-Silicate/Si Interface for Multi-Gate Architecture, 42nd European Solid-State Device Research Conference (ESSDERC 2012), 2012.
• Jun Kanehara, Youhei Miyata, Hiroshi Nohira, Yudai Izumi, Takayuki Muro, Toyohiko Kinoshita, Parhat Ahmet, Kuniyuki Kakushima, Kazuo Tsutsui, Takeo Hattori, Hiroshi Iwai. Chemical Bonding States of As in Si Shallow Junctions Detected by Soft X-ray Photoelectron Spectroscopy and their Profiles, 2011 Int. Conf. on Solid State Devices and Materials (SSDM 2011), Sept. 2011.
• K. Kakushima, J. Kanehara, Y. Izumi, T. Muro, T. Kinoshita, P. Ahmet, K. Tsutsui, T. Hattori, H. Iwai. Concentration Depth Profiling of Heavily Doped Boron at and near SiO2/Si Interface by Angle-resolved Soft X-ray Photoelectron Spectroscopy, 2011 Int. Conf. on Solid State Devices and Materials (SSDM 2011), Sept. 2011.
• Youhei Miyata, Jun Kanehara, Hiroshi Nohira, Yudai Izumi, Takayuki Muro, Toyohiko Kinoshita, Parhat Ahmet, Kuniyuki Kakushima, Kazuo Tsutsui, Takeo Hattori, Hiroshi Iwai. Soft X-ray Photoelectron Spectroscopy on Chemical Bonding States of Boron Doped in Si Fin Structures, 2011 Int. Conf. on Solid State Devices and Materials (SSDM 2011), Sept. 2011.
• D. Kitayama, T. Koyanagi, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai. TiN Capping Effect on High Temperature Annealed RE-Oxide Devices for Scaled EOT, 218th ECS Meeting, Oct. 2010.
• H. Nakayama, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai. Electrical Characteristics of La2O3 Gated MOS Capacitors with Different Wafer Orientation, 216th ECS Meeting, 2009.
• M. Kouda, K. Tachi, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. Chandorkar, T. Hattori, H. Iwai. Electric Properties of CeOX /La2O3 Stack as Gate Dielectric in Advanced MOSFET Technology, 214th ECS Meeting (PRiME 2008), Oct. 2008.
• H. Nohira, Y. Takenaga, K. Kakushima, P. Ahmet, K. Tsutsui, H. Iwai. Annealing-temperature Dependence of Compositional Depth Profile and Chemical Structures of LaOx/ScOx/Si and ScOx/LaOx/Si Interfacial Transition Layer, 214th ECS Meeting (PRiME 2008), Oct. 2008.
• K. Okamoto, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. Chandorkar, T. Hattori, H. Iwai. 0.5 nm EOT MOS Structure with TaSix/W Stacked Gate Electrode, 214th ECS Meeting (PRiME 2008), Oct. 2008.
• Y. Kobayashi, A. B. Sachid, K. Tsutsui, K. Kakushima, P. Ahmet, V. R. Rao, H. Iwai. Analysis of Threshold Voltage Variations of FinFETs Relating to Short Channel Effects, 214th ECS Meeting (PRiME 2008), Oct. 2008.
• M. Hino, K. Nagata, T. Yoshida, D. Kosemura, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. Ogura, T. Hattori, H. Iwai. Study on Stress Memorization by Argon Implantation and Annealing, 214th ECS Meeting (PRiME 2008), Oct. 2008.
• Parhat Ahmet, Takashi Shiozawa, Koji Nagahiro, Takahiro Nagata, Kuniyuki Kakushima, Kazuo Tsutsui, Toyohiro Chikyow, Hiroshi Iwai. Ni silicidation on Heavily Doped Si Substrates, The 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT 2008), Oct. 2008.
• K. Noguchi, W. Hosoda, K. Matano, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. Chandorkar, T. Hattori, H. Iwai. Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs, 214th ECS Meeting (PRiME 2008), Oct. 2008.
• K. Kakushima, K. Okamoto, K. Tachi, S. Sato, J. Song, T. Kawanago, P. Ahmet, N. Sugii, K. Tsutsui, T. Hattori, H. Iwai. Interfacial Dipole Measurement of Dielectric/Silicon Interface by X-ray Photoelectron Spectroscopy, 214th ECS Meeting (PRiME 2008), Oct. 2008.
• K. Tsutsui, M. Watanabe, Y. Nakagawa, T. Matsuda, Y. Yoshida, E. Ikenaga, K. Kakushima, P. Ahmet, H. Nohira, T. Maruizumi, A. Ogura, T. Hattori, H. Iwai. New Analysis of Heavily Doped Boron and Arsenic in Shallow Junctions by X-Ray Photoelectron Spectroscopy, the 38th European Solid-State Device Research Conference (ESSDERC2008), Sept. 2008.
• Y. Kobayashi, K. Tsutsui, K. Kakushima, P. Ahmet, V. R. Rao, H. Iwai. Analysis of Threshold Voltage Variations of FinFETs : Separation of Short Channel Effects and Space Charge Effects, Int. Conf. on Solid State Devices and Materials (SSDM2008), Sept. 2008.
• K. Kakushima, K. Tachi, M. Adachi, K. Okamoto, S. Sato, J. Song, T. Kawanago, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai. Advantage of La2O3 Gate Dielectric Over HfO2 for Direct Contact and Mobility Improvment, the 38th European Solid-State Device Research Conference (ESSDERC2008), Sept. 2008.
• Yoshisa Ohishi, Kohei Noguchi, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai. Schottky Barrier Height Modulation of Ni Silicide/Si Contacts by Insertion of Thin Er or Pt Layers, 7th Int. Semiconductor Technology Conference (ECS-ISTC2008), May 2008.
• K. Kakushima, K. Okamoto, M. Adachi, K. Tachi, S. Sato, T. Kawanago, J. Song, P. Ahmet, N. Sugii, K. Tsutsui, T. Hattori, H. Iwai. Impact of Thin La2O3 Insertion for HfO2 MOSFET, 213th ECS Meeting, May 2008.
• K. Tsutsui, T. Shiozawa, K. Nagahiro, Y. Ohishi, K. Kakushima, P. Ahmet, N. Urushihara, M. Suzuki, H. Iwai. Effects of B or Al Interface Layers on Thermal Stability of Ni Silicide on Si, 213th ECS Meeting, May 2008.
• Kazuo Tsutsui, Masamitsu Watanabe, Yasumasa Nakagawa, Kazunori Sakai, Takayuki Kai, Cheng-Guo Jin, Yuichiro Sasaki, Kuniyuki Kakushima, Parhat Ahmet, Bunji Mizuno, Takeo Hattori, Hiroshi Iwai.. Profiling of Carrier Properties for Shallow Junctions Using a New Sub-nanometer Step-by-step Etching Technique, The 8th International Workshop on Junction Technology (IWJT2008), May 2008.
• Kuniyuki Kakushima, Kouichi Okamoto, Manabu Adachi, Kiichi Tachi, Jaeyeol Song, Soushi Sato, Takamasa Kawanago, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai. Band Bending Measurement of HfO2/SiO2/Si Capacitor with ultra-thin La2O3 Insertion by XPS, Fifth International Symposium on Control of Semiconductor Interfaces (ISCSI2007), Nov. 2007.
• M.Adachi, K.Okamoto, K.Kakushima, P.Ahmet, K.Tsutsui, N.Sugii, T.Hattori, H.Iwai. Control of Flat Band Voltage by Partial Incorporation of La2O3 or Sc2O3 into MfO2 in Metal/MfO2/SiO2/Si MOS Capacitors, ECS Transactions:Physics and Technology of High-k Gate Dielectrics 5, The Electrochemikal Society, Vol. 11, No. 4, pp. 157-167, Oct. 2007.
• K.Tachi, K.Kakushima, P.Ahmet, K.Tsutsui, N.Sugii, T.Hattori, H.Iwai. Improvement of Interface Properties of W/La2O3/Si MOS Structure Usin AI Capping Layer, ECS Transactions, The Electrochmical Society, Vol. 11, No. 4, pp. 191-198, Oct. 2007.
• K.Tsutsui, K.Nagahiro, T.Shiozawa, P.Ahmet, K.Kakushima, H.Iwai. Improvement of Thermal Stability of Ni Silcide by Additive Metals with Specific Introduction Processes, ECS Transactions:ULSI Process Integration 5, The Electrochemical Society, Vol. 11, No. 6, pp. 207-213, Oct. 2007.
• [323] K.Tsutsui, K.Nagahiro, T.Shiozawa, P.Ahmet, K.Kakushima, H.Iwai. Improvement of Thermal Stability of Ni Silcide by Additive Metals with Specific Introduction Processes, ECS 212th Meeting, Vol. 11, No. 6, pp. 207-213, Oct. 2007.
• [320] Koichi Okamoto, Manabu Adachi, Kuniyuki Kakushima, Parhat Ahmet, Nobuyuki Sugii, Kazuo Tsutsui, Takeo Hattori, Hiroshi Iwai. Effective Control of Flat-band Voltage in HfO2 Gate Dielectric with La2O3 Incorporation, ESSDERC 2007, Sept. 2007.
• Y. Kobayashi, K. Tsutsui, K. Kakushima, V. Hariharan, V. R. Rao, P. Ahmet, H. Iwai. Parasitic Effects Depending on Shape of Spacer Region on FinFETs, 211th ECS Meeting, May 2007.
• Takashi Shiozawa, Koji Nagahiro, Kazuo Tsutsui, Parhat Ahmet, Kuniyuki Kakushima, Hiroshi Iwai. Improvement of Thermal Stability of Ni Silicide by Al Interlayer Deposition, ECS-ISTC2007, May 2007.

特許など

• 角嶋邦之, Dou Chunmeng, AHMETPARHAT, 岩井洋, 片岡　好則. 抵抗変化型記憶装置. 特許. 登録. 国立大学法人東京工業大学, 東芝マテリアル株式会社. 2013/03/12. 特願2014-504932. 2015/08/03. 再表2013/137262. 特許第6082383号. 2017/01/27 2017.
• AHMETPARHAT, マイマイティ マイマイティレシャティ, 岩井洋, 服部健雄, 筒井一生, 角嶋邦之. 半導体素子. 特許. 公開. 国立大学法人東京工業大学. 2011/12/27. 特願2011-285538. 2013/07/08. 特開2013-135135. 2013.

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