論文

• Yiming Lei, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Masayuki Furuhashi, Shingo Tomohisa, Satoshi Yamakawa, Kuniyuki Kakushima. Effect of Lanthanum Silicate Interface Layer on the Electrical Characteristics of 4H-SiC Metal-Oxide-Semiconductor Capacitors, Microelectronics Reliability, vol. 84, pp. 248-252, May 2018.
• Yiming Lei, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Masayuki Furuhashi, Shingo Tomohisa, Satoshi Yamakaw, Kuniyuki Kakushima. Improvement of SiO2/4H-SiC Interface properties by post-metallization annealing, Microelectronics Reliability, vol. 84, pp. 226-229, May 2018.
• "Chunmeng Dou", "Tomoya Shoji", "Kazuhiro Nakajima", "Kuniyuki Kakushima", "Parhat Ahmet", "Yoshinori Kataoka", "Akira Nishiyama", "Nobuyuki Sugii", "Hitoshi Wakabayashi", "Kazuo Tsutsui", "Kenji Natori", "Hiroshi Iwai". Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement, Microelectronics Reliability, Vol. 54, pp. 725-729, Apr. 2014.

国際会議発表 (査読有り)

• Takuya Saraya, Kazuo Ito, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Masanori Tsukuda, Katsumi Satoh, Tomoko Matsudai, Kuniyuki Kakushima, Takuya Hoshii, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Wataru Saito, Shin-ichi Nishizawa, Ichiro Omura, Hiromichi Ohashi, Toshiro Hiramoto. 3.3 kV Back-Gate-Controlled IGBT (BC-IGBT) Using Manufacturable Double-Side Process Technology, International Electron Devices Meeting (IEDM) 2020, Dec. 2020.
• K. Kakushima, T. Hoshii, M. Watanabe, N. Shigyo, K. Furukawa, T. Saraya, T. Takakura, K. Itou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, Y. Numasawa, A. Ogura, S. Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Iwai. New methodology for evaluating minority carrier lifetime for process assessment, Symp. On VLSI Technology (VLSI2018), June 2018.
• Suguru Tatsunokuchi, Iriya Muneta, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Kuniyuki Kakushima. Photovoltaic Properties of Lateral Si Nano Wall Solar Cells, 2017 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Tecnology (IWDTF 2017), Nov. 2017.
• Tomoyuki Suzuki, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Hiroshi Nohira, Kuniyuki Kakushima. Properties of SiC Schottky Junction with Laminated Molybdenum/Carbon Electrode, 47th IEEE Semiconductor Interface Specialists Conference (SISC2016), Dec. 2016.
• M. Okamoto, K. Kakushima, Y. Kataoka, K. Natori, H. Wakabayashi, K. Tsutsui, H. Iwai, W. Saito. Dependence of Ti/C Ratio on Ohmic contact with TiC electrode for AlGaN/GaN structure, WiPDA, Oct. 2014.
• T. Shoji, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai. Effect of Surface Potential Control and Interface States for Silicon Nanowire Solar Cells, 29th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2014), Sept. 2014.
• Kazuo Tsutsui, Masayuki Kamiya, Yusuke Takei, Wataru Saito, Kuniyuki Kakushima, Hitoshi Wakabayashi, Yoshinori Kataoka, Hiroshi Iwai. Low-resistive Contact Formation on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers, The International Workshop on Nitride Semiconductors (IWN2014), Aug. 2014.
• Y. Takei, M. Okamoto, W. Saito, K. Tsutsui, K. Kakushima, H. Wakabayashi, Y. Kataoka, H. Iwai. Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures, 225th ECS Meeting, May 2014.
• Akira Nakajima, Sin-ichi Nishizawa, Hiromichi Ohashi, Hiroaki Yonezawa, Kazuo Tsutsui, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai. One-Chip Operation of GaN-Based p-Channel and N-Channel Heterojunction Field Effect Transistors, The 26th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD2014), 2014.
• Shuhei Hosoda, Kamale Tuokedaerhan, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai. Reliability of La-Silicate Mos Capacitors With Tungsten Carbide Gate Electrode, 224th ECS Meeting in San Francisco, Oct. 2013.
• Youhei Miyata, Jun Kanehara, Hiroshi Nohira, Yudai Izumi, Takayuki Muro, Toyohiko Kinoshita, Parhat Ahmet, Kuniyuki Kakushima, Kazuo Tsutsui, Takeo Hattori1, Hiroshi Iwai. Analysis of Chemical Bonding States of Boron Doped in Si Fin Structures: Selective Observation on Top Surfaces and Sidewalls, 12th Int. Workshop on Junction Technology (IWJT2012), May 2012.
• Jun Kanehara, Youhei Miyata, Hiroshi Nohira, Yudai Izumi, Takayuki Muro, Toyohiko Kinoshita, Parhat Ahmet, Kuniyuki Kakushima, Kazuo Tsutsui, Takeo Hattori, Hiroshi Iwai. Chemical Bonding States of As in Si Shallow Junctions Detected by Soft X-ray Photoelectron Spectroscopy and their Profiles, 2011 Int. Conf. on Solid State Devices and Materials (SSDM 2011), Sept. 2011.
• Youhei Miyata, Jun Kanehara, Hiroshi Nohira, Yudai Izumi, Takayuki Muro, Toyohiko Kinoshita, Parhat Ahmet, Kuniyuki Kakushima, Kazuo Tsutsui, Takeo Hattori, Hiroshi Iwai. Soft X-ray Photoelectron Spectroscopy on Chemical Bonding States of Boron Doped in Si Fin Structures, 2011 Int. Conf. on Solid State Devices and Materials (SSDM 2011), Sept. 2011.
• Parhat Ahmet, Takashi Shiozawa, Koji Nagahiro, Takahiro Nagata, Kuniyuki Kakushima, Kazuo Tsutsui, Toyohiro Chikyow, Hiroshi Iwai. Ni silicidation on Heavily Doped Si Substrates, The 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT 2008), Oct. 2008.
• Yoshisa Ohishi, Kohei Noguchi, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai. Schottky Barrier Height Modulation of Ni Silicide/Si Contacts by Insertion of Thin Er or Pt Layers, 7th Int. Semiconductor Technology Conference (ECS-ISTC2008), May 2008.
• Kazuo Tsutsui, Masamitsu Watanabe, Yasumasa Nakagawa, Kazunori Sakai, Takayuki Kai, Cheng-Guo Jin, Yuichiro Sasaki, Kuniyuki Kakushima, Parhat Ahmet, Bunji Mizuno, Takeo Hattori, Hiroshi Iwai.. Profiling of Carrier Properties for Shallow Junctions Using a New Sub-nanometer Step-by-step Etching Technique, The 8th International Workshop on Junction Technology (IWJT2008), May 2008.
• Kuniyuki Kakushima, Kouichi Okamoto, Manabu Adachi, Kiichi Tachi, Jaeyeol Song, Soushi Sato, Takamasa Kawanago, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai. Band Bending Measurement of HfO2/SiO2/Si Capacitor with ultra-thin La2O3 Insertion by XPS, Fifth International Symposium on Control of Semiconductor Interfaces (ISCSI2007), Nov. 2007.
• Takashi Shiozawa, Koji Nagahiro, Kazuo Tsutsui, Parhat Ahmet, Kuniyuki Kakushima, Hiroshi Iwai. Improvement of Thermal Stability of Ni Silicide by Al Interlayer Deposition, ECS-ISTC2007, May 2007.
• J. Molina, K. Tachi, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, I. Hiroshi. Charge Trapping Characteristics of W-La2O3-nSi Mis Capacitors After Post-Metallization Annealing PMA in N2, 2006 Joint International Meeting of ECS, Oct. 2006.
• Youichi Kobayashi, Ruifei Xiang, Kazuo Tsutsui, Hiroshi Iwai. Formation of heat resistant Ni silicide by additional Hf layers, Materials for Advanced Metallization (MAM2005), Mar. 2005.
• Ikmi Kashiwagi, Chizuru Ohshima, Yongshik Kim, Shun-ichiro Ohmi, Kazuo Tsutsui, Hiroshi Iwai. Dependence of Gd2O3 Thin Film Properties on Si Substrate Orienteation, IEEE Workshop on Microelectronics and Electron Devices (uE-ED2002), Oct. 2002.

国際会議発表 (査読なし・不明)

• C. Y. Su, T. Hoshii, I. Muneta, H. Wakabayashi, K. Tsutsui, H. Iwai, K. Kakushima. Interface State Density of Atomic Layer Deposited Al2O3 on Beta-Ga2O3, ECS Meeting, May 2018.
• H. Kataoka, H. Iwai, T. Hoshii, I. Muneta, H. Wakabayashi, K. Tsutsui, H. Iwai, K. Kakushima. A Defect Density Profile Extraction Method for GaN Epi-Wafers, ECS Meeting, Apr. 2018.

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