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研究業績一覧 (41件)
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国際会議発表 (査読有り)
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T. Ohashi,
H. Wakabayashi,
K. Kakushima,
N. Sugii,
A. Nishiyama,
Y. Kataoka,
K. Natori,
K. Tsutsui,
H. Iwai.
Performance Prediction on n-MOSFET using Single-Layer MoS2 Channel,
The Workshop on Future Trend of Nanoelectronics: WIMNACT 39,
Feb. 2014.
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T. Seki,
T. Kawanago,
K. Kakushima,
P. Ahmet,
Y. Kataoka,
A. Nishiyama,
N. Sugii,
K. Tsutsui,
K. Natori,
T. Hattori,
H. Iwai.
Electrical and Infrared Absorption Studies on La-silicate/Si Interface,
IEEE 2nd Int. Symp. on Next Generation Electronics (ISNE 2013),
Feb. 2013.
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Y. Tanaka,
K. Kakushima,
P. Ahmet,
Y. Kataoka,
A. Nishiyama,
N. Sugii,
K. Tsutsui,
K. Natori,
T. Hattori,
S. Yamasaki,
H. Iwai.
TiC Electrode Formed by Multi-Stacking Process for Diamond Contact Metal,
PRiME 2012,
Oct. 2012.
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T. Kamale,
R. Tan,
K. Kakushima,
P. Ahmet,
Y. Kataoka,
A. Nishiyama,
N. Sugii,
K. Tsutsui,
K. Natori,
T. Hattori,
H. Iwai.
Interface Properties La-Silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT,
PRiME 2012,
Oct. 2012.
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S. Kano,
C. Dou,
M. Hadi,
K. Kakushima,
P. Ahmet,
A. Nishiyama,
N. Sugii,
K. Tsutsui,
Y. Kataoka,
K. Natori,
E. Miranda,
T. Hattori,
H. Iwai.
Influence of Electrode Material for CaOx Based Resistive Switching,
China Semiconductor Technology International Conference (CSTIC),
Mar. 2012.
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T. Kawanago,
K. Kakushima,
P. Ahmet,
Y. Kataoka,
A. Nishiyama,
N. Sugii,
K. Tsutsui,
K. Natori,
T. Hattori,
H. Iwai.
(100)- and (110)-Oriented nMOSFETs with Highly Scaled EOT in La-Silicate/Si Interface for Multi-Gate Architecture,
42nd European Solid-State Device Research Conference (ESSDERC 2012),
2012.
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K. Kakushima,
J. Kanehara,
Y. Izumi,
T. Muro,
T. Kinoshita,
P. Ahmet,
K. Tsutsui,
T. Hattori,
H. Iwai.
Concentration Depth Profiling of Heavily Doped Boron at and near SiO2/Si Interface by Angle-resolved Soft X-ray Photoelectron Spectroscopy,
2011 Int. Conf. on Solid State Devices and Materials (SSDM 2011),
Sept. 2011.
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D. Kitayama,
T. Koyanagi,
K. Kakushima,
P. Ahmet,
K. Tsutsui,
A. Nishiyama,
N. Sugii,
K. Natori,
T. Hattori,
H. Iwai.
TiN Capping Effect on High Temperature Annealed RE-Oxide Devices for Scaled EOT,
218th ECS Meeting,
Oct. 2010.
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H. Nakayama,
K. Kakushima,
P. Ahmet,
K. Tsutsui,
N. Sugii,
T. Hattori,
H. Iwai.
Electrical Characteristics of La2O3 Gated MOS Capacitors with Different Wafer Orientation,
216th ECS Meeting,
2009.
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K. Noguchi,
W. Hosoda,
K. Matano,
K. Kakushima,
P. Ahmet,
K. Tsutsui,
N. Sugii,
A. Chandorkar,
T. Hattori,
H. Iwai.
Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs,
214th ECS Meeting (PRiME 2008),
Oct. 2008.
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B. Mizuno,
Y. Sasaki,
C. G. Jin,
K. Okashita,
K. Nakamoto,
T. Kitaoka,
K. Tsutsui,
H. A. Sauddin,
H. Iwai.
Production-worthy approach of Plasma Doping (PD),
The 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT 2008),
Oct. 2008.
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M. Hino,
K. Nagata,
T. Yoshida,
D. Kosemura,
K. Kakushima,
P. Ahmet,
K. Tsutsui,
N. Sugii,
A. Ogura,
T. Hattori,
H. Iwai.
Study on Stress Memorization by Argon Implantation and Annealing,
214th ECS Meeting (PRiME 2008),
Oct. 2008.
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K. Kakushima,
K. Okamoto,
K. Tachi,
S. Sato,
J. Song,
T. Kawanago,
P. Ahmet,
N. Sugii,
K. Tsutsui,
T. Hattori,
H. Iwai.
Interfacial Dipole Measurement of Dielectric/Silicon Interface by X-ray Photoelectron Spectroscopy,
214th ECS Meeting (PRiME 2008),
Oct. 2008.
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M. Kouda,
K. Tachi,
K. Kakushima,
P. Ahmet,
K. Tsutsui,
N. Sugii,
A. Chandorkar,
T. Hattori,
H. Iwai.
Electric Properties of CeOX /La2O3 Stack as Gate Dielectric in Advanced MOSFET Technology,
214th ECS Meeting (PRiME 2008),
Oct. 2008.
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H. Nohira,
Y. Takenaga,
K. Kakushima,
P. Ahmet,
K. Tsutsui,
H. Iwai.
Annealing-temperature Dependence of Compositional Depth Profile and Chemical Structures of LaOx/ScOx/Si and ScOx/LaOx/Si Interfacial Transition Layer,
214th ECS Meeting (PRiME 2008),
Oct. 2008.
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K. Okamoto,
K. Kakushima,
P. Ahmet,
K. Tsutsui,
N. Sugii,
A. Chandorkar,
T. Hattori,
H. Iwai.
0.5 nm EOT MOS Structure with TaSix/W Stacked Gate Electrode,
214th ECS Meeting (PRiME 2008),
Oct. 2008.
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Y. Kobayashi,
A. B. Sachid,
K. Tsutsui,
K. Kakushima,
P. Ahmet,
V. R. Rao,
H. Iwai.
Analysis of Threshold Voltage Variations of FinFETs Relating to Short Channel Effects,
214th ECS Meeting (PRiME 2008),
Oct. 2008.
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Y. Kobayashi,
K. Tsutsui,
K. Kakushima,
P. Ahmet,
V. R. Rao,
H. Iwai.
Analysis of Threshold Voltage Variations of FinFETs : Separation of Short Channel Effects and Space Charge Effects,
Int. Conf. on Solid State Devices and Materials (SSDM2008),
Sept. 2008.
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K. Tsutsui,
M. Watanabe,
Y. Nakagawa,
T. Matsuda,
Y. Yoshida,
E. Ikenaga,
K. Kakushima,
P. Ahmet,
H. Nohira,
T. Maruizumi,
A. Ogura,
T. Hattori,
H. Iwai.
New Analysis of Heavily Doped Boron and Arsenic in Shallow Junctions by X-Ray Photoelectron Spectroscopy,
the 38th European Solid-State Device Research Conference (ESSDERC2008),
Sept. 2008.
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K. Kakushima,
K. Tachi,
M. Adachi,
K. Okamoto,
S. Sato,
J. Song,
T. Kawanago,
P. Ahmet,
K. Tsutsui,
N. Sugii,
T. Hattori,
H. Iwai.
Advantage of La2O3 Gate Dielectric Over HfO2 for Direct Contact and Mobility Improvment,
the 38th European Solid-State Device Research Conference (ESSDERC2008),
Sept. 2008.
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K. Tsutsui,
T. Shiozawa,
K. Nagahiro,
Y. Ohishi,
K. Kakushima,
P. Ahmet,
N. Urushihara,
M. Suzuki,
H. Iwai.
Effects of B or Al Interface Layers on Thermal Stability of Ni Silicide on Si,
213th ECS Meeting,
May 2008.
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K. Kakushima,
K. Okamoto,
M. Adachi,
K. Tachi,
S. Sato,
T. Kawanago,
J. Song,
P. Ahmet,
N. Sugii,
K. Tsutsui,
T. Hattori,
H. Iwai.
Impact of Thin La2O3 Insertion for HfO2 MOSFET,
213th ECS Meeting,
May 2008.
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Y. Kobayashi,
K. Tsutsui,
K. Kakushima,
V. Hariharan,
V. R. Rao,
P. Ahmet,
H. Iwai.
Parasitic Effects Depending on Shape of Spacer Region on FinFETs,
211th ECS Meeting,
May 2007.
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K. Tachi,
H. Iwai,
T. Hattori,
N. Sugii,
K. Tsutsui,
P. Ahemt,
K. Kakushima.
Effect of Oxygen for Ultra-Thin La2O3 Film Deposition,
2006 Joint International Meeting of ECS,
Oct. 2006.
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Y. Shiino,
K. Kakushima,
P. Ahmet,
K. Tsutsui,
N. Sugii,
T. Hattori,
H. Iwai.
La2O3 Gate Dielectric Thin Film with Sc2O3 Buffer Layer for High Temperature Annealing,
2006 Joint International Meeting of ECS,
Oct. 2006.
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H. Sauddin,
Y. Sasaki,
H. Ito,
B. Mizuno,
P. Ahmet,
K. Kakushima,
N. Sugii,
K. Tsutsui,
H. Iwai.
Leakage Current Characteristics of Ultra-Shallow Junctions formed by B2H6 Plasma Doping,
2006 Joint International Meeting of ECS,
Oct. 2006.
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H. Nohira,
T. Matsuda,
K. Tachi,
Y. Shiino,
J. Song,
Y. Kuroki,
J. Ng,
P. Ahmet,
K. Kakushima,
K. Tsutsui,
E. Ikenaga,
K. Kobayashi,
H. Iwai,
T. Hattori.
Effect of Deposition Temperature on Thermal Stability of Lanthanum Oxide/Si Interfacial Transition Layer,
2006 Joint International Meeting of ECS,
Oct. 2006.
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Y. Sasaki,
H. Ito,
K. Okashita,
H. Tamura,
C. G. Jin,
B. Mizuno,
T. Okumura,
I. Aiba,
Y. Fukagawa,
H. Sauddin,
K. Tsutsui,
H. Iwai.
Production-worthy USJ formation by self-regulatory plasma doping method,
IIT2006,
2006.
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Y. Kim,
A. Kuriyama,
I. Ueda,
S. Ohmi,
K. Tsutsui,
H. Iwai.
Electrical Characteristics of High-k La2O3 Thin Film Deposited by E-Beam Evaporation Method,
204th ECS symposium,
Oct. 2003.
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Y. Sasaki,
B. Mizuno,
S. Akama,
R. Higaki,
K. Tsutsui,
S. Ohmi,
H. Iwai.
Helicon Wave Plasma Doping System,
3rd International Workshop on Junction Technology (IWJT2002),
Dec. 2002.
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Y. Sasaki,
B. Mizuno,
S. Akama,
R. Higaki,
K. Tsutsui,
S. Ohmi,
H. Iwai.
Gas Phase Doping at Room Temperature,
3rd International Workshop on Junction Technology (IWJT2002),
Dec. 2002.
国際会議発表 (査読なし・不明)
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K. Terayama,
A. Nakajima,
S. Nishizawa,
H. Ohasi,
K. Kakushima,
H. Wakabayashi,
K. Tsutsui,
H. Iwai.
Calculation of ultimate on-resistance in GaN lateral HFETs using device simulation,
The Workshop on Future Trend of Nanoelectronics: WIMNACT 39,
Feb. 2014.
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Y. Ito,
H. Hori,
K. Tsutsui,
K. Kakushima,
H. Wakabayashi,
Y.Kataoka,
A.Nishiyama,
N. Sugii,
K. Natori,
H. Iwai.
Proposal of junction formation process for solar cells made of silicon microstructures,
The Workshop on Future Trend of Nanoelectronics: WIMNACT 39,
Feb. 2014.
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M. Kamiya,
Y. Takei,
W. Saito,
K. Kakushima,
H. Wakabayashi,
Y. Kataoka,
K. Tsutsui,
H. Iwai.
Evaluation of 2DEG distribution on AlGaN/GaN HEMTs introducing uneven AlGaN layers and its possibility for low-resistive contacts formation,
The Workshop on Future Trend of Nanoelectronics: WIMNACT 39,
Feb. 2014.
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T. Kato,
T.Inamura,
A.Sasaki,
K.Aoki,
K.Kakushima,
Y.Kataoka,
A. Nishiyama,
N. Sugii,
H.Wakabayashi,
K. Tsutsui,
K. Natori,
H. Iwai.
Thickness-dependent electrical characterization of β‐FeSi2,
The Workshop on Future Trend of Nanoelectronics: WIMNACT 39,
Feb. 2014.
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Minjae Yoon,
K. Terayama,
A. Nakajima,
S. Nichizawa,
H. Ohasi,
K. Kakushima,
H. Wakabayashi,
K. Tsutsui,
H. Iwai.
Investigation into scaling law in AlGaN/GaN Fin field effect transistors by device simulation,
The Workshop on Future Trend of Nanoelectronics: WIMNACT 39,
Feb. 2014.
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M. Motoki,
K. Kakushima,
Y. Kataoka,
A. Nishiyama,
N. Sugii,
H.Wakabayashi,
K. Tsutsui,
K. Natori,
H. Iwai.
Effect of Annealing Temperature on Sheet Resistance of Ni Germanide Formed by Multi-Layered Ni and Ge Films,
The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Yokohama,
Feb. 2014.
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H. Hasegawa,
Y.Wu,
J.Song,
K. Kakushima,
Y.Kataoka,
A. Nishiyama,
N. Sugii,
H. Wakabayashi,
K. Tsutsui,
K. Natori,
H. Iwai.
Improvement of tunnel FET performance using narrow bandgap semiconductor silicide /Si hetero-structure source electrod,
The Workshop on Future Trend of Nanoelectronics: WIMNACT 39,
Feb. 2014.
-
Y. Nakamura,
K. Kakushima,
Y. Kataoka,
A. Nishiyama,
H. Wakabayashi,
N. Sugii,
K. Tsutsui,
K. Natori,
H. Iwai.
Measurement of flat-band voltage shift using multi-stacked dielectric film,
The Workshop on Future Trend of Nanoelectronics: WIMNACT,
Feb. 2014.
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M. Okamoto,
K. Kakushima,
Y. Kataoka,
A. Nishiyama,
N. Sugii,
H. Wakabayashi,
K. Tsutsui,
H. Iwai,
W. Saito.
An Ohmic contact process for AlGaN/GaN Structures using TiSi2 electrodes,
The Workshop on Future Trend of Nanoelectronics: WIMNACT 39,
Feb. 2014.
国内会議発表 (査読なし・不明)
-
Chunmeng Dou,
Kakushima,
Y. Kataoka,
A. Nishiyama,
N. Sugii,
H. Wakabayashi,
K. Tsutsui,
K. Natori,
H. Iwai.
Determination of oxide traps distribution in high-k/InGaAs MOS capacitor by capacitance-voltage measurement,
The Workshop on Future Trend of Nanoelectronics: WIMNACT 39,
Feb. 2014.
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