論文

• Yiming Lei, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Masayuki Furuhashi, Shingo Tomohisa, Satoshi Yamakawa, Kuniyuki Kakushima. Effect of Lanthanum Silicate Interface Layer on the Electrical Characteristics of 4H-SiC Metal-Oxide-Semiconductor Capacitors, Microelectronics Reliability, vol. 84, pp. 248-252, May 2018.
• Yiming Lei, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Masayuki Furuhashi, Shingo Tomohisa, Satoshi Yamakaw, Kuniyuki Kakushima. Improvement of SiO2/4H-SiC Interface properties by post-metallization annealing, Microelectronics Reliability, vol. 84, pp. 226-229, May 2018.

国際会議発表 (査読有り)

• Y. M. Lei, T. Kaneko, H. Wakabayashi, K. Tsutsui, H. Iwai, K. Kakushima, M. Furuhashi, S. Tomohisa, S. Yamakawa. Influence of Interface ALD-SiO2 Layer for Lanthanum Silicate Gate Dielectrics for 4H-SiC MOS Capacitors, 47th IEEE Semiconductor Interface Specialists Conference (SISC2016), Dec. 2016.

特許など

• 角嶋邦之, 川那子高暢, 宗清修, LEIYIMING, 古橋　壮之, 三浦　成久. 半導体装置及びその製造方法. 特許. 登録. 国立大学法人東京工業大学, 三菱電機株式会社. 2014/08/28. 特願2014-173714. 2016/04/07. 特開2016-048758. 特許第6270667号. 2018/01/12 2018.

学位論文

• A Study on Atomic Layer Deposited SiO2 for SiC Gate Dielectrics,  Exam Summary,  Doctor (Engineering),  Tokyo Institute of Technology,  2018/06/30,   
• A Study on Atomic Layer Deposited SiO2 for SiC Gate Dielectrics,  Summary,  Doctor (Engineering),  Tokyo Institute of Technology,  2018/06/30,   
• A Study on Atomic Layer Deposited SiO2 for SiC Gate Dielectrics,  Thesis,  Doctor (Engineering),  Tokyo Institute of Technology,  2018/06/30,   

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